微功率1～3W G_S-1WR2系列，1W,DC-DC模块电源（19.5*9.8*12.5mm）

是小体积，高效率的微小功率隔离非稳压输出DC/DC模块电源。 ○  特点：定电压输入，隔离非稳压双路输出，1W功率○  隔离电压：6000Vdc\n○  效率 高达 ：80%\n○  工作环境温度：-40°C～+ 85°С\n○  MTBF≥350万小时 (35×105Hrs)\n○  符合RoHS指令\n○  线性调节率 (输入电压变化±1%时)：±1.2% \n○  负载调节率(10%-100%满载) ：15%\n○  纹波 / 噪声(20MHz带宽) 150mVp-p \n○  小型SIP封装\n○  无需外加元件\n○  短路保护，自动恢复\n○  塑料外壳，满足UL94-V0要求;

定压输入非稳压输出S/DIP(0.25-3W)

G_S-1WR3&H_S-1WR3系列产品满足加强绝缘的要求，主要用于需要小体积高隔离、低隔离电容、低漏电流的电源应用场合，适用于医疗、电力、IGBT驱动等应用场合。该产品适用于：1.输入电源的电压比较稳定（电压变化范围±10%Vin）；2.输入输出之间要求隔离（隔离电压≤5000VACor6000VDC）；3.对输出电压稳定度和输出纹波噪声要求不高；如：医疗采集隔离，高压采集电路，IGBT驱动电路等。

Metric Snap Bushings

文件：155 Kbytes Page：1 Pages

包装：卷带（TR） 描述：DIODE SCHOTTKY 120V 15A F4 分立半导体产品 二极管 - 整流器 - 单

萧特基 (Schottky)(.5A 和以上)

FIXED INPUT, ISOLATED & UNREGULATED SINGLE / DUAL OUTPUT

文件：1.98746 Mbytes Page：5 Pages

1W, FIXED INPUT, ISOLATED & UNREGULATED SINGLE / DUAL OUTPUT

文件：1.01458 Mbytes Page：5 Pages

Reinforced insulation

文件：1.25202 Mbytes Page：5 Pages

Reinforced insulation

文件：1.24114 Mbytes Page：5 Pages

DUAL-IN-LINE GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 1.0~1.5 Amperes)

VOLTAGE - 50 to 1000 Volts CURRENT - 1.0~1.5 Amperes FEATURES ● Plastic material used carries Underwriters Laboratory recognition 94V-O ● Low leakage ● Surge overload rating— 30~50 amperes peak ● Ideal for printed circuit board ● Exceeds environmental standards of MIL-S-19500/228

N-CHANNEL BROADBAND RF POWER MOSFET

The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast

N-CHANNEL BROADBAND RF POWER MOSFET

Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. • Guaranteed Performance at 175 MHz, 50 V: Output P

POWER TRANSISTORS(7A,300-400V,80W)

NPN SILICON POWER DARLINGTON TRANSISTORS . . . designed for use in automotive ignition, switching and motor control applications. FEATURES: ● Collector−Emitter Sustaining Voltage: VCEO(sus) = 300V (Min) - TIP150 = 350V (Min) - TIP151 = 400V

GaAs Infrared Light Emitting Diodes

文件：40.94 Kbytes Page：2 Pages