NPN EPITAXIAL TRANSISTOR

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N P N E P I T A X I A L T R A N S I S T O R

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N P N E P I T A X I A L T R A N S I S T O R

NPN EPITAXIAL TRANSISTOR

N P N E P I T A X I A L T R A N S I S T O R

N P N E P I T A X I A L T R A N S I S T O R

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NPN EPITAXIAL TRANSISTOR

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6-Pin DIP Optoisolators Darlington Ouput(No Base Connection)

The MOC8030 and MOC8050 devices consist of gallium arsenide infrared emitting diodes optically coupled to monolithic silicon photodarlington detectors. The chip to Pin 6 base connection has been eliminated to improve output performance in high noise environments. They are best suited for use in a

TRANSISTOR (NPN)

FEATURES ● Power Dissipation PCM : 1 W (Tamb=25°C) ● Collector Current ICM : 1.5 A ● Collector - Base Voltage V(BR)CBO : 40V

1.5A MOTOR DRIVER WITH BRAKE FUNCTION

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QPSK transmitter

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TDA8046H

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