Low VCE(SAT) Dual Switch IGBT Module Preliminary Information

The Powerline range of high power modules includes dual and single switch configurations covering voltages from 600V to 3300V and currents up to 4800A. The GP401DDS18 is a dual switch 1800V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. Designed with low VCE(SAT)

Low VCE(SAT) Dual Switch IGBT Module

The Powerline range of high power modules includes dual and single switch configurations covering voltages from 600V to 3300V and currents up to 4800A.\nThe GP401DDS18 is a dual switch 1800V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. Designed with low VCE(SAT) to m ■ Low VCE(SAT)\n■ Non Punch Through Silicon\n■ Isolated Copper Baseplate\n■ Low Inductance Internal Construction;