位置:首页 > IC中文资料第6243页 > FSJ160D
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
FSJ160D | 70A, 100V, 0.022 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul | INTERSIL | ||
70A, 100V, 0.022 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul | INTERSIL | |||
70A, 100V, 0.022 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul | INTERSIL | |||
70A, 100V, 0.022 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs | RENESAS 瑞萨 | |||
Axial Lead Rectifiers Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage, high–frequency invert | MOTOROLA 摩托罗拉 | |||
MOSFET BROADBAND RF POWER FET The RF MOSFET Line Power Field Effect Transistor N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver from 30–500 MHz. • Typical Performance at 400 MHz, 28 Vdc Output Power = 4.0 Watts Gain = 17 dB Efficiency = 50 • Excellent Thermal | MOTOROLA 摩托罗拉 | |||
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NEC Type RD2.0E to RD200E Series are planar type zener diode in the popular DO-35 package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW. To meet various application at customers, Vz (zener voltage) is classified into the tight tolerance und | NEC 瑞萨 | |||
MOSORB ZENER OVERVOLTAGE TRANSIENT SUPPRESSORS The SA5.0A series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. The SA5.0A series is supplied in Motorola’s exclusive, cost-effective, highly | MOTOROLA 摩托罗拉 | |||
POWER TRANSISTORS(10A,320-380V,125W)
| MOSPEC 统懋 |
FSJ160D产品属性
- 类型
描述
- 型号
FSJ160D
- 制造商
INTERSIL
- 制造商全称
Intersil Corporation
- 功能描述
70A, 100V, 0.022 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
FSJ160D规格书下载地址
FSJ160D参数引脚图相关
- ic采购
- IC(集成电路)
- hynix
- hy57v161610
- hs25
- hs20
- hl2608
- HDMI连接器
- HDD
- h3000
- h20r120
- gps模块
- gpib
- GL850G
- gfd
- g508
- g500
- g221
- fx57
- FTTH
- FSL130R
- FSL130D
- FSL13
- FSL127H
- FSL110R
- FSL110D
- FSK-S5
- FSK-S30
- FSK-S15
- FSK-S10
- FSK5X20
- FSJ9160
- FSJ4N65
- FSJ264R
- FSJ264D
- FSJ260R4
- FSJ260R3
- FSJ260R1
- FSJ260R
- FSJ260D3
- FSJ260D1
- FSJ260D
- FSJ163R4
- FSJ163R3
- FSJ163R1
- FSJ163R
- FSJ163D3
- FSJ163D1
- FSJ163D
- FSJ160R4
- FSJ160R3
- FSJ160R1
- FSJ160R
- FSJ160D3
- FSJ160D1
- FSJ1-50A
- FSJ055R4
- FSJ055R3
- FSJ055R1
- FSJ055R
- FSJ055D3
- FSJ055D1
- FSJ055D
- FSIR502Y
- FSIR502
- FSIR501Y
- FSIP904Y
- FSIP902Y
- FSIP901Y
- FSIP602Y
- FSIP601Y
- FSIP504Y
- FSIP502Y
- FSIDM90
- FSIDM-9
- FSIDM-7
- FSHPLC
- FSHH-X
- FSHD51E
- FSH4917
- FSH4913
- FSH41MF
- FSH41
- FSH40-X
- FSH10AR
- FSF893S
- FSF893D
- FSF892S
- FSF892D
- FSF853S
- FSF853D
- FSF852S
FSJ160D数据表相关新闻
FSEZ1317MY
FSEZ1317MY
2024-3-26FSM2JSMAATR
FSM2JSMAATR
2022-8-11FSGM0465RUDTU原装现货
FSGM0465RUDTU原装正品
2021-8-12FSMD005-1206-R1206自恢复保险丝
FSMD005-1206-R 1206自恢复保险丝
2019-11-16fsk433M射频模块csma/ca防冲突碰撞模块支持并发上报星状自组网
HP1812_GFSK_V1.0 我们公司自主研发的一款专业无线通讯模块,工作于 ISM433MHz 频段,具有高集成度、低功耗、小尺寸、高性能等优点,模块采用华普最新 CMT2300A 射频芯片,创新的采用高效的循环交织纠检错编码,抗干扰能力和灵敏度都大大提高,MAC 层数据传输使用 AES 加密以及硬件 CRC 校验,使其更加安全可靠。模块提供了
2019-4-2FSDL0165RL-绿色模式飞兆半导体功率开关(FPSTM)
说明 该FSDL0165RN是集成脉宽调制器(PWM)和检测场效应管专门设计的高性能离线开关电源(SMPS)与最少的外部元件。这个装置是一个集成高压电源开关稳压器结合了一雪崩与电流模式PWM的坚固感场效应管控制块。集成PWM控制器的功能包括:固定频率调制振荡器降低EMI,低电压锁定(UVLO)保护,前沿消隐(LEB),优化门turn-on/turnoff司机,热关机(TSD)的保护,异常过电流保护(AOCP)和温度补偿精密电流源的环路补偿和故障保护电路。相较于离散MOSFET和控制器或RCC开关转换器解决方案,FSDL0165RN降低总的元件数量
2013-3-11
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
- P104
- P105
- P106
- P107
- P108
- P109
- P110