900V N-Channel MOSFET

Features • 2.2 A, 900V, RDS(on) = 7.2 Ω @VGS = 10 V • Low gate charge ( typical 12 nC) • Low Crss ( typical 5.5 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability

900V N-Channel MOSFET

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MOSFET N-CH 900V 2.2A I2PAK

900V N-Channel MOSFET

Features • 2.2 A, 900V, RDS(on) = 7.2 Ω @VGS = 10 V • Low gate charge ( typical 12 nC) • Low Crss ( typical 5.5 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability

900V N-Channel MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

900V N-Channel MOSFET

Features • 1.4A, 900V, RDS(on) = 7.2Ω @ VGS =10V • Low gate charge (typical 12 nC) • Low Crss (typical 5.5 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability

900V N-Channel MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av