N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The G2306 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-23 package is universally used for all commercial-industrial applications. Features • Capable of 2.5V gate drive! • Lower on-r

N - C H A N N E L E N H A N C E M E N T M O D E P O W E R M O S F E T

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N - C H A N N E L E N H A N C E M E N T M O D E P O W E R M O S F E T

POWER MOSFET

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The G2306A utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The G2306A is universally used for all commercial-industrial applications. Features * Capable of 2.5V gate drive * Lower on-resistanc

N - C H A N N E L E N H A N C E M E N T M O D E P O W E R M O S F E T

文件：333.25 Kbytes Page：4 Pages

N - C H A N N E L E N H A N C E M E N T M O D E P O W E R M O S F E T

N-Channel 30-V (D-S) MOSFET

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Silicon Complementary Transistors High Voltage Power Amplifier

Description: The NTE2305 (NPN) and NTE2306 (PNP) are silicon complementary transistors in a TO218 type package designed for use in high power audio amplifier applications and high voltage switching regulator circuits. Features: • High Collector–Emitter Sustaining Voltage: VCEO(sus) = 16

PLLatinum??Low Power Frequency Synthesizer for RF Personal Communications

文件：300.91 Kbytes Page：19 Pages

PLLatinum??Low Power Frequency Synthesizer for RF Personal Communications

文件：300.91 Kbytes Page：19 Pages

PLLatinum??Low Power Frequency Synthesizer for RF Personal Communications

文件：300.91 Kbytes Page：19 Pages

PLLatinum??Low Power Frequency Synthesizer for RF Personal Communications

文件：300.91 Kbytes Page：19 Pages