Hi-Reliability Dual Switch Low VCE(SAT) IGBT Module Advance Information

The Powerline range of high power modules includes dual and single switch configurations covering voltages from 1200V to 3300V and currents up to 4800A. The GP401DDM18 is a dual switch 1800V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. Designed with low VCE(SAT)

Hi-Reliability Dual Switch Low VCE(SAT) IGBT Module

The Powerline range of high power modules includes dual and single switch configurations covering voltages from 1200V to 3300V and currents up to 4800A.\nThe GP401DDM18 is a dual switch 1800V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. Designed with low VCE(SAT) to ■ Low VCE(SAT)\n■ 400A Per Switch\n■ High Thermal Cycling Capability\n■ Non Punch Through Silicon\n■ Isolated MMC Base with AlN Substrates;