800V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 5.9A@ TC=25℃ ·Drain Source Voltage- : VDSS=800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.2Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

800V N-Channel MOSFET

800V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology hasbeen especially tailored to minimize on-state resistance, provide superior switching performance, and withstand

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS