Dual P-Channel 2.5-V (G-S) MOSFET

FEATURES • TrenchFET® Power MOSFET

Dual P-Channel 2.5-V (G-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC

Dual P-Channel 2.5-V (G-S) MOSFET

Dual P-Channel 2.5-V (G-S) MOSFET

文件：210.4 Kbytes Page：4 Pages

Dual P-Channel 2.5-V (G-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC

Dual P-Channel 2.5-V (G-S) MOSFET

FEATURES • TrenchFET® Power MOSFET

Dual P-Channel 2.5-V (G-S) MOSFET

FEATURES • TrenchFET® Power MOSFET

Dual P-Channel 2.5-V (G-S) MOSFET

文件：210.4 Kbytes Page：4 Pages

RS232/423 Low Cap, #24-9c, FPO, O/A FoilBraid, PVC Jkt, CM

Product Description Computer EIA RS-232/423 Cable, 24 AWG stranded (7x32) tinned copper conductors, Datalene® insulation, overall Beldfoil® (100 coverage) + tinned copper braid shield (65 coverage), drain wire, PVC jacket.

Complementary

These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance. These devices are well suited

Schottky Barrier Diodes TM For Mixers and Detectors

DESCRIPTION Schottky Barrier devices are currently available in single beamlead, dual “T”, ring quad and bridge quad configurations. Devices are available in monolithic form for hybrid applications as well as in hermetic or non-hermetic packages. Monolithic devices are recommended for highest fre

2N AND 2P-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：96.7 Kbytes Page：7 Pages

SMD 14-Pin Triple TTL Compatible Active Delay Lines

文件：41.8 Kbytes Page：3 Pages