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位置：首页 > IC中文资料第3550页 > GT15

型号 功能描述 生产厂家&企业 LOGO 操作
GT15A-2024SCF

HID Lamp DII Sockets

Features EngageswithP32dtypelampbaseconformingtotheIEC61-1standard. Crimpingisusedasthewiringmethodwiththecabletomakeassemblyveryeasy. Abulbcheckfunctionisavailablewithsometypes(e.g.,GT15AandB). GT15Bpermitsshieldedmounting.

HIROSEHirose Electric Company

广濑日本广濑电机株式会社

HIROSE
GT15B-3S

HID Lamp DII Sockets

Features EngageswithP32dtypelampbaseconformingtotheIEC61-1standard. Crimpingisusedasthewiringmethodwiththecabletomakeassemblyveryeasy. Abulbcheckfunctionisavailablewithsometypes(e.g.,GT15AandB). GT15Bpermitsshieldedmounting.

HIROSEHirose Electric Company

广濑日本广濑电机株式会社

HIROSE
GT15B-3S-F

HID Lamp DII Sockets

Features EngageswithP32dtypelampbaseconformingtotheIEC61-1standard. Crimpingisusedasthewiringmethodwiththecabletomakeassemblyveryeasy. Abulbcheckfunctionisavailablewithsometypes(e.g.,GT15AandB). GT15Bpermitsshieldedmounting.

HIROSEHirose Electric Company

广濑日本广濑电机株式会社

HIROSE
GT15B-CP

HID Lamp DII Sockets

Features EngageswithP32dtypelampbaseconformingtotheIEC61-1standard. Crimpingisusedasthewiringmethodwiththecabletomakeassemblyveryeasy. Abulbcheckfunctionisavailablewithsometypes(e.g.,GT15AandB). GT15Bpermitsshieldedmounting.

HIROSEHirose Electric Company

广濑日本广濑电机株式会社

HIROSE
GT15B-SC-K

HID Lamp DII Sockets

Features EngageswithP32dtypelampbaseconformingtotheIEC61-1standard. Crimpingisusedasthewiringmethodwiththecabletomakeassemblyveryeasy. Abulbcheckfunctionisavailablewithsometypes(e.g.,GT15AandB). GT15Bpermitsshieldedmounting.

HIROSEHirose Electric Company

广濑日本广濑电机株式会社

HIROSE
GT15B-SU

HID Lamp DII Sockets

Features EngageswithP32dtypelampbaseconformingtotheIEC61-1standard. Crimpingisusedasthewiringmethodwiththecabletomakeassemblyveryeasy. Abulbcheckfunctionisavailablewithsometypes(e.g.,GT15AandB). GT15Bpermitsshieldedmounting.

HIROSEHirose Electric Company

广濑日本广濑电机株式会社

HIROSE
GT15G101

N CHANNEL IGBT (STROBE FLASH APPLICATIONS)

DiscreteIGBTs(PDF:875KB)03/2011: http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 *GT30G124 -BreakdownVoltageVCES(V)@Ta=25C:430V -IGBTCurrentRatingIC(A)@Ta=25C:200A *GT30J124 -BreakdownVoltageVCES(V)@Ta=25C:600V -IGBTCurrentRatingIC(

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
GT15J101

N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)

DiscreteIGBTs(PDF:875KB)03/2011: http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 *GT30G124 -BreakdownVoltageVCES(V)@Ta=25C:430V -IGBTCurrentRatingIC(A)@Ta=25C:200A *GT30J124 -BreakdownVoltageVCES(V)@Ta=25C:600V -IGBTCurrentRatingIC(

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
GT15J102

N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)

DiscreteIGBTs(PDF:875KB)03/2011: http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 *GT30G124 -BreakdownVoltageVCES(V)@Ta=25C:430V -IGBTCurrentRatingIC(A)@Ta=25C:200A *GT30J124 -BreakdownVoltageVCES(V)@Ta=25C:600V -IGBTCurrentRatingIC(

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
GT15J103

N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)

DiscreteIGBTs(PDF:875KB)03/2011: http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 *GT30G124 -BreakdownVoltageVCES(V)@Ta=25C:430V -IGBTCurrentRatingIC(A)@Ta=25C:200A *GT30J124 -BreakdownVoltageVCES(V)@Ta=25C:600V -IGBTCurrentRatingIC(

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
GT15J121

Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT

HighPowerSwitchingApplications FastSwitchingApplications ●The4thgeneration ●Enhancement-mode ●UltraFastSwitching(UFS:Operatingfrequencyupto150kHz(Reference) ●Highspeed:tr=0.03μs(typ.):tf=0.08μs(typ.) ●Lowswitchingloss:Eon=0.23mJ(typ.):Eoff=0.18mJ(typ.

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
GT15J301

N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)

HIGHPOWERSWITCHINGAPPLICATIONS MOTORCONTROLAPPLICATIONS Third-generationIGBT Enhancementmodetype Highspeed:tf=0.30μs(Max.)(IC=15A) Lowsaturationvoltage:VCE(sat)=2.7V(Max.)(IC=15A) FRDincludedbetweenemitterandcollector

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
GT15J301

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
GT15J311

N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)

HIGHPOWERSWITCHINGAPPLICATIONS MOTORCONTROLAPPLICATIONS ●Third-generationIGBT ●Enhancementmodetype ●Highspeed:tf=0.30μs(Max.)(IC=15A) ●Lowsaturationvoltage:VCE(sat)=2.7V(Max.)(IC=15A) ●FRDincludedbetweenemitterandcollector

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
GT15J311

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
GT15J321

High Power Switching Applications Fast Switching Applications

HighPowerSwitchingApplications FastSwitchingApplications •Fourth-generationIGBT •Fastswitching(FS •Enhancementmodetype •Highspeed:tf=0.03μs(typ.) •LowsaturationVoltage:VCE(sat)=1.90V(typ.) •FRDincludedbetweenemitterandcollector

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
GT15J321

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
GT15J331

High Power Switching Applications Motor Control Applications

HighPowerSwitchingApplications MotorControlApplications •Fourth-generationIGBT •Enhancementmodetype •Highspeed:tf=0.10μs(typ.) •Lowsaturationvoltage:VCE(sat)=1.75V(typ.) •FRDincludedbetweenemitterandcollector

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
GT15J331

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
GT15M321

TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT

HIGHPOWERSWITCHINGAPPLICATIONS •Fourth-generationIGBT •FRDincludedbetweenemitterandcollector •Enhancementmodetype •Highspeed:tf=0.20μs(TYP.)(IC=15A) •Lowsaturationvoltage:VCE(sat)=1.8V(TYP.) (IC=15A

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
GT15M321

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
GT15Q101

N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)

DiscreteIGBTs(PDF:875KB)03/2011: http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 *GT30G124 -BreakdownVoltageVCES(V)@Ta=25C:430V -IGBTCurrentRatingIC(A)@Ta=25C:200A *GT30J124 -BreakdownVoltageVCES(V)@Ta=25C:600V -IGBTCurrentRatingIC(

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
GT15Q102

High Power Switching Applications

DiscreteIGBTs(PDF:875KB)03/2011: http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 *GT30G124 -BreakdownVoltageVCES(V)@Ta=25C:430V -IGBTCurrentRatingIC(A)@Ta=25C:200A *GT30J124 -BreakdownVoltageVCES(V)@Ta=25C:600V -IGBTCurrentRatingIC(

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
GT15Q102

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
GT15Q301

N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)

DiscreteIGBTs(PDF:875KB)03/2011: http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 *GT30G124 -BreakdownVoltageVCES(V)@Ta=25C:430V -IGBTCurrentRatingIC(A)@Ta=25C:200A *GT30J124 -BreakdownVoltageVCES(V)@Ta=25C:600V -IGBTCurrentRatingIC(

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
GT15Q301

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
GT15Q311

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT

HighPowerSwitchingApplications MotorControlApplications •The3rdgeneration •Enhancement-mode •Highspeed:tf=0.32µs(max) •Lowsaturationvoltage:VCE(sat)=2.7V(max) •FRDincludedbetweenemitterandcollector

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
GT15T-2024SCF

HID Lamp DII Sockets

Features EngageswithP32dtypelampbaseconformingtotheIEC61-1standard. Crimpingisusedasthewiringmethodwiththecabletomakeassemblyveryeasy. Abulbcheckfunctionisavailablewithsometypes(e.g.,GT15AandB). GT15Bpermitsshieldedmounting.

HIROSEHirose Electric Company

广濑日本广濑电机株式会社

HIROSE
GT15T-2S

HID Lamp DII Sockets

Features EngageswithP32dtypelampbaseconformingtotheIEC61-1standard. Crimpingisusedasthewiringmethodwiththecabletomakeassemblyveryeasy. Abulbcheckfunctionisavailablewithsometypes(e.g.,GT15AandB). GT15Bpermitsshieldedmounting.

HIROSEHirose Electric Company

广濑日本广濑电机株式会社

HIROSE
GT15T-2S-F

HID Lamp DII Sockets

Features EngageswithP32dtypelampbaseconformingtotheIEC61-1standard. Crimpingisusedasthewiringmethodwiththecabletomakeassemblyveryeasy. Abulbcheckfunctionisavailablewithsometypes(e.g.,GT15AandB). GT15Bpermitsshieldedmounting.

HIROSEHirose Electric Company

广濑日本广濑电机株式会社

HIROSE
GT150L105A

包装：散装 描述：TOR LUG 150A 80-105A 继电器 配件

Carlo Gavazzi Inc.

Carlo Gavazzi Inc.

Carlo Gavazzi Inc.
GT150L130A

包装：散装 描述：TOR LUG 150A 95-130A 继电器 配件

Carlo Gavazzi Inc.

Carlo Gavazzi Inc.

Carlo Gavazzi Inc.
GT15G101

Discrete IGBTs

文件：835.68 Kbytes Page：16 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
GT15J101

Discrete IGBTs

文件：835.68 Kbytes Page：16 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
GT15J102

Discrete IGBTs

文件：835.68 Kbytes Page：16 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
GT15J103

Discrete IGBTs

文件：835.68 Kbytes Page：16 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
GT15J301

HIGH POWER SWITCHING APPLICATIONS

文件：492.96 Kbytes Page：7 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
GT15J301_06

HIGH POWER SWITCHING APPLICATIONS

文件：492.96 Kbytes Page：7 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
GT15J311

HIGH POWER SWITCHING APPLICATIONS

文件：516.36 Kbytes Page：7 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
GT15J311_06

HIGH POWER SWITCHING APPLICATIONS

文件：516.36 Kbytes Page：7 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
GT15J321_06

Silicon N Channel IGBT High Power Switching Applications

文件：195.46 Kbytes Page：7 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
GT15J331_06

Silicon N Channel IGBT High Power Switching Applications

文件：222.31 Kbytes Page：7 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
GT15J341

Discrete IGBTs Silicon N-Channel IGBT

文件：257.57 Kbytes Page：10 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
GT15M321

HIGH POWER SWITCHING APPLICATIONS

文件：426.52 Kbytes Page：6 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
GT15M321_06

HIGH POWER SWITCHING APPLICATIONS

文件：426.52 Kbytes Page：6 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
GT15N101

Discrete IGBTs

文件：835.68 Kbytes Page：16 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
GT15Q101

Discrete IGBTs

文件：835.68 Kbytes Page：16 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
GT15Q102

Silicon N Channel IGBT High Power Switching Applications

文件：189.56 Kbytes Page：6 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
GT15Q102_06

Silicon N Channel IGBT High Power Switching Applications

文件：189.56 Kbytes Page：6 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
GT15Q301

SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS

文件：493.5 Kbytes Page：7 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
GT15Q301_06

SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS

文件：493.5 Kbytes Page：7 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
GT15Q311

Discrete IGBTs

文件：835.68 Kbytes Page：16 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

GT15产品属性

  • 类型

    描述

  • 型号

    GT15

  • 制造商

    Carlo Gavazzi

  • 功能描述

    TOR LUG 150A 80-105A

GT15供应商更多...

更新时间：2024-6-5 21:36:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
中天科工半导体（深圳）有限公司
GT15FB120A1H
SILVERM
专业模块
MODULE
8513
模块原装主营-可开原型号增税票
询价
深圳市博浩通科技有限公司
GT15J101
TOSHIBA
23+
TO-247
3000
全新原装
询价
深圳市赛恒电子科技有限公司
GT15J101
TOSHIBA/东芝
21+
TO-3P
6688
十年老店,原装正品
询价
瀚佳科技(深圳)有限公司
GT15FB120A1H
SILVERM
16+
MODULES
2100
公司大量全新现货 随时可以发货
询价
深圳兆威电子有限公司
GT15J101
TOSHIBA/东芝
23+
TO-3P
90000
只做原厂渠道价格优势可提供技术支持
询价
深圳市星辰微电科技有限公司
GT15IP120A7H
银茂微
23+
MODULE
4500
专营国产功率器件
询价
深圳市拓亿芯电子有限公司
GT15J101
TOS
23+
TO-3P
30000
代理全新原装现货,价格优势
询价
深圳市富芯乐电子科技有限公司
GT15G101
TOSHIBA
22+
TO-220F
5500
绝对全新原装现货
询价
深圳市振宏微科技有限公司
GT15J101
TOS
23+
TO-3P
500
专做原装正品,假一罚百!
询价
深圳市卓越微芯电子有限公司
GT15J101
东芝
2020+
TO3P
67
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价

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