Complementary

These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance. These devices are well suited

互补，PowerTrench® MOSFET，20V

这些双N和P沟道增强模式功率场效应晶体管采用飞兆半导体先进的PowerTrench®工艺生产，这一先进工艺是专为最大限度地降低通态电阻并保持卓越开关性能而定制的。 这些器件非常适合需要线路内低功率损耗和快速开关的低电压和电池供电应用。 • Q1： -6.5A、-20V\n• RDS(ON) = 43 mΩ @ VGS = 2.5 VQ2： -5A、-20V;

Dual P-Channel 2.5-V (G-S) MOSFET

FEATURES • TrenchFET® Power MOSFET

Dual P-Channel 2.5-V (G-S) MOSFET

Dual P-Channel 2.5-V (G-S) MOSFET 2.5-V Rated

Dual P-Channel 2.5V Specified PowerTrench MOSFET

General Description This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). Features • –5 A, –20 V, RDS(ON) = 50 mΩ @ VG

2N AND 2P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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