Schottky Barrier Diodes TM For Mixers and Detectors

DESCRIPTION Schottky Barrier devices are currently available in single beamlead, dual “T”, ring quad and bridge quad configurations. Devices are available in monolithic form for hybrid applications as well as in hermetic or non-hermetic packages. Monolithic devices are recommended for highest fre

Silicon & GaAs Schottky Diodes

Schottky Barrier devices are currently available in single beamlead dual 'T' ring quad and bridge quad configurations. Devices are available in monolithic form for hybrid applications as well as in hermetic or non-hermetic packages. Monolithic devices are recommended for highest frequency broadband

Complementary

These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance. These devices are well suited

Dual P-Channel 2.5-V (G-S) MOSFET

FEATURES • TrenchFET® Power MOSFET

Dual P-Channel 2.5-V (G-S) MOSFET

Dual P-Channel 2.5-V (G-S) MOSFET 2.5-V Rated

Dual P-Channel 2.5V Specified PowerTrench MOSFET

General Description This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). Features • –5 A, –20 V, RDS(ON) = 50 mΩ @ VG

2N AND 2P-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：96.7 Kbytes Page：7 Pages