Multipurpose Boxes with Lids

Features: • The LID and base incorporate a tongue and groove sealing system with a neoprene gasket • Wall mounting holes and LID fixing screws are outside the sealing area thus preventing the ingress of moisture and dust • Designed to IP 65 of IEC 529 and nema 4 (dust and hoseproof) • Internal

Compact MiniDIP, 2W Single & Dual Output DC/DC Converters

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塑料机壳

丝印代码：G2053；GaAs INTEGRATED CIRCUIT

FEATURES • HIGH ISOLATION : ISL = 38 dB TYP. @ f = 0.95 to 2.15 GHz, VCONT = +5.0 V/0 V • CONTROL VOLTAGE : VCONT (H) = +4.5 to +5.5 V (+5.0 V TYP.) : VCONT (L) = −0.5 to +0.5 V (0 V TYP.) • LOW INSERTION LOSS : LINS = 6.0 dB TYP. @ f = 0.95 to 2.15 GHz, VCONT = +5.0 V/0 V, ZO = 50 Ω • 20-PIN

丝印代码：G2054；GaAs INTEGRATED CIRCUIT

FEATURES • High isolation : ISL = 40 dB TYP. @ f = 0.95 to 2.15 GHz, VCONT = +5.0 V/0 V • Control voltage : VCONT (H) = +3.0 to +5.5 V (+5.0 V TYP.) : VCONT (L) = −0.5 to +0.5 V (0 V TYP.) • Low insertion loss : LINS = 6.0 dB TYP. @ f = 0.95 to 2.15 GHz, VCONT = +5.0 V/0 V, ZO = 50 Ω • 20-pin

丝印代码：G2054；GaAs INTEGRATED CIRCUIT

FEATURES • High isolation : ISL = 40 dB TYP. @ f = 0.95 to 2.15 GHz, VCONT = +5.0 V/0 V • Control voltage : VCONT (H) = +3.0 to +5.5 V (+5.0 V TYP.) : VCONT (L) = −0.5 to +0.5 V (0 V TYP.) • Low insertion loss : LINS = 6.0 dB TYP. @ f = 0.95 to 2.15 GHz, VCONT = +5.0 V/0 V, ZO = 50 Ω • 20-pin

全桥/半桥驱动

电机驱动

Enclosures

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包装：散装 描述：FAN GUARD 205MM 风扇，热管理 风扇 - 护手板，滤波器和套管

Low Cost, 2W Compact MiniDIP DC/DC Converters

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High Isolation, 2W Low Cost, MiniDIP DC/DC Converters

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Compact MiniDIP, 2W High Isolation DC/DC Converters

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Compact MiniDIP, 2W Wide Input Range DC/DC Converters

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N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope, intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching

POWER TRANSISTORS(2.5A,1300-1500V,36W)

HORIZONTAL DEFLECTION TRANSISTOR 2.5 AMPERE POWER TRANSISTORS 1300-1500 VOLTS 36 WATTS

SMALL OUTLINE OPTOISOLATORS TRANSISTOR OUTPUT

These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high density applications, and eliminate the need for through–the–board mounti

SCHOTTKY BARRIER RECTIFIERS(2.0A,20-60V)

Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overly contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes.

Alternate Source/ Second Source Photodiodes

PRODUCT DESCRIPTION Large area planar silicon photodiode in a waterclear, cast epoxy sidelooker, similar in outline to the TO-92 package. These diodes exhibit low dark current under reverse bias and fast speed of response.