800V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and w

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=8A@ TC=25℃ ·Drain Source Voltage -VDSS=800V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.55Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

Power MOSFET, N-Channel, QFET®, 800 V, 8 A, 1.55 Ω, TO-220F

800V N-Channel MOSFET

文件：1.29641 Mbytes Page：10 Pages

800V N-Channel MOSFET

文件：1.28564 Mbytes Page：12 Pages

800V N-Channel MOSFET

文件：1.28564 Mbytes Page：12 Pages

800V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology hasbeen especially tailored to minimize on-state resistance, provide superior switching performance, and withstand

800V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS