型号 功能描述 生产厂家&企业 LOGO 操作
H7N0307LMTL-E

SiliconNChannelMOSFETHighSpeedPowerSwitching

Features •Lowon-resistance RDS(on)=4.6mΩtyp. •Lowdrivecurrent •4.5Vgatedrivedevicecanbedrivenfrom5Vsource

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

SiliconNChannelMOSFETHighSpeedPowerSwitching

SiliconNChannelMOSFETHighSpeedPowerSwitching Features •Lowon-resistance RDS(on)=4.6mΩtyp. •Lowdrivecurrent •4.5Vgatedrivedevicecanbedrivenfrom5Vsource

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

SiliconNChannelMOSFETHighSpeedPowerSwitching

Features •Lowon-resistance RDS(on)=4.6mΩtyp. •Lowdrivecurrent •4.5Vgatedrivedevicecanbedrivenfrom5Vsource

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

SiliconNChannelMOSFETHighSpeedPowerSwitching

Features •Lowon-resistance RDS(on)=4.6mΩtyp. •Lowdrivecurrent •4.5Vgatedrivedevicecanbedrivenfrom5Vsource

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

SiliconNChannelMOSFETHighSpeedPowerSwitching

文件:83.67 Kbytes Page:7 Pages

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

SiliconNChannelMOSFETHighSpeedPowerSwitching

文件:83.67 Kbytes Page:7 Pages

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

H7N0307LMTL-E产品属性

  • 类型

    描述

  • 型号

    H7N0307LMTL-E

  • 制造商

    RENESAS

  • 制造商全称

    Renesas Technology Corp

  • 功能描述

    Silicon N Channel MOS FET High Speed Power Switching

更新时间:2024-5-7 19:19:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS
21+
TO-251
10
一级代理,专注军工、汽车、医疗、工业、新能源、电力
HIT/日立
23+24
SOT263
16790
专业经营各种场效应管、三极管、IGBT、可控硅、稳压IC
HIT
23+
SOT-263
21000
专业优势供应
RENESAS
21+
TO-251
100
原装现货假一赔十
RENESAS/瑞萨
20+
TO263-3
9850
只做原装正品假一赔十为客户做到零风险!!
RENESAS/瑞萨
22+
TO263-3
9852
只做原装正品现货,或订货假一赔十!
HITACHI
TO-263
68900
原包原标签100%进口原装常备现货!
HIT/日立
22+
SOT-263
34137
只做原装进口现货
HIT/日立
SOT-263
6911
一级代理 原装正品假一罚十价格优势长期供货
RENESAS
2022
TO-263
170
原厂原装正品,价格超越代理

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