4 AMP HIGH RELIABILITY SOFT GLASS PASSIVATED SILICON DIODES

FEATURES • PROPRIETARY SOFT GLASS® JUNCTION PASSIVATION FOR SUPERIOR RELIABILITY AND PERFORMANCE • VOID FREE VACUUM DIE SOLDERING FOR MAXIMUM MECHANICAL STRENGTH AND HEAT DISSIPATION (Solder Voids: Typical

Hi-Reliability Dual Switch Low VCE(SAT) IGBT Module Advance Information

The Powerline range of high power modules includes dual and single switch configurations covering voltages from 1200V to 3300V and currents up to 4800A. The GP401DDM18 is a dual switch 1800V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. Designed with low VCE(SAT)

Hi-Reliability Dual Switch Low VCE(SAT) IGBT Module

The Powerline range of high power modules includes dual and single switch configurations covering voltages from 1200V to 3300V and currents up to 4800A.\nThe GP401DDM18 is a dual switch 1800V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. Designed with low VCE(SAT) to ■ Low VCE(SAT)\n■ 400A Per Switch\n■ High Thermal Cycling Capability\n■ Non Punch Through Silicon\n■ Isolated MMC Base with AlN Substrates;

Low VCE(SAT) Dual Switch IGBT Module Preliminary Information

The Powerline range of high power modules includes dual and single switch configurations covering voltages from 600V to 3300V and currents up to 4800A. The GP401DDS18 is a dual switch 1800V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. Designed with low VCE(SAT)

Powerline N-Channel Single Switch Low Loss IGBT Module Preliminary Information

The GP401LSS18 is a single switch 1800V, robust n channel enhancement mode insulated gate bipolar transistor (IGBT) module. Designed for low power loss, the module is suitable for a variety of high voltage applications in motor drives and power conversion. The high impedance gate simplifies gate d

二极管

普通整流二极管

IN-LINE MINIATURE SINGLE PHASE SILICON BRIDGE(VOLTAGE - 50 to 800 Volts CURRENT - 4.0 Amperes)

FEATURES • Plastic material has Underwriters Laboratory Flammability Classification 94V-O • Ideal for printed circuit board • Reliable low cost construction utilizing molded plastic technique • Surge overload rating: 200 Amperes peak • Pb free product are available : 99 Sn above can meet Rohs

SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features low feedback and output capacitances res

Fast Settling, Wideband High-Gain Monolithic Op Amp

文件：388.71 Kbytes Page：6 Pages

Fast Settling, Wideband High-Gain Monolithic Op Amp

文件：388.71 Kbytes Page：6 Pages

Fast Settling, Wideband High-Gain Monolithic Op Amp

文件：388.71 Kbytes Page：6 Pages