P-Channel Enhancement Mode Power MOSFET

Description The G04P10HE uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

TRANSIENT VOLTAGE SUPPRESSOR

VBR : 6.8 - 440 Volts PPK : 400 Watts FEATURES : * 400W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min) * Typical IR less then 1mA above 10V

TRANSIENT VOLTAGE SUPPRESSOR

BREAKDOWN VOLTAGE: 5.8 --- 376 V PEAK PULSE POWER: 400 W FEATURES ♦ Plastic package has underwriters laboratory flammability classification 94V-0 ♦ Glass passivated junction ♦ 400W peak pulse power capability with a 10/1000μs waveform, repetition rate (duty cycle): 0.01 ♦ Excellent clamping c

P-Channel 100 V (D-S) MOSFET

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P-Channel 100 V (D-S) MOSFET

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MINI TYPE LED LAMPS

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