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型号	功能描述	生产厂家企业	LOGO
GT150N12T	N-Channel Enhancement Mode Power MOSFET Description The GT150N12T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters	GOFORD 谷峰半导体	GOFORD
GT15A-2024SCF	HID Lamp DII Sockets Features Engages with P32d type lamp base conforming to the IEC61-1 standard. Crimping is used as the wiring method with the cable to make assembly very easy. A bulb check function is available with some types (e.g., GT15A and B). GT15B permits shielded mounting.	HIROSEHirose Electric Company 广濑日本广濑电机株式会社	HIROSE
GT15B-3S	HID Lamp DII Sockets Features Engages with P32d type lamp base conforming to the IEC61-1 standard. Crimping is used as the wiring method with the cable to make assembly very easy. A bulb check function is available with some types (e.g., GT15A and B). GT15B permits shielded mounting.	HIROSEHirose Electric Company 广濑日本广濑电机株式会社	HIROSE
GT15B-3S-F	HID Lamp DII Sockets Features Engages with P32d type lamp base conforming to the IEC61-1 standard. Crimping is used as the wiring method with the cable to make assembly very easy. A bulb check function is available with some types (e.g., GT15A and B). GT15B permits shielded mounting.	HIROSEHirose Electric Company 广濑日本广濑电机株式会社	HIROSE
GT15B-CP	HID Lamp DII Sockets Features Engages with P32d type lamp base conforming to the IEC61-1 standard. Crimping is used as the wiring method with the cable to make assembly very easy. A bulb check function is available with some types (e.g., GT15A and B). GT15B permits shielded mounting.	HIROSEHirose Electric Company 广濑日本广濑电机株式会社	HIROSE
GT15B-SC-K	HID Lamp DII Sockets Features Engages with P32d type lamp base conforming to the IEC61-1 standard. Crimping is used as the wiring method with the cable to make assembly very easy. A bulb check function is available with some types (e.g., GT15A and B). GT15B permits shielded mounting.	HIROSEHirose Electric Company 广濑日本广濑电机株式会社	HIROSE
GT15B-SU	HID Lamp DII Sockets Features Engages with P32d type lamp base conforming to the IEC61-1 standard. Crimping is used as the wiring method with the cable to make assembly very easy. A bulb check function is available with some types (e.g., GT15A and B). GT15B permits shielded mounting.	HIROSEHirose Electric Company 广濑日本广濑电机株式会社	HIROSE
GT15G101	N CHANNEL IGBT (STROBE FLASH APPLICATIONS) Discrete IGBTs (PDF:875KB) 03/2011 : http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 * GT30G124 - Breakdown Voltage VCES(V) @Ta = 25C : 430V - IGBT Current Rating IC(A) @Ta = 25C : 200A * GT30J124 - Breakdown Voltage VCES(V) @Ta = 25C : 600V - IGBT Current Rating IC(	TOSHIBA 东芝	TOSHIBA
GT15J101	N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) Discrete IGBTs (PDF:875KB) 03/2011 : http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 * GT30G124 - Breakdown Voltage VCES(V) @Ta = 25C : 430V - IGBT Current Rating IC(A) @Ta = 25C : 200A * GT30J124 - Breakdown Voltage VCES(V) @Ta = 25C : 600V - IGBT Current Rating IC(	TOSHIBA 东芝	TOSHIBA
GT15J102	N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) Discrete IGBTs (PDF:875KB) 03/2011 : http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 * GT30G124 - Breakdown Voltage VCES(V) @Ta = 25C : 430V - IGBT Current Rating IC(A) @Ta = 25C : 200A * GT30J124 - Breakdown Voltage VCES(V) @Ta = 25C : 600V - IGBT Current Rating IC(	TOSHIBA 东芝	TOSHIBA
GT15J103	N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) Discrete IGBTs (PDF:875KB) 03/2011 : http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 * GT30G124 - Breakdown Voltage VCES(V) @Ta = 25C : 430V - IGBT Current Rating IC(A) @Ta = 25C : 200A * GT30J124 - Breakdown Voltage VCES(V) @Ta = 25C : 600V - IGBT Current Rating IC(	TOSHIBA 东芝	TOSHIBA
GT15J121	Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT High Power Switching Applications Fast Switching Applications ●　 The 4th generation ●　 Enhancement-mode ●　 Ultra Fast Switching(UFS :Operating frequency up to 150kHz(Reference) ●　 High speed :tr=0.03μ s(typ.) :tf=0.08μ s(typ.) ●　 Low switching loss :Eon=0.23mJ(typ.) :Eoff=0.18mJ(typ.	TOSHIBA 东芝	TOSHIBA
GT15J301	N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Third-generation IGBT Enhancement mode type High speed : tf = 0.30μs (Max.) (IC = 15A) Low saturation voltage : VCE (sat) = 2.7V (Max.) (IC = 15A) FRD included between emitter and collector	TOSHIBA 东芝	TOSHIBA
GT15J301	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
GT15J311	N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS ● Third-generation IGBT ● Enhancement mode type ● High speed : tf = 0.30μs (Max.) (IC = 15A) ● Low saturation voltage : VCE (sat) = 2.7V (Max.) (IC = 15A) ● FRD included between emitter and collector	TOSHIBA 东芝	TOSHIBA
GT15J311	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
GT15J321	High Power Switching Applications Fast Switching Applications High Power Switching Applications Fast Switching Applications • Fourth-generation IGBT • Fast switching (FS • Enhancement mode type • High speed: tf = 0.03 μs (typ.) • Low saturation Voltage: VCE (sat) = 1.90 V (typ.) • FRD included between emitter and collector	TOSHIBA 东芝	TOSHIBA
GT15J321	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
GT15J331	High Power Switching Applications Motor Control Applications High Power Switching Applications Motor Control Applications • Fourth-generation IGBT • Enhancement mode type • High speed: tf = 0.10 μs (typ.) • Low saturation voltage: VCE (sat) = 1.75 V (typ.) • FRD included between emitter and collector	TOSHIBA 东芝	TOSHIBA
GT15J331	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
GT15M321	TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS • Fourth-generation IGBT • FRD included between emitter and collector • Enhancement mode type • High speed : tf = 0.20 μs (TYP.) (IC = 15 A) • Low saturation voltage : VCE (sat) = 1.8V (TYP.) (IC = 15A	TOSHIBA 东芝	TOSHIBA
GT15M321	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
GT15N10	Synchronus Rectification in DC/DC and AC/DC Converters Description · Trench Power MV MOSFET technology · Low RDS(ON) · Low Gate Charge · Optimized for fast-switching applications Applications Synchronus Rectification in DC/DC and AC/DC Converters Industrial and Motor Drive applications	GOFORD 谷峰半导体	GOFORD
GT15Q101	N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) Discrete IGBTs (PDF:875KB) 03/2011 : http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 * GT30G124 - Breakdown Voltage VCES(V) @Ta = 25C : 430V - IGBT Current Rating IC(A) @Ta = 25C : 200A * GT30J124 - Breakdown Voltage VCES(V) @Ta = 25C : 600V - IGBT Current Rating IC(	TOSHIBA 东芝	TOSHIBA
GT15Q102	High Power Switching Applications Discrete IGBTs (PDF:875KB) 03/2011 : http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 * GT30G124 - Breakdown Voltage VCES(V) @Ta = 25C : 430V - IGBT Current Rating IC(A) @Ta = 25C : 200A * GT30J124 - Breakdown Voltage VCES(V) @Ta = 25C : 600V - IGBT Current Rating IC(	TOSHIBA 东芝	TOSHIBA
GT15Q102	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
GT15Q301	N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) Discrete IGBTs (PDF:875KB) 03/2011 : http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 * GT30G124 - Breakdown Voltage VCES(V) @Ta = 25C : 430V - IGBT Current Rating IC(A) @Ta = 25C : 200A * GT30J124 - Breakdown Voltage VCES(V) @Ta = 25C : 600V - IGBT Current Rating IC(	TOSHIBA 东芝	TOSHIBA
GT15Q301	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
GT15Q311	TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications • The 3rd generation • Enhancement-mode • High speed: tf = 0.32 µs (max) • Low saturation voltage: VCE (sat) = 2.7 V (max) • FRD included between emitter and collector	TOSHIBA 东芝	TOSHIBA
GT15T-2024SCF	HID Lamp DII Sockets Features Engages with P32d type lamp base conforming to the IEC61-1 standard. Crimping is used as the wiring method with the cable to make assembly very easy. A bulb check function is available with some types (e.g., GT15A and B). GT15B permits shielded mounting.	HIROSEHirose Electric Company 广濑日本广濑电机株式会社	HIROSE
GT15T-2S	HID Lamp DII Sockets Features Engages with P32d type lamp base conforming to the IEC61-1 standard. Crimping is used as the wiring method with the cable to make assembly very easy. A bulb check function is available with some types (e.g., GT15A and B). GT15B permits shielded mounting.	HIROSEHirose Electric Company 广濑日本广濑电机株式会社	HIROSE
GT15T-2S-F	HID Lamp DII Sockets Features Engages with P32d type lamp base conforming to the IEC61-1 standard. Crimping is used as the wiring method with the cable to make assembly very easy. A bulb check function is available with some types (e.g., GT15A and B). GT15B permits shielded mounting.	HIROSEHirose Electric Company 广濑日本广濑电机株式会社	HIROSE
GT150HF120T2VH-M	IGBT Half Bridge-1200V	NJSME 银茂微	NJSME
GT150L105A	继电器插座及配件	CARLOGAVAZZI 佳乐	CARLOGAVAZZI
GT150L105A	包装：散装描述：TOR LUG 150A 80-105A 继电器配件	ETC 知名厂家	ETC
GT150L130A	包装：散装描述：TOR LUG 150A 95-130A 继电器配件	ETC 知名厂家	ETC
GT150L150A	继电器插座及配件	CARLOGAVAZZI 佳乐	CARLOGAVAZZI
GT15G101	Discrete IGBTs 文件：835.68 Kbytes Page：16 Pages	TOSHIBA 东芝	TOSHIBA
GT15J101	Discrete IGBTs 文件：835.68 Kbytes Page：16 Pages	TOSHIBA 东芝	TOSHIBA
GT15J102	Discrete IGBTs 文件：835.68 Kbytes Page：16 Pages	TOSHIBA 东芝	TOSHIBA
GT15J103	Discrete IGBTs 文件：835.68 Kbytes Page：16 Pages	TOSHIBA 东芝	TOSHIBA
GT15J301	HIGH POWER SWITCHING APPLICATIONS 文件：492.96 Kbytes Page：7 Pages	TOSHIBA 东芝	TOSHIBA
GT15J301_06	HIGH POWER SWITCHING APPLICATIONS 文件：492.96 Kbytes Page：7 Pages	TOSHIBA 东芝	TOSHIBA
GT15J311	HIGH POWER SWITCHING APPLICATIONS 文件：516.36 Kbytes Page：7 Pages	TOSHIBA 东芝	TOSHIBA
GT15J311_06	HIGH POWER SWITCHING APPLICATIONS 文件：516.36 Kbytes Page：7 Pages	TOSHIBA 东芝	TOSHIBA
GT15J321_06	Silicon N Channel IGBT High Power Switching Applications 文件：195.46 Kbytes Page：7 Pages	TOSHIBA 东芝	TOSHIBA
GT15J331_06	Silicon N Channel IGBT High Power Switching Applications 文件：222.31 Kbytes Page：7 Pages	TOSHIBA 东芝	TOSHIBA
GT15J341	Discrete IGBTs Silicon N-Channel IGBT 文件：257.57 Kbytes Page：10 Pages	TOSHIBA 东芝	TOSHIBA
GT15M321	HIGH POWER SWITCHING APPLICATIONS 文件：426.52 Kbytes Page：6 Pages	TOSHIBA 东芝	TOSHIBA
GT15M321_06	HIGH POWER SWITCHING APPLICATIONS 文件：426.52 Kbytes Page：6 Pages	TOSHIBA 东芝	TOSHIBA
GT15N101	Discrete IGBTs 文件：835.68 Kbytes Page：16 Pages	TOSHIBA 东芝	TOSHIBA
GT15Q101	Discrete IGBTs 文件：835.68 Kbytes Page：16 Pages	TOSHIBA 东芝	TOSHIBA
GT15Q102	Silicon N Channel IGBT High Power Switching Applications 文件：189.56 Kbytes Page：6 Pages	TOSHIBA 东芝	TOSHIBA
GT15Q102_06	Silicon N Channel IGBT High Power Switching Applications 文件：189.56 Kbytes Page：6 Pages	TOSHIBA 东芝	TOSHIBA
GT15Q301	SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS 文件：493.5 Kbytes Page：7 Pages	TOSHIBA 东芝	TOSHIBA
GT15Q301_06	SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS 文件：493.5 Kbytes Page：7 Pages	TOSHIBA 东芝	TOSHIBA
GT15Q311	Discrete IGBTs 文件：835.68 Kbytes Page：16 Pages	TOSHIBA 东芝	TOSHIBA

GT15产品属性

类型
描述
型号
GT15
制造商
Carlo Gavazzi
功能描述
TOR LUG 150A 80-105A

GT15供应商更多...

更新时间：2025-10-19 22:59:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市得捷芯城科技有限公司	GT15J101	TOSHIBA/东芝	24+	NA/	181	优势代理渠道,原装正品,可全系列订货开增值税票	询价
齐创科技(上海,北京,青岛)有限公司	GT15J101	TOSHIBA	23+	TO-3P	5000	原装正品,假一罚十	询价
谛辉(北京/上海/青岛 )电子科技有限公司	GT15J101	TOSHIBA	25+	管3P	18000	原厂直接发货进口原装	询价
艾睿（深圳）半导体有限公司	GT15J101	TOSHIBA/东芝	2447	TO-3P	100500	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价
中天科工半导体（深圳）有限公司	GT15FB120A1H	SILVERM	专业模块	MODULE	8513	模块原装主营-可开原型号增税票	询价
深圳市威雅利发展有限公司	GT15J101	TOS	08+	TO-3P	491	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市河锋鑫科技有限公司	GT15J101	TOSHIBA/东芝	TO-247	22+	6000	十年配单,只做原装	询价
深圳市卓越微芯电子有限公司	GT15J101	东芝	25+	TO3P	67	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市昊创电子有限公司	GT15J101	TOSHIBA/东芝		TO-3P	1470	绝对优势库存	询价
浙江永芯科技有限公司	GT15FF120B3H	SILVERMICRO	23+	标准封装	5000	原厂授权一级代理 IGBT模块可控硅晶闸管熔断器质保	询价

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GT17HN-4DP-2DS(C)
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GT24C1024-2GLI，全新原装.当天发货或门市自取，如需了解更多产品信息联系我们.零七五五.八二七三二二九一企鹅:一一七四零五二三五三，V:八七六八零五五八.
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GT15产品属性

GT15供应商更多...

GT15芯片相关品牌

GT15规格书下载地址

GT15参数引脚图相关

GT15数据表相关新闻

GT17HN-4DP-2DS(C)

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GST5009MLF

GSP-812

GSOT36C-GS08vishayESDSuppressorTVS±30KV原装正品大量现货

DdatasheetPDF页码索引