您好,欢迎来到114ic资料网！

芯片资料
  • 数据手册
  • 丝印反查
  • 库存查询
  • 行业新闻
  • 生产厂家
  • 替换型号
  • 晶体管

位置：首页 > IC中文资料第8931页 > BZW04P10

型号 功能描述 生产厂家&企业 LOGO 操作
BZW04P10

TRANSIENTVOLTAGESUPPRESSOR

VBR:6.8-440Volts PPK:400Watts FEATURES: *400Wsurgecapabilityat1ms *Excellentclampingcapability *Lowzenerimpedance *Fastresponsetime:typicallylessthen1.0psfrom0volttoVBR(min) *TypicalIRlessthen1mAabove10V

EIC

EIC discrete Semiconductors

EIC
BZW04P10

TRANSIENTVOLTAGESUPPRESSOR

BREAKDOWNVOLTAGE:5.8---376VPEAKPULSEPOWER:400W FEATURES ♦Plasticpackagehasunderwriterslaboratoryflammabilityclassification94V-0 ♦Glasspassivatedjunction ♦400Wpeakpulsepowercapabilitywitha10/1000μswaveform,repetitionrate(dutycycle):0.01 ♦Excellentclampingc

BILINGalaxy Semi-Conductor Holdings Limited

银河微电常州银河世纪微电子股份有限公司

BILIN
BZW04P10

GLASSPASSIVATEDJUNCTIONTRANSIENTVOLTAGESUPPRESSOR

FEATURES •PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-O •GlasspassivatedchipjunctioninDO-41package •400Wsurgecapabilityat1ms •Excellentclampingcapability •Lowzenerimpedance •Lowincrementalsurgeresistance •Excellentclampingcapability

MDE

MDE Semiconductor, Inc.

MDE
BZW04P10

TransientVoltageSuppressor

BREAKDOWNVOLTAGE:5.8---376VPEAKPULSEPOWER:400W Features ♦Plasticpackagehasunderwriterslaboratoryflammabilityclassification94V-0 ♦Glasspassivatedjunction ♦400Wpeakpulsepowercapabilitywitha10/1000μswaveform,repetitionrate(dutycycle):0.01 ♦Excellen

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

LUGUANG
BZW04P10

TransientVoltageSuppressor

BREAKDOWNVOLTAGE:5.8---376VPEAKPULSEPOWER:400W Features ♦Plasticpackagehasunderwriterslaboratoryflammabilityclassification94V-0 ♦Glasspassivatedjunction ♦400Wpeakpulsepowercapabilitywitha10/1000μswaveform,repetitionrate(dutycycle):0.01 ♦Excellen

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

LUGUANG
BZW04P10

GLASSPASSIVATEDJUNCTIONTRANSIENTVOLTAGESUPPRESSOR

文件：200.66 Kbytes Page：4 Pages

MDE

MDE Semiconductor, Inc.

MDE
BZW04P10

AXIALLEADEDTRANSIENTVOLTAGESUPPRESSORSDIODES

文件：509.04 Kbytes Page：4 Pages

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

SUNMATE
BZW04P10

TransZorbTransientVoltageSuppressors

文件：393.28 Kbytes Page：6 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
BZW04P10

MINITYPELEDLAMPS

文件：293.43 Kbytes Page：1 Pages

DBLECTRODB Lectro Inc

迪贝电子

DBLECTRO
BZW04P102

TRANSZORB??TRANSIENTVOLTAGESUPPRESSOR

Stand-offVoltage-5.8to376VoltsPeakPulsePower-400Watts FEATURES ♦PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-0 ♦Glasspassivatedchipjunction ♦400Wpeakpulsepowercapabilitywitha10/1000µswaveform, repetitionrate(dutycycle):0.0

GE

GE Industrial Company

GE
BZW04P102

TRANSIENTVOLTAGESUPPRESSOR

VBR:6.8-440Volts PPK:400Watts FEATURES: *400Wsurgecapabilityat1ms *Excellentclampingcapability *Lowzenerimpedance *Fastresponsetime:typicallylessthen1.0psfrom0volttoVBR(min) *TypicalIRlessthen1mAabove10V

EIC

EIC discrete Semiconductors

EIC
BZW04P102

TRANSIENTVOLTAGESUPPRESSOR

BREAKDOWNVOLTAGE:5.8---376VPEAKPULSEPOWER:400W FEATURES ♦Plasticpackagehasunderwriterslaboratoryflammabilityclassification94V-0 ♦Glasspassivatedjunction ♦400Wpeakpulsepowercapabilitywitha10/1000μswaveform,repetitionrate(dutycycle):0.01 ♦Excellentclampingc

BILINGalaxy Semi-Conductor Holdings Limited

银河微电常州银河世纪微电子股份有限公司

BILIN
BZW04P102

TRANSZORB®TransientVoltageSuppressors

FEATURES •Glasspassivatedchipjunction •Availableinuni-directionalandbi-directional •400Wpeakpulsepowercapabilitywitha10/1000μswaveform,repetitiverate(dutycycle):0.01 •Excellentclampingcapability •Veryfastresponsetime •Lowincrementalsurgeresistance •Sold

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
BZW04P102

TransientVoltageSuppressor

BREAKDOWNVOLTAGE:5.8---376VPEAKPULSEPOWER:400W Features ♦Plasticpackagehasunderwriterslaboratoryflammabilityclassification94V-0 ♦Glasspassivatedjunction ♦400Wpeakpulsepowercapabilitywitha10/1000μswaveform,repetitionrate(dutycycle):0.01 ♦Excellen

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

LUGUANG
BZW04P102

TransientVoltageSuppressors

FEATURES •Glasspassivatedchipjunction •Availableinuni-directionalandbi-directional •400Wpeakpulsepowercapabilitywitha10/1000µswaveform,repetitiverate(dutycycle):0.01 •Excellentclampingcapability •Veryfastresponsetime •Lowincrementalsurgeresist

TAYCHIPSTShenzhen Taychipst Electronic Co., Ltd

泰迪斯电子深圳市泰迪斯电子科技有限公司

TAYCHIPST
BZW04P102B

TransientVoltageSuppressors

FEATURES •Glasspassivatedchipjunction •Availableinuni-directionalandbi-directional •400Wpeakpulsepowercapabilitywitha10/1000µswaveform,repetitiverate(dutycycle):0.01 •Excellentclampingcapability •Veryfastresponsetime •Lowincrementalsurgeresist

TAYCHIPSTShenzhen Taychipst Electronic Co., Ltd

泰迪斯电子深圳市泰迪斯电子科技有限公司

TAYCHIPST
BZW04P102B

TRANSZORB®TransientVoltageSuppressors

FEATURES •Glasspassivatedchipjunction •Availableinuni-directionalandbi-directional •400Wpeakpulsepowercapabilitywitha10/1000μswaveform,repetitiverate(dutycycle):0.01 •Excellentclampingcapability •Veryfastresponsetime •Lowincrementalsurgeresistance •Sold

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
BZW04P102B

GLASSPASSIVATEDJUNCTIONTRANSIENTVOLTAGESUPPRESSORVOLTAGE-6.8to440Volts400WattsPeak1.0WattSteadyStae

VOLTAGE-6.8to440Volts400WattsPeak1.0WattSteadyStae FEATURES ■Plasticpackage ■GlasspassivatedchipjunctioninDO-41Package ■400Wsurgecapabilityat10/1000µswavefromExcellentclampingcapability ■Lowzenerimpedance ■Fastresponsetime:typicallylesst

DBLECTRODB Lectro Inc

迪贝电子

DBLECTRO
BZW04P102B

TRANSIENTVOLTAGESUPPRESSOR

BREAKDOWNVOLTAGE:5.8---376VPEAKPULSEPOWER:400W FEATURES ♦Plasticpackagehasunderwriterslaboratoryflammabilityclassification94V-0 ♦Glasspassivatedjunction ♦400Wpeakpulsepowercapabilitywitha10/1000μswaveform,repetitionrate(dutycycle):0.01 ♦Excellentclampingc

BILINGalaxy Semi-Conductor Holdings Limited

银河微电常州银河世纪微电子股份有限公司

BILIN
BZW04P10A

400WattsAxialLeadedTransientVoltageSuppressor

VOLTAGERANGE:5.8-376VPOWER:400Watts Features ●ConstructedwithGlassPassivatedDie ●UniandBidirectionalVersionsAvailable ●ExcellentClampingCapability ●FastResponseTime ●PlasticCaseMaterialhasULFlammabilityClassificationRating94V-O

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

SUNMATE
BZW04P10B

TransientVoltageSuppressor

BREAKDOWNVOLTAGE:5.8---376VPEAKPULSEPOWER:400W Features ♦Plasticpackagehasunderwriterslaboratoryflammabilityclassification94V-0 ♦Glasspassivatedjunction ♦400Wpeakpulsepowercapabilitywitha10/1000μswaveform,repetitionrate(dutycycle):0.01 ♦Excellen

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

LUGUANG
BZW04P10B

GLASSPASSIVATEDJUNCTIONTRANSIENTVOLTAGESUPPRESSOR

FEATURES •PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-O •GlasspassivatedchipjunctioninDO-41package •400Wsurgecapabilityat1ms •Excellentclampingcapability •Lowzenerimpedance •Lowincrementalsurgeresistance •Excellentclampingcapability

MDE

MDE Semiconductor, Inc.

MDE
BZW04P10B

TRANSIENTVOLTAGESUPPRESSOR

BREAKDOWNVOLTAGE:5.8---376VPEAKPULSEPOWER:400W FEATURES ♦Plasticpackagehasunderwriterslaboratoryflammabilityclassification94V-0 ♦Glasspassivatedjunction ♦400Wpeakpulsepowercapabilitywitha10/1000μswaveform,repetitionrate(dutycycle):0.01 ♦Excellentclampingc

BILINGalaxy Semi-Conductor Holdings Limited

银河微电常州银河世纪微电子股份有限公司

BILIN
BZW04P10B

GLASSPASSIVATEDJUNCTIONTRANSIENTVOLTAGESUPPRESSORVOLTAGE-6.8to440Volts400WattsPeak1.0WattSteadyStae

VOLTAGE-6.8to440Volts400WattsPeak1.0WattSteadyStae FEATURES ■Plasticpackage ■GlasspassivatedchipjunctioninDO-41Package ■400Wsurgecapabilityat10/1000µswavefromExcellentclampingcapability ■Lowzenerimpedance ■Fastresponsetime:typicallylesst

DBLECTRODB Lectro Inc

迪贝电子

DBLECTRO
BZW04P10-E3/54

TRANSZORB®TransientVoltageSuppressors

FEATURES •Glasspassivatedchipjunction •Availableinuni-directionalandbi-directional •400Wpeakpulsepowercapabilitywitha10/1000μswaveform,repetitiverate(dutycycle):0.01 •Excellentclampingcapability •Veryfastresponsetime •Lowincrementalsurgeresistance •Sold

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
BZW04P10-E3SLASH54

TRANSZORB®TransientVoltageSuppressors

FEATURES •Glasspassivatedchipjunction •Availableinuni-directionalandbi-directional •400Wpeakpulsepowercapabilitywitha10/1000μswaveform,repetitiverate(dutycycle):0.01% •Excellentclampingcapability •Veryfastresponsetime •Lowincrementalsurgeresistance •

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
BZW04P10HE3/54

TRANSZORB®TransientVoltageSuppressors

FEATURES •Glasspassivatedchipjunction •Availableinuni-directionalandbi-directional •400Wpeakpulsepowercapabilitywitha10/1000μswaveform,repetitiverate(dutycycle):0.01 •Excellentclampingcapability •Veryfastresponsetime •Lowincrementalsurgeresistance •Sold

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
BZW04P10HE3SLASH54

TRANSZORB®TransientVoltageSuppressors

FEATURES •Glasspassivatedchipjunction •Availableinuni-directionalandbi-directional •400Wpeakpulsepowercapabilitywitha10/1000μswaveform,repetitiverate(dutycycle):0.01% •Excellentclampingcapability •Veryfastresponsetime •Lowincrementalsurgeresistance •

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
BZW04P102

GLASSPASSIVATEDJUNCTIONTRANSIENTVOLTAGESUPPRESSOR

文件：200.66 Kbytes Page：4 Pages

MDE

MDE Semiconductor, Inc.

MDE
BZW04P102

AXIALLEADEDTRANSIENTVOLTAGESUPPRESSORSDIODES

文件：509.04 Kbytes Page：4 Pages

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

SUNMATE
BZW04P102

TransZorbTransientVoltageSuppressors

文件：393.28 Kbytes Page：6 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
BZW04P102B

GLASSPASSIVATEDJUNCTIONTRANSIENTVOLTAGESUPPRESSOR

文件：200.66 Kbytes Page：4 Pages

MDE

MDE Semiconductor, Inc.

MDE
BZW04P10B

GLASSPASSIVATEDJUNCTIONTRANSIENTVOLTAGESUPPRESSOR

文件：200.66 Kbytes Page：4 Pages

MDE

MDE Semiconductor, Inc.

MDE
BZW04P10B

MINITYPELEDLAMPS

文件：293.43 Kbytes Page：1 Pages

DBLECTRODB Lectro Inc

迪贝电子

DBLECTRO
BZW04P10B-E3/73

封装/外壳：DO-204AL，DO-41，轴向 包装：带盒（TB） 描述：TVS DIODE 10.2VWM 16.7VC DO204AL 电路保护 TVS - 二极管

ETC

知名厂家

BZW04P10BHE3/54

封装/外壳：DO-204AL，DO-41，轴向 包装：卷带（TR） 描述：TVS DIODE 10.2VWM 16.7VC DO204AL 电路保护 TVS - 二极管

ETC

知名厂家

04P10P

P-Channel100V(D-S)MOSFET

文件：1.90761 Mbytes Page：9 Pages

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体（台湾）有限公司

VBSEMI
04P10PL

P-Channel100V(D-S)MOSFET

文件：1.90778 Mbytes Page：9 Pages

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体（台湾）有限公司

VBSEMI

BZW04P10产品属性

  • 类型

    描述

  • 型号

    BZW04P10

  • 制造商

    EIC

  • 制造商全称

    EIC discrete Semiconductors

  • 功能描述

    TRANSIENT VOLTAGE SUPPRESSOR

BZW04P10供应商更多...

更新时间：2025-8-2 17:32:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市盈慧通电子有限公司
BZW04P102
ST
2511
DO-41
16900
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价
询价
深圳市振宏微科技有限公司
BZW04P10-E3/54
VISHAYRoHS
23+
NA
6986
专做原装正品,假一罚百!
询价
深圳市一线半导体有限公司
BZW04P10
EIC
24+
6600
询价
深圳市赛特兴科技有限公司
BZW04P102
ST
23+
DO-41
16900
正规渠道,只有原装!
询价
深圳市创新迹电子有限公司
BZW04P10B
GENERALSEMIC
23+
原厂正规渠道
5000
专注配单,只做原装进口现货
询价
深圳市安富世纪电子有限公司
BZW04P10B
GENERALSEMIC
23+
原厂正规渠道
5000
专注配单,只做原装进口现货
询价
贸泽芯城（深圳）电子科技有限公司
BZW04P10
EIC
23+
2016
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
深圳市联世界科技有限公司
BZW04P10C337
STMICRO
24+/25+
800
原装正品现货库存价优
询价
深圳市利芯伟业科技有限公司
BZW04P102
ST
22+
DO-41
16900
支持样品,原装现货,提供技术支持!
询价
深圳市星佑电子有限公司
BZW04P136
ST
05+
原厂原装
8051
只做全新原装真实现货供应
询价

BZW04P10芯片相关品牌

  • ALPS
  • CRYSTEKCRYSTAL
  • Dallas
  • Hynix
  • MIC
  • MuRata
  • MURATA1
  • PERICOM
  • SAVANTIC
  • TAITRON
  • TECHPUBLIC
  • YEONHO

BZW04P10规格书下载地址

BZW04P10参数引脚图相关

BZW04P10数据表相关新闻

DdatasheetPDF页码索引

新数据|IC资料索引|IC关键词|IC库存|IC中文资料|关于我们|联系我们

Copyright © 2003-2025 www.114ic.cn All Rights Reserved 网站备案: 粤ICP备05011613号 粤公网安备 44030402000933号

声明：本站所有资料均来自互联网及网友提供，仅供学习和研究使用，无任何商业目的，版权归原作如有侵权请联系QQ：303638005，本站马上更正

字母索引：ABCDEFGHIJKLMNOPQRSTUVWXYZ0123456789

深圳市市场监督管理局企业主体身份公示