ISOLATED, PROPORTIONAL DC TO HV DC CONVERTERS

PRODUCT DESCRIPTION The GP Series is a line of miniature DC to HV DC converters providing 100V to 6kV, positive or negative in a compact PC mount package. This line features low power consumption, making it ideal for portable, battery powered applications. The isolated output is proportional to t

封装/外壳：4-DIP 模块 包装：管件 描述：DC DC CONVERTER 4000V 1W 电源 - 板安装 直流转换器

封装/外壳：4-DIP 模块 包装：管件 描述：DC DC CONVERTER 4000V 1W 电源 - 板安装 直流转换器

Getriebe- & Motor – Potentiometer

High Voltage DC-DC

4 AMP HIGH RELIABILITY SOFT GLASS PASSIVATED SILICON DIODES

FEATURES • PROPRIETARY SOFT GLASS® JUNCTION PASSIVATION FOR SUPERIOR RELIABILITY AND PERFORMANCE • VOID FREE VACUUM DIE SOLDERING FOR MAXIMUM MECHANICAL STRENGTH AND HEAT DISSIPATION (Solder Voids: Typical

Dual Switch IGBT Module Advance Information

The Powerline range of high power modules includes half bridge, dual, chopper and single switch configurations covering voltages from 600V to 3300V and currents up to 2400A. FEATURES ■ High Thermal Cycling Capability ■ 400A Per Switch ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN S

Powerline N-Channel Dual Switch IGBT Module

The GP400DDS12 is a dual switch 1200V, robust n channel enhancement mode insulated gate bipolar transistor (IGBT) module. Designed for low power loss, the module is suitable for a variety of high voltage applications in motor drives and power conversion. The high impedance gate simplifies gate dri

Dual Switch IGBT Module Preliminary Information

The Powerline range of high power modules includes dual and single switch configurations covering voltages from 600V to 3300V and currents up to 4800A. The GP400DDS18 is a dual switch 1800V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse b

Single Switch IGBT Module

The Powerline range of high power modules includes half bridge and single switch configurations covering voltages from 600V to 3300V and currents up to 4800A. The GP400LSS12 is a single switch 1200V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide

Single Switch IGBT Module

The Powerline range of high power modules includes half bridge, dual and single switch configurations covering voltages from 600V to 3300V and currents up to 4800A. The GP400LSS18 is a single switch 1800V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a

4 AMP HIGH RELIABILITY SOFT GLASS PASSIVATED SILICON DIODES

FEATURES • PROPRIETARY SOFT GLASS® JUNCTION PASSIVATION FOR SUPERIOR RELIABILITY AND PERFORMANCE • VOID FREE VACUUM DIE SOLDERING FOR MAXIMUM MECHANICAL STRENGTH AND HEAT DISSIPATION (Solder Voids: Typical

Hi-Reliability Dual Switch Low VCE(SAT) IGBT Module Advance Information

The Powerline range of high power modules includes dual and single switch configurations covering voltages from 1200V to 3300V and currents up to 4800A. The GP401DDM18 is a dual switch 1800V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. Designed with low VCE(SAT)

Low VCE(SAT) Dual Switch IGBT Module Preliminary Information

The Powerline range of high power modules includes dual and single switch configurations covering voltages from 600V to 3300V and currents up to 4800A. The GP401DDS18 is a dual switch 1800V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. Designed with low VCE(SAT)

Powerline N-Channel Single Switch Low Loss IGBT Module Preliminary Information

The GP401LSS18 is a single switch 1800V, robust n channel enhancement mode insulated gate bipolar transistor (IGBT) module. Designed for low power loss, the module is suitable for a variety of high voltage applications in motor drives and power conversion. The high impedance gate simplifies gate d

4 AMP HIGH RELIABILITY SOFT GLASS PASSIVATED SILICON DIODES

FEATURES • PROPRIETARY SOFT GLASS® JUNCTION PASSIVATION FOR SUPERIOR RELIABILITY AND PERFORMANCE • VOID FREE VACUUM DIE SOLDERING FOR MAXIMUM MECHANICAL STRENGTH AND HEAT DISSIPATION (Solder Voids: Typical

GPS Receiver Baseband Processor

Description The GP4020 is a complete digital baseband processor for a Global Positioning System (GPS) receiver. It combines the 12-channel correlator function of the GP2021 with an advanced ARM7TDMI (Thumb) microprocessor to achieve a higher level of integration, reduced system cost, reduced po

GPS Receiver Baseband Processor

Description The GP4020 is a complete digital baseband processor for a Global Positioning System (GPS) receiver. It combines the 12-channel correlator function of the GP2021 with an advanced ARM7TDMI (Thumb) microprocessor to achieve a higher level of integration, reduced system cost, reduced po

GPS Receiver Baseband Processor

Description The GP4020 is a complete digital baseband processor for a Global Positioning System (GPS) receiver. It combines the 12-channel correlator function of the GP2021 with an advanced ARM7TDMI (Thumb) microprocessor to achieve a higher level of integration, reduced system cost, reduced po

GPS Receiver Baseband Processor

Description The GP4020 is a complete digital baseband processor for a Global Positioning System (GPS) receiver. It combines the 12-channel correlator function of the GP2021 with an advanced ARM7TDMI (Thumb) microprocessor to achieve a higher level of integration, reduced system cost, reduced po

GPS Receiver Baseband Processor

Description The GP4020 is a complete digital baseband processor for a Global Positioning System (GPS) receiver. It combines the 12-channel correlator function of the GP2021 with an advanced ARM7TDMI (Thumb) microprocessor to achieve a higher level of integration, reduced system cost, reduced po

GPS Receiver Baseband Processor

Description The GP4020 is a complete digital baseband processor for a Global Positioning System (GPS) receiver. It combines the 12-channel correlator function of the GP2021 with an advanced ARM7TDMI (Thumb) microprocessor to achieve a higher level of integration, reduced system cost, reduced po

4 AMP HIGH RELIABILITY SOFT GLASS PASSIVATED SILICON DIODES

FEATURES • PROPRIETARY SOFT GLASS® JUNCTION PASSIVATION FOR SUPERIOR RELIABILITY AND PERFORMANCE • VOID FREE VACUUM DIE SOLDERING FOR MAXIMUM MECHANICAL STRENGTH AND HEAT DISSIPATION (Solder Voids: Typical

4 AMP HIGH RELIABILITY SOFT GLASS PASSIVATED SILICON DIODES

FEATURES • PROPRIETARY SOFT GLASS® JUNCTION PASSIVATION FOR SUPERIOR RELIABILITY AND PERFORMANCE • VOID FREE VACUUM DIE SOLDERING FOR MAXIMUM MECHANICAL STRENGTH AND HEAT DISSIPATION (Solder Voids: Typical

4 AMP HIGH RELIABILITY SOFT GLASS PASSIVATED SILICON DIODES

FEATURES • PROPRIETARY SOFT GLASS® JUNCTION PASSIVATION FOR SUPERIOR RELIABILITY AND PERFORMANCE • VOID FREE VACUUM DIE SOLDERING FOR MAXIMUM MECHANICAL STRENGTH AND HEAT DISSIPATION (Solder Voids: Typical

P-Channel MOSFET

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

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Low Switching Losses

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SINTERED GLASS JUNCTION PLASTIC RECTIFIER VOLTAGE: 1000V CURRENT: 4.0A

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