型号 功能描述 生产厂家 企业 LOGO 操作

N-Channel Enhancement Mode Power MOSFET

Description The GT150N12T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

GOFORD

谷峰半导体

HID Lamp DII Sockets

Features Engages with P32d type lamp base conforming to the IEC61-1 standard. Crimping is used as the wiring method with the cable to make assembly very easy. A bulb check function is available with some types (e.g., GT15A and B). GT15B permits shielded mounting.

HIROSEHirose Electric Company

广濑日本广濑电机株式会社

HID Lamp DII Sockets

Features Engages with P32d type lamp base conforming to the IEC61-1 standard. Crimping is used as the wiring method with the cable to make assembly very easy. A bulb check function is available with some types (e.g., GT15A and B). GT15B permits shielded mounting.

HIROSEHirose Electric Company

广濑日本广濑电机株式会社

HID Lamp DII Sockets

Features Engages with P32d type lamp base conforming to the IEC61-1 standard. Crimping is used as the wiring method with the cable to make assembly very easy. A bulb check function is available with some types (e.g., GT15A and B). GT15B permits shielded mounting.

HIROSEHirose Electric Company

广濑日本广濑电机株式会社

HID Lamp DII Sockets

Features Engages with P32d type lamp base conforming to the IEC61-1 standard. Crimping is used as the wiring method with the cable to make assembly very easy. A bulb check function is available with some types (e.g., GT15A and B). GT15B permits shielded mounting.

HIROSEHirose Electric Company

广濑日本广濑电机株式会社

HID Lamp DII Sockets

Features Engages with P32d type lamp base conforming to the IEC61-1 standard. Crimping is used as the wiring method with the cable to make assembly very easy. A bulb check function is available with some types (e.g., GT15A and B). GT15B permits shielded mounting.

HIROSEHirose Electric Company

广濑日本广濑电机株式会社

HID Lamp DII Sockets

Features Engages with P32d type lamp base conforming to the IEC61-1 standard. Crimping is used as the wiring method with the cable to make assembly very easy. A bulb check function is available with some types (e.g., GT15A and B). GT15B permits shielded mounting.

HIROSEHirose Electric Company

广濑日本广濑电机株式会社

N CHANNEL IGBT (STROBE FLASH APPLICATIONS)

Discrete IGBTs (PDF:875KB) 03/2011 : http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 * GT30G124 - Breakdown Voltage VCES(V) @Ta = 25C : 430V - IGBT Current Rating IC(A) @Ta = 25C : 200A * GT30J124 - Breakdown Voltage VCES(V) @Ta = 25C : 600V - IGBT Current Rating IC(

TOSHIBA

东芝

N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)

Discrete IGBTs (PDF:875KB) 03/2011 : http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 * GT30G124 - Breakdown Voltage VCES(V) @Ta = 25C : 430V - IGBT Current Rating IC(A) @Ta = 25C : 200A * GT30J124 - Breakdown Voltage VCES(V) @Ta = 25C : 600V - IGBT Current Rating IC(

TOSHIBA

东芝

N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)

Discrete IGBTs (PDF:875KB) 03/2011 : http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 * GT30G124 - Breakdown Voltage VCES(V) @Ta = 25C : 430V - IGBT Current Rating IC(A) @Ta = 25C : 200A * GT30J124 - Breakdown Voltage VCES(V) @Ta = 25C : 600V - IGBT Current Rating IC(

TOSHIBA

东芝

N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)

Discrete IGBTs (PDF:875KB) 03/2011 : http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 * GT30G124 - Breakdown Voltage VCES(V) @Ta = 25C : 430V - IGBT Current Rating IC(A) @Ta = 25C : 200A * GT30J124 - Breakdown Voltage VCES(V) @Ta = 25C : 600V - IGBT Current Rating IC(

TOSHIBA

东芝

Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT

High Power Switching Applications Fast Switching Applications ●  The 4th generation ●  Enhancement-mode ●  Ultra Fast Switching(UFS :Operating frequency up to 150kHz(Reference) ●  High speed :tr=0.03μ s(typ.) :tf=0.08μ s(typ.) ●  Low switching loss :Eon=0.23mJ(typ.) :Eoff=0.18mJ(typ.

TOSHIBA

东芝

N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)

HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Third-generation IGBT Enhancement mode type High speed : tf = 0.30μs (Max.) (IC = 15A) Low saturation voltage : VCE (sat) = 2.7V (Max.) (IC = 15A) FRD included between emitter and collector

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)

HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS ● Third-generation IGBT ● Enhancement mode type ● High speed : tf = 0.30μs (Max.) (IC = 15A) ● Low saturation voltage : VCE (sat) = 2.7V (Max.) (IC = 15A) ● FRD included between emitter and collector

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

High Power Switching Applications Fast Switching Applications

High Power Switching Applications Fast Switching Applications • Fourth-generation IGBT • Fast switching (FS • Enhancement mode type • High speed: tf = 0.03 μs (typ.) • Low saturation Voltage: VCE (sat) = 1.90 V (typ.) • FRD included between emitter and collector

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

High Power Switching Applications Motor Control Applications

High Power Switching Applications Motor Control Applications • Fourth-generation IGBT • Enhancement mode type • High speed: tf = 0.10 μs (typ.) • Low saturation voltage: VCE (sat) = 1.75 V (typ.) • FRD included between emitter and collector

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT

HIGH POWER SWITCHING APPLICATIONS • Fourth-generation IGBT • FRD included between emitter and collector • Enhancement mode type • High speed : tf = 0.20 μs (TYP.) (IC = 15 A) • Low saturation voltage : VCE (sat) = 1.8V (TYP.) (IC = 15A

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

Synchronus Rectification in DC/DC and AC/DC Converters

Description · Trench Power MV MOSFET technology · Low RDS(ON) · Low Gate Charge · Optimized for fast-switching applications Applications Synchronus Rectification in DC/DC and AC/DC Converters Industrial and Motor Drive applications

GOFORD

谷峰半导体

N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)

Discrete IGBTs (PDF:875KB) 03/2011 : http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 * GT30G124 - Breakdown Voltage VCES(V) @Ta = 25C : 430V - IGBT Current Rating IC(A) @Ta = 25C : 200A * GT30J124 - Breakdown Voltage VCES(V) @Ta = 25C : 600V - IGBT Current Rating IC(

TOSHIBA

东芝

High Power Switching Applications

Discrete IGBTs (PDF:875KB) 03/2011 : http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 * GT30G124 - Breakdown Voltage VCES(V) @Ta = 25C : 430V - IGBT Current Rating IC(A) @Ta = 25C : 200A * GT30J124 - Breakdown Voltage VCES(V) @Ta = 25C : 600V - IGBT Current Rating IC(

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)

Discrete IGBTs (PDF:875KB) 03/2011 : http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 * GT30G124 - Breakdown Voltage VCES(V) @Ta = 25C : 430V - IGBT Current Rating IC(A) @Ta = 25C : 200A * GT30J124 - Breakdown Voltage VCES(V) @Ta = 25C : 600V - IGBT Current Rating IC(

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT

High Power Switching Applications Motor Control Applications • The 3rd generation • Enhancement-mode • High speed: tf = 0.32 µs (max) • Low saturation voltage: VCE (sat) = 2.7 V (max) • FRD included between emitter and collector

TOSHIBA

东芝

HID Lamp DII Sockets

Features Engages with P32d type lamp base conforming to the IEC61-1 standard. Crimping is used as the wiring method with the cable to make assembly very easy. A bulb check function is available with some types (e.g., GT15A and B). GT15B permits shielded mounting.

HIROSEHirose Electric Company

广濑日本广濑电机株式会社

HID Lamp DII Sockets

Features Engages with P32d type lamp base conforming to the IEC61-1 standard. Crimping is used as the wiring method with the cable to make assembly very easy. A bulb check function is available with some types (e.g., GT15A and B). GT15B permits shielded mounting.

HIROSEHirose Electric Company

广濑日本广濑电机株式会社

HID Lamp DII Sockets

Features Engages with P32d type lamp base conforming to the IEC61-1 standard. Crimping is used as the wiring method with the cable to make assembly very easy. A bulb check function is available with some types (e.g., GT15A and B). GT15B permits shielded mounting.

HIROSEHirose Electric Company

广濑日本广濑电机株式会社

IGBT Chopper-1200V

NJSME

银茂微

Automotive Modulese-Full Bridge-1200V

NJSME

银茂微

IGBT Half Bridge-1200V

NJSME

银茂微

包装:散装 描述:TOR LUG 150A 80-105A 继电器 配件

ETC

知名厂家

包装:散装 描述:TOR LUG 150A 95-130A 继电器 配件

ETC

知名厂家

Discrete IGBTs

文件:835.68 Kbytes Page:16 Pages

TOSHIBA

东芝

Discrete IGBTs

文件:835.68 Kbytes Page:16 Pages

TOSHIBA

东芝

Discrete IGBTs

文件:835.68 Kbytes Page:16 Pages

TOSHIBA

东芝

Discrete IGBTs

文件:835.68 Kbytes Page:16 Pages

TOSHIBA

东芝

HIGH POWER SWITCHING APPLICATIONS

文件:492.96 Kbytes Page:7 Pages

TOSHIBA

东芝

HIGH POWER SWITCHING APPLICATIONS

文件:492.96 Kbytes Page:7 Pages

TOSHIBA

东芝

HIGH POWER SWITCHING APPLICATIONS

文件:516.36 Kbytes Page:7 Pages

TOSHIBA

东芝

HIGH POWER SWITCHING APPLICATIONS

文件:516.36 Kbytes Page:7 Pages

TOSHIBA

东芝

Silicon N Channel IGBT High Power Switching Applications

文件:195.46 Kbytes Page:7 Pages

TOSHIBA

东芝

Silicon N Channel IGBT High Power Switching Applications

文件:222.31 Kbytes Page:7 Pages

TOSHIBA

东芝

Discrete IGBTs Silicon N-Channel IGBT

文件:257.57 Kbytes Page:10 Pages

TOSHIBA

东芝

HIGH POWER SWITCHING APPLICATIONS

文件:426.52 Kbytes Page:6 Pages

TOSHIBA

东芝

HIGH POWER SWITCHING APPLICATIONS

文件:426.52 Kbytes Page:6 Pages

TOSHIBA

东芝

Discrete IGBTs

文件:835.68 Kbytes Page:16 Pages

TOSHIBA

东芝

Discrete IGBTs

文件:835.68 Kbytes Page:16 Pages

TOSHIBA

东芝

Silicon N Channel IGBT High Power Switching Applications

文件:189.56 Kbytes Page:6 Pages

TOSHIBA

东芝

Silicon N Channel IGBT High Power Switching Applications

文件:189.56 Kbytes Page:6 Pages

TOSHIBA

东芝

SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS

文件:493.5 Kbytes Page:7 Pages

TOSHIBA

东芝

SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS

文件:493.5 Kbytes Page:7 Pages

TOSHIBA

东芝

Discrete IGBTs

文件:835.68 Kbytes Page:16 Pages

TOSHIBA

东芝

GT15产品属性

  • 类型

    描述

  • 型号

    GT15

  • 制造商

    Carlo Gavazzi

  • 功能描述

    TOR LUG 150A 80-105A

更新时间:2025-12-25 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TOSHIBA/东芝
24+
NA/
181
优势代理渠道,原装正品,可全系列订货开增值税票
TOSHIBA
24+
TO-220F
5500
只做原装正品现货 欢迎来电查询15919825718
TOS
22+
TO-3P
20000
公司只做原装 品质保障
东芝
25+
TO3P
67
百分百原装正品 真实公司现货库存 本公司只做原装 可
TOS
25+
TO-3P
30000
代理全新原装现货,价格优势
SILVERM
专业模块
MODULE
8513
模块原装主营-可开原型号增税票
银茂微
23+
MODULE
4500
专营国产功率器件
TOS
23+
TO-3P
500
专做原装正品,假一罚百!
TOSHIBA
25+
管3P
18000
原厂直接发货进口原装
TOSHIBA/东芝
23+
TO-247
169085
原厂授权一级代理,专业海外优势订货,价格优势、品种

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