4 AMP HIGH RELIABILITY SOFT GLASS PASSIVATED SILICON DIODES

FEATURES • PROPRIETARY SOFT GLASS® JUNCTION PASSIVATION FOR SUPERIOR RELIABILITY AND PERFORMANCE • VOID FREE VACUUM DIE SOLDERING FOR MAXIMUM MECHANICAL STRENGTH AND HEAT DISSIPATION (Solder Voids: Typical

Hi-Reliability Dual Switch Low VCE(SAT) IGBT Module Advance Information

The Powerline range of high power modules includes dual and single switch configurations covering voltages from 1200V to 3300V and currents up to 4800A. The GP401DDM18 is a dual switch 1800V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. Designed with low VCE(SAT)

Low VCE(SAT) Dual Switch IGBT Module Preliminary Information

The Powerline range of high power modules includes dual and single switch configurations covering voltages from 600V to 3300V and currents up to 4800A. The GP401DDS18 is a dual switch 1800V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. Designed with low VCE(SAT)

Powerline N-Channel Single Switch Low Loss IGBT Module Preliminary Information

The GP401LSS18 is a single switch 1800V, robust n channel enhancement mode insulated gate bipolar transistor (IGBT) module. Designed for low power loss, the module is suitable for a variety of high voltage applications in motor drives and power conversion. The high impedance gate simplifies gate d

二极管

普通整流二极管

Hi-Reliability Dual Switch Low VCE(SAT) IGBT Module

Replace “XX” with 01 through 12 for number of poles 11/16 (.688) pitch

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Kapazit채t 20 Std (vorgegeben) 60Ah

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Premier Supplier of Electronic Hardware

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Low-ESR, Wide Temperature Grade The Ultimate in Cold Performance and ESR

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The Ultimate in Cold Performance and ESR

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