丝印代码：G2304；N-Channel Enhancement Mode Power MOSFET

Description The G2304 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

丝印代码：G2304；N-Channel Enhancement Mode Power MOSFET

Description The G2304A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The G2304 provides the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. Features • Super High Dense Cell Design for Extremely Low RDS(ON) • Reliable and Rugged Applications • Power Management in Notebook Computer • Portable Equipmen

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N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Trench Mosfet

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N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The G2304A utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The G2304A is universally used for all commercial-industrial applications. Features * Simple Drive Requirement * Small Package Outlin

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Silicon NPN Transistor High Current, High Speed Switch (Compl to NTE2314)

Description: The NTE2304 is a silicon NPN transistor in a TO3P type package. Typical applications include relay drivers, high–speed inverters, converters, and other general high–current switching applications. Features: • Low Collector–Emitter Saturation Voltage • Wide ASO and Resist

GENERAL PURPOSE LOW-NOISE AMPLIFIER

Product Description The RF2304 is a low-noise small-signal amplifier. The device is manufactured on a low-cost Gallium Arsenide MESFET process, and has been designed for use as a gain block in high-end communication systems operating from less than 300MHz to above 2.5GHz. With +6dBm output power,

N-channel enhancement mode field-effect transistor

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology Product availability: SI2304DS in SOT23. Features ■ TrenchMOS™ technology ■ Very fast switching ■ Subminiature surface mount package. Applications ■ Battery management

DC- 20 GHz SP4T PIN Switch

Description The TriQuint TGS2304-SCC is a GaAs monolithic PIN-diode single-pole, four-throw switch, in chip form, that operates from DC to 20 GHz. Each arm consists of one series and two shunt PIN diodes. At a bias current of 10 mA per RF output arm, typical midband insertion loss is 0.6 dB; midb

DC- 20 GHz SP4T PIN Switch

Description The TriQuint TGS2304-SCC is a GaAs monolithic PIN-diode single-pole, four-throw switch, in chip form, that operates from DC to 20 GHz. Each arm consists of one series and two shunt PIN diodes. At a bias current of 10 mA per RF output arm, typical midband insertion loss is 0.6 dB; midb