型号 功能描述 生产厂家 企业 LOGO 操作
FQU1N50

500V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

FAIRCHILD

仙童半导体

FQU1N50

500V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

FAIRCHILD

仙童半导体

FQU1N50

500V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

FAIRCHILD

仙童半导体

500V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

FAIRCHILD

仙童半导体

MOSFET N-CH 500V 1.1A IPAK

ONSEMI

安森美半导体

Drain Current ID= 1.2A@ TC=25C

•FEATURES •Drain Current ID= 1.2A@ TC=25℃ •Drain Source Voltage- : VDSS= 500V(Min) •Static Drain-Source On-Resistance : RDS(on) = 5.5Ω(Max) •Fast Switching •APPLICATIONS •Switch mode power supply.

ISC

无锡固电

N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

DESCRIPTION The UTC 1N50A is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanch

UTC

友顺

1.3A, 500V N-CHANNEL POWER MOSFET

文件:177.99 Kbytes Page:6 Pages

UTC

友顺

1.3 Amps, 500 Volts N-CHANNEL POWER MOSFET

文件:169.79 Kbytes Page:6 Pages

UTC

友顺

GOLD BONDED GERMANIUM DIODE

文件:43.32 Kbytes Page:1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

FQU1N50产品属性

  • 类型

    描述

  • 型号

    FQU1N50

  • 制造商

    FAIRCHILD

  • 制造商全称

    Fairchild Semiconductor

  • 功能描述

    500V N-Channel MOSFET

更新时间:2026-3-12 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
onsemi(安森美)
25+
IPAK
18798
正规渠道,免费送样。支持账期,BOM一站式配齐
onsemi(安森美)
25+
IPAK
18798
正规渠道,免费送样。支持账期,BOM一站式配齐
FAIRCHILD/仙童
2026+
I-PAKTO-251
54558
百分百原装现货 实单必成 欢迎询价
FAIRCHILD/仙童
25+
TO-251
45000
FAIRCHILD/仙童全新现货FQU1N50/B即刻询购立享优惠#长期有排单订
FAIRCHILD
26+
Sot-143
86720
全新原装正品价格最实惠 假一赔百
FAIRCHILD/仙童
21+
I-PAKTO-251
30000
优势供应 实单必成 可13点增值税
FAIRC
2023+
TO-251(IPAK)
50000
原装现货
FAIRCHILD
24+
TO-251(IPAK)
8866
仙童
05+
TO-251
5000
原装进口
FAIRCHILD/仙童
23+
I-PAKTO-251
24190
原装正品代理渠道价格优势

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