位置:首页 > IC中文资料第5580页 > G2304A
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
G2304A | N-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The G2304A utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The G2304A is universally used for all commercial-industrial applications. Features * Simple Drive Requirement * Small Package Outlin | GTM 勤益投资控股 | ||
G2304A | 丝印代码:G2304;N-Channel Enhancement Mode Power MOSFET Description The G2304A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters | GOFORD 谷峰半导体 | ||
G2304A | MOSFET Power MOSFETs find widespread use across various applications due to their low ON resistance, making them particularly appealing. By minimizing power dissipation, they contribute to cost reduction, smaller form factors, and less cooling requirements, resulting in significant enhancements for electro | GOFORD 谷峰半导体 | ||
G2304A | N - C H A N N E L E N H A N C E M E N T M O D E P O W E R M O S F E T 文件:374.52 Kbytes Page:4 Pages | ETL 亚历电子 | ||
G2304A | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | GTM 勤益投资控股 | ||
G2304A | N - C H A N N E L E N H A N C E M E N T M O D E P O W E R M O S F E T | ETL 亚历电子 | ||
Silicon NPN Transistor High Current, High Speed Switch (Compl to NTE2314) Description: The NTE2304 is a silicon NPN transistor in a TO3P type package. Typical applications include relay drivers, high–speed inverters, converters, and other general high–current switching applications. Features: • Low Collector–Emitter Saturation Voltage • Wide ASO and Resist | NTE | |||
GENERAL PURPOSE LOW-NOISE AMPLIFIER Product Description The RF2304 is a low-noise small-signal amplifier. The device is manufactured on a low-cost Gallium Arsenide MESFET process, and has been designed for use as a gain block in high-end communication systems operating from less than 300MHz to above 2.5GHz. With +6dBm output power, | RFMD 威讯联合 | |||
N-channel enhancement mode field-effect transistor Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology Product availability: SI2304DS in SOT23. Features ■ TrenchMOS™ technology ■ Very fast switching ■ Subminiature surface mount package. Applications ■ Battery management | PHILIPS 飞利浦 | |||
DC- 20 GHz SP4T PIN Switch Description The TriQuint TGS2304-SCC is a GaAs monolithic PIN-diode single-pole, four-throw switch, in chip form, that operates from DC to 20 GHz. Each arm consists of one series and two shunt PIN diodes. At a bias current of 10 mA per RF output arm, typical midband insertion loss is 0.6 dB; midb | TRIQUINT | |||
DC- 20 GHz SP4T PIN Switch Description The TriQuint TGS2304-SCC is a GaAs monolithic PIN-diode single-pole, four-throw switch, in chip form, that operates from DC to 20 GHz. Each arm consists of one series and two shunt PIN diodes. At a bias current of 10 mA per RF output arm, typical midband insertion loss is 0.6 dB; midb | TRIQUINT |
G2304A产品属性
- 类型
描述
- 型号
G2304A
- 制造商
GTM
- 制造商全称
GTM
- 功能描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
GTM |
22+ |
SOT-23 |
20000 |
只做原装 |
|||
GTM |
24+ |
SOT-23 |
9600 |
原装现货,优势供应,支持实单! |
|||
GTM |
25+ |
SOT-23 |
35188 |
GTM全新特价G2304A即刻询购立享优惠#长期有货 |
|||
GTM |
25+ |
SOT-23 |
90000 |
全新原装现货 |
|||
GTM |
26+ |
SOT-23 |
98000 |
原装现货假一罚十 |
|||
GTM |
23+ |
SOT-23 |
50000 |
原装正品 支持实单 |
|||
GTM |
23+ |
SOT-23 |
50000 |
全新原装正品现货,支持订货 |
|||
26+ |
SOT-23 |
50000 |
芯为深仓现货 |
||||
GTM |
25+ |
SOT-23 |
9010 |
本公司 只做全新原装正品 |
G2304A规格书下载地址
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2019-4-16G2995-DDR终端稳压器
概述 在G2995是一个线性稳压器设计,以满足JEDEC SSTL- 2和SSTL- 3(系列存根终止逻辑)的DDR- SDRAM终端规范。它包含一个高速运算放大器,可提供出色的负载瞬态响应。这设备可以提供1.5A的连续电流和瞬态峰达至所需的应用程序中的3ADDR- SDRAM终止。具有独立VSENSE引脚,G2995可提供卓越的负载调节。在G2995提供作为参考VREF输出芯片组和DIMM的申请。在G2995可以轻松地提供准确的VTT和VREF电压,无需外部电阻器的印刷电路板领域可以减少。静态电流低至作为280μA@2.5V。因此,电力消耗满足低功耗的应用。
2013-1-29
DdatasheetPDF页码索引
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