单火线取电电路

Silicon Passive Devices

The GC9000 series spiral inductor chips are planar passivated coils supported on a high quality fused quartz substrate. These devices are designed to meet hybrid microwave circuit requirements through Ku (or J) band. The actual inductor, which is photo-etch defined on a quartz substrate, consists of

PASSIVE DEVICES - Spiral Bias Elements

DESCRIPTION The GC9000 series of spiral bias element chips are photolithographically fabricated planar spiral conductorssupported on a high quality fused quartz substrate. These devices are designed to meet hybrid microwave circuit requirements for DC power injection through Ku (or J) band. The

PASSIVE DEVICES - Spiral Bias Elements

DESCRIPTION The GC9000 series of spiral bias element chips are photolithographically fabricated planar spiral conductorssupported on a high quality fused quartz substrate. These devices are designed to meet hybrid microwave circuit requirements for DC power injection through Ku (or J) band. The

Silicon Passive Devices

The GC9000 series spiral inductor chips are planar passivated coils supported on a high quality fused quartz substrate. These devices are designed to meet hybrid microwave circuit requirements through Ku (or J) band. The actual inductor, which is photo-etch defined on a quartz substrate, consists of

封装/外壳：模具 功能：偏置网络 包装：卷带（TR） 描述：QUARTZ INDUCTOR NON HERMETIC CHI RF/IF，射频/中频和 RFID RF 其它 IC 和模块

封装/外壳：模具 功能：偏置网络 包装：卷带（TR） 描述：QUARTZ INDUCTOR NON HERMETIC CHI RF/IF，射频/中频和 RFID RF 其它 IC 和模块

VHF variable capacitance diode

DESCRIPTION The BB901 is a variable capacitance diode, fabricated in planar technology, and encapsulated in the SOT23 small plastic SMD package. FEATURES • Excellent linearity • Small plastic SMD package • C28: 1 pF; ratio: 13.5 APPLICATIONS • Electronic tuning in satellite tuners • Tunabl

Silicon n-channel dual gate MOS-FETs

DESCRIPTION Enhancement type field-effect transistors in plastic microminiature SOT143 and SOT143R envelopes, with source and substrate interconnected. They are intended for UHF and VHF applications, such as television tuners and professional communications equipment especially suited for low vol

Silicon n-channel dual gate MOS-FETs

DESCRIPTION Enhancement type field-effect transistors in plastic microminiature SOT143 and SOT143R envelopes, with source and substrate interconnected. They are intended for UHF and VHF applications, such as television tuners and professional communications equipment especially suited for low vol

17 dB 40-860 MHz VHF/UHF CATV/MATV AMPLIFIERS

The RF Line VHF/UHF CATV Amplifiers . . . designed for broadband applications requiring low–distortion amplification. Specifically intended for CATV/MATV market requirements. These amplifiers feature ion–implanted arsenic emitter transistors and an all gold metal system. • Specified C

5.0 mm Blue Series

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