900V N-Channel MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

N-Channel QFET짰 MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=1.7A@ TC=25℃ ·Drain Source Voltage -VDSS=900V(Min) ·Static Drain-Source On-Resistance -RDS(on) =7.2Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N 沟道 QFET® MOSFET 900V，1.7A，7.2Ω

该 N 沟道增强型功率 MOSFET 产品采用飞兆半导体的专有平面条形和 DMOS 技术生产。这种先进的 MOSFET 技术已专门定制用来降低导通电阻，并提供卓越的开关性能和较高的雪崩能量强度。这些器件适用于开关电源、有源功率因数校正（PFC）及照明灯电子镇流器。 •1.7A, 900V, RDS(on)= 7.2Ω（最大值）@VGS = 10 V, ID = 0.85A栅极电荷低（典型值：12nC)\n•低 Crss（典型值5.5pF)\n•100% 经过雪崩击穿测试\n•符合 RoHS 标准\n•RoHS compliant;

N-Channel QFET짰 MOSFET 900 V, 1.7 A, 7.2 廓

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Power MOSFET, N-Channel, QFET®, 900 V, 1.7 A, 7.2 Ω, IPAK

该 N 沟道增强型功率 MOSFET 产品采用飞兆半导体的专有平面条形和 DMOS 技术生产。这种先进的 MOSFET 技术已专门定制用来降低导通电阻，并提供卓越的开关性能和较高的雪崩能量强度。这些器件适用于开关电源、有源功率因数校正（PFC）及照明灯电子镇流器。 •1.7A, 900V, RDS(on)= 7.2Ω（最大值）@VGS = 10 V, ID = 0.85A栅极电荷低（典型值：12nC)\n•低 Crss（典型值5.5pF)\n•100% 经过雪崩击穿测试\n•符合 RoHS 标准\n•RoHS compliant;

N 沟道 QFET® MOSFET 900V，1.7A，7.2Ω

该 N 沟道增强型功率 MOSFET 产品采用飞兆半导体的专有平面条形和 DMOS 技术生产。这种先进的 MOSFET 技术已专门定制用来降低导通电阻，并提供卓越的开关性能和较高的雪崩能量强度。这些器件适用于开关电源、有源功率因数校正（PFC）及照明灯电子镇流器。 •1.7A, 900V, RDS(on)= 7.2Ω（最大值）@VGS = 10 V, ID = 0.85A栅极电荷低（典型值：12nC)\n•低 Crss（典型值5.5pF)\n•100% 经过雪崩击穿测试\n•符合 RoHS 标准\n•RoHS compliant;

900V N-Channel MOSFET

Features • 2.2 A, 900V, RDS(on) = 7.2 Ω @VGS = 10 V • Low gate charge ( typical 12 nC) • Low Crss ( typical 5.5 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability

900V N-Channel MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

900V N-Channel MOSFET

Features • 2.2 A, 900V, RDS(on) = 7.2 Ω @VGS = 10 V • Low gate charge ( typical 12 nC) • Low Crss ( typical 5.5 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability

900V N-Channel MOSFET

Features • 1.4A, 900V, RDS(on) = 7.2Ω @ VGS =10V • Low gate charge (typical 12 nC) • Low Crss (typical 5.5 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability