TMOS POWER FET 1.0 AMPERES 500 VOLTS RDS(on) = 5.0 OHM

TMOS E−FET Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand hi

N?묬hannel TO??20 Power MOSFET

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TMOS POWER FET 1.0 AMPERES 500 VOLTS RDS(on) = 5.0 OHM

N−Channel TO−220 Power MOSFET

Drain Current ID= 1.2A@ TC=25C

•FEATURES •Drain Current ID= 1.2A@ TC=25℃ •Drain Source Voltage- : VDSS= 500V(Min) •Static Drain-Source On-Resistance : RDS(on) = 5.5Ω(Max) •Fast Switching •APPLICATIONS •Switch mode power supply.

N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

DESCRIPTION The UTC 1N50A is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanch

1.3A, 500V N-CHANNEL POWER MOSFET

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1.3 Amps, 500 Volts N-CHANNEL POWER MOSFET

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GOLD BONDED GERMANIUM DIODE

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