N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 8.2A@ TC=25℃ ·Drain Source Voltage -VDSS= 800V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.2Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

800V N-CHANNEL MOSFET

DESCRIPTION The UTC8N80 is an N-channel mode Power FET, it uses UTC’s advanced technology to provide costumers planar stripe and DMOS technology. This technology allows a minimum on-state resistance, superior switching performance. It also can withstand high energy pulse in the avalanche and co

Drain Current ?밒D= 8A@ TC=25C

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8A 800V N-channel Enhancement Mode Power MOSFET

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8A 800V N-channel Enhancement Mode Power MOSFET

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8A 800V N-channel Enhancement Mode Power MOSFET

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