General Description

This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V).

Features

• –5 A, –20 V, RDS(ON) = 50 mΩ @ VGS = –4.5 V

RDS(ON) = 74 mΩ @ VGS = –2.5 V

• Extended VGSS range (±12V) for battery applications

• Low gate charge

• High performance trench technology for extremely low RDS(ON)

• High power and current handling capability

Applications

• Load switch

• Motor drive

• DC/DC conversion

• Power management