PowerMOS transistor Isolated version fo PHP1N50E

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a full pack, plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Pow

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 1.4A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 5.0Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

PowerMOS transistor Isolated version fo PHP1N50E

Drain Current ID= 1.2A@ TC=25C

•FEATURES •Drain Current ID= 1.2A@ TC=25℃ •Drain Source Voltage- : VDSS= 500V(Min) •Static Drain-Source On-Resistance : RDS(on) = 5.5Ω(Max) •Fast Switching •APPLICATIONS •Switch mode power supply.

N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

DESCRIPTION The UTC 1N50A is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanch

1.3A, 500V N-CHANNEL POWER MOSFET

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1.3 Amps, 500 Volts N-CHANNEL POWER MOSFET

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GOLD BONDED GERMANIUM DIODE

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