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FQD2N90价格
参考价格：￥2.6922
型号：FQD2N90TM 品牌：Fairchild 备注：这里有FQD2N90多少钱，2026年最近7天走势，今日出价，今日竞价，FQD2N90批发/采购报价，FQD2N90行情走势销售排行榜，FQD2N90报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
FQD2N90 | 900V N-Channel MOSFET Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av | FAIRCHILD 仙童半导体 |   | |
FQD2N90 | N-Channel QFET짰 MOSFET Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av | FAIRCHILD 仙童半导体 | | |
FQD2N90 | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID=1.7A@ TC=25℃ ·Drain Source Voltage -VDSS=900V(Min) ·Static Drain-Source On-Resistance -RDS(on) =7.2Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | |
FQD2N90 | 功率 MOSFET，N 沟道，QFET®，900 V，1.7 A，7.2 Ω，DPAK | ONSEMI 安森美半导体 | | |
FQD2N90 | N-Channel QFET짰 MOSFET 900 V, 1.7 A, 7.2 廓 文件：1.29789 Mbytes Page：9 Pages | FAIRCHILD 仙童半导体 | | |
N-Channel QFET짰 MOSFET Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av | FAIRCHILD 仙童半导体 | | ||
900V N-Channel MOSFET 文件：847.5 Kbytes Page：9 Pages | FAIRCHILD 仙童半导体 | | ||
N-Channel QFET짰 MOSFET 900 V, 1.7 A, 7.2 廓 文件：1.29789 Mbytes Page：9 Pages | FAIRCHILD 仙童半导体 | | ||
900V N-Channel MOSFET Features • 2.2 A, 900V, RDS(on) = 7.2 Ω @VGS = 10 V • Low gate charge ( typical 12 nC) • Low Crss ( typical 5.5 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability | FAIRCHILD 仙童半导体 | | ||
900V N-Channel MOSFET Features • 2.2 A, 900V, RDS(on) = 7.2 Ω @VGS = 10 V • Low gate charge ( typical 12 nC) • Low Crss ( typical 5.5 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability | FAIRCHILD 仙童半导体 | | ||
900V N-Channel MOSFET Features • 1.4A, 900V, RDS(on) = 7.2Ω @ VGS =10V • Low gate charge (typical 12 nC) • Low Crss (typical 5.5 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability | FAIRCHILD 仙童半导体 | | ||
900V N-Channel MOSFET Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av | FAIRCHILD 仙童半导体 | |
FQD2N90产品属性
- 类型
描述
- 型号
FQD2N90
- 功能描述
MOSFET 900V N-Channel QFET
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ONSEMI |
25+ |
DPAK |
18798 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
FAIRCHILD/仙童 |
25+ |
TO-252 |
45000 |
FAIRCHILD/仙童全新现货FQD2N90C即刻询购立享优惠#长期有排单订 |
|||
FAIRCHILD/仙童 |
2026+ |
SOT-252 |
5000 |
原装正品,假一罚十! |
|||
FAIRCHILD |
10+ |
SOT-252 |
350 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ON(安森美) |
23+ |
D-PAK |
9859 |
公司只做原装正品,假一赔十 |
|||
ON |
25+ |
原装优势现货 |
7500 |
原装优势现货 |
|||
ONSEMI/安森美 |
24+ |
D-PAK |
6950 |
原装现货挂了就有看到就来问 |
|||
50 |
252 |
FAIRCHILD/仙童 |
11 |
92 |
|||
FAIRCHILD/仙童 |
25+ |
TO-252 |
30000 |
全新原装现货,价格优势 |
|||
FAIRCHILD/仙童 |
2450+ |
TO-252 |
9850 |
只做原装正品现货或订货假一赔十! |
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