位置:GP401DDM18 > GP401DDM18详情

GP401DDM18中文资料

厂家型号

GP401DDM18

文件大小

95.18Kbytes

页面数量

7

功能描述

Hi-Reliability Dual Switch Low VCE(SAT) IGBT Module Advance Information

数据手册

下载地址一下载地址二

生产厂商

DYNEX

GP401DDM18数据手册规格书PDF详情

The Powerline range of high power modules includes dual and single switch configurations covering voltages from 1200V to 3300V and currents up to 4800A.

The GP401DDM18 is a dual switch 1800V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. Designed with low VCE(SAT) to minimise conduction losses, the module is of particular relevance in low to medium frequency applications. The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability in demanding applications. This device is optimised for traction drives and other applications requiring high thermal cycling capability

FEATURES

■ Low VCE(SAT)

■ 400A Per Switch

■ High Thermal Cycling Capability

■ Non Punch Through Silicon

■ Isolated MMC Base with AlN Substrates

APPLICATIONS

■ High Reliability

■ Motor Controllers

■ Traction Drives

■ Low Loss System Retrofit

GP401DDM18产品属性

  • 类型

    描述

  • 型号

    GP401DDM18

  • 制造商

    DYNEX

  • 制造商全称

    Dynex Semiconductor

  • 功能描述

    Hi-Reliability Dual Switch Low VCE(SAT) IGBT Module Advance Information

更新时间:2025-10-10 15:14:00
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