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型号 功能描述 生产厂家 企业 LOGO 操作
MTD1N50E

TMOS POWER FET 1.0 AMPERE 500 VOLTS RDS(on) = 5.0 OHM

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition this advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design al

MOTOROLA

摩托罗拉

MTD1N50E

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 1A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conve

ISC

无锡固电

MTD1N50E

N-Channel 650 V (D-S) MOSFET

文件:1.08605 Mbytes Page:9 Pages

VBSEMI

微碧半导体

MTD1N50E

N?묬hannel Power MOSFET

文件:136.06 Kbytes Page:12 Pages

ONSEMI

安森美半导体

MTD1N50E

N−Channel Power MOSFET

ONSEMI

安森美半导体

MTD1N50E

TMOS POWER FET 1.0 AMPERE 500 VOLTS RDS(on) = 5.0 OHM

ETC

知名厂家

N?묬hannel Power MOSFET

文件:136.06 Kbytes Page:12 Pages

ONSEMI

安森美半导体

N?묬hannel Power MOSFET

文件:136.06 Kbytes Page:12 Pages

ONSEMI

安森美半导体

N-Channel 650 V (D-S) MOSFET

文件:1.08609 Mbytes Page:9 Pages

VBSEMI

微碧半导体

TMOS POWER FET 1.0 AMPERES 500 VOLTS RDS(on) = 5.0 OHM

TMOS E−FET Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand hi

MOTOROLA

摩托罗拉

PowerMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Power Supplies

PHILIPS

飞利浦

PowerMOS transistor Isolated version fo PHP1N50E

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a full pack, plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Pow

PHILIPS

飞利浦

520V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

FAIRCHILD

仙童半导体

更新时间:2026-5-18 13:55:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
MOT
23+
SOT252
20000
全新原装假一赔十
VBSEMI/台湾微碧
25+
DPAK
90000
全新原装现货
ON
24+
30000
ON
23+
TO-251
11846
一级代理商现货批发,原装正品,假一罚十
ON/安森美
23+
15238
原厂授权一级代理,专业海外优势订货,价格优势、品种
ON
20+
TO-252
38900
原装优势主营型号-可开原型号增税票
ON
12+
TO-252(DPAK)
15000
全新原装,绝对正品,公司现货供应。
ON/安森美
2447
SOT252
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
ON/安森美
23+
SOT252
8000
只做原装现货
VBSEMI/台湾微碧
23+
DPAK
50000
全新原装正品现货,支持订货

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