900V N-Channel MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

N-Channel QFET짰 MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=1.7A@ TC=25℃ ·Drain Source Voltage -VDSS=900V(Min) ·Static Drain-Source On-Resistance -RDS(on) =7.2Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N 沟道 QFET® MOSFET 900V，1.7A，7.2Ω

N-Channel QFET짰 MOSFET 900 V, 1.7 A, 7.2 廓

文件：1.29789 Mbytes Page：9 Pages

Power MOSFET, N-Channel, QFET®, 900 V, 1.7 A, 7.2 Ω, IPAK

N 沟道 QFET® MOSFET 900V，1.7A，7.2Ω

Drain Current ID= 2A@ TC=25C

文件：68.03 Kbytes Page：2 Pages

2A, 900V N-CHANNEL POWER MOSFET

文件：203.7 Kbytes Page：6 Pages

2 Amps, 900 Volts N-CHANNEL POWER MOSFET

文件：186.37 Kbytes Page：6 Pages

N-CHANNEL POWER MOSFET

文件：271.07 Kbytes Page：7 Pages

N-CHANNEL POWER MOSFET

文件：271.07 Kbytes Page：7 Pages