单极霍尔开关

CMOS Positive Voltage Regulator

Description The G2300 provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness. The G2300 is universally used for all commercial-industrial surface mount applications. Features * Low on-resistance * Capable of 2.5V gate drive * Small Package Outl

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The G2302 provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness. Features * Capable of 2.5V gate drive * Small Package Outline

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The G2303 provides the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. Features • Super High Dense Cell Design for Extremely Low RDS(ON) • Reliable and Rugged Applications • Power Management in Notebook Computer • Portable Equipmen

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The G2304 provides the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. Features • Super High Dense Cell Design for Extremely Low RDS(ON) • Reliable and Rugged Applications • Power Management in Notebook Computer • Portable Equipmen

N-Channel Enhancement Mode Power MOSFET

Description The G2304 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

N-Channel Enhancement Mode Power MOSFET

Description The G2304A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The G2304A utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The G2304A is universally used for all commercial-industrial applications. Features * Simple Drive Requirement * Small Package Outlin

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The G2305 provides the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The G2305 is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.

P-Channel Enhancement Mode Power MOSFET

Description The G2305 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

P-Channel Enhancement Mode Power MOSFET

Description The G2305A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

P-Channel Enhancement Mode Power MOSFET

Description The G2305A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

P-Channel Enhancement Mode Power MOSFET

Description The G2305A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The G2305A provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness. The G2305A is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. F

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The G2306 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-23 package is universally used for all commercial-industrial applications. Features • Capable of 2.5V gate drive! • Lower on-r

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The G2306A utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The G2306A is universally used for all commercial-industrial applications. Features * Capable of 2.5V gate drive * Lower on-resistanc

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The G2307 provides the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The G2307 is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Applic

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The G2308 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The G2308 is universally used for all commercial-industrial applications. Features * Simple Drive Requirement * Small Package Outline

Oblong, Domed, PCB Mount

Oblong, Domed, PCB Mount Right Angle View Indicator Array The G23XXB indicator array has been specifically designed for high density packaging while maintaining visibility. From 4 to 16 LEDs are located on 2.54 mm(0.1) centers, which makes it ideal as status indicators when used in conjunction w

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The G2308E utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-23 package is universally used for all commercial-industrial applications. Features * Capable of 2.5V gate drive * Lower on-r

Oblong, Domed, PCB Mount

Oblong, Domed, PCB Mount Direct View Indicator Array The G23XXS indicator array has been specifically designed for high density packaging while maintaining visibility. From 4 to 16 LEDs are located on 2.54 mm(0.1) centers, which makes it ideal as a status indicator when used in conjunction with

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

BVDSS -30V RDS(ON) 75m
ID -3.7A Description The G2309 provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness. The G2309 is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applic

P-Channel Enhancement Mode Power MOSFET

Description The G230P06D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

P-Channel Enhancement Mode Power MOSFET

Description The G230P06F uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

P-Channel Enhancement Mode Power MOSFET

Description The G230P06K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

P-Channel Enhancement Mode Power MOSFET

Description The G230P06KA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

P-Channel Enhancement Mode Power MOSFET

Description The G230P06M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

P-Channel Enhancement Mode Power MOSFET

Description The G230P06S uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

P-Channel Enhancement Mode Power MOSFET

Description The G230P06T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

CMOS Positive Voltage Regulator

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POWER MOSFET

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Screw-In Rubber Pocket Bumpers

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包装：散装 描述：IMPELLER GRILLE 230MM 风扇，热管理 风扇 - 护手板，滤波器和套管

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N-Channel 30-V (D-S) MOSFET

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Screw-In Rubber Pocket Bumpers

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P-Channel 30 V (D-S) MOSFET

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Low voltage fast-switching PNP power transistor

Description The device is a PNP transistor manufactured using new “PB-HCD” (power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage. Features • Very low collector-emitter saturation voltage • Hig

MINIATURE FUSES - 5x20 mm

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5x20 mm MINIATURE FUSES

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Modular Radio Telemetry System

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1/4 FLAT PLUG PHONE PLUGS

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