isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=7.6A@ TC=25℃ ·Drain Source Voltage -VDSS=200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.36Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

200V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. Features • 7.8 A,200 V, RDS(on) = 0.36Ω (Max.)@ VGS = 10 V • Low Gate Charge (Typ. 13.5 nC) • Low Crss (Typ. 13pF)

200V LOGIC N-Channel MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high

200V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. Features • 7.8 A,200 V, RDS(on) = 360 mΩ (Max.)@ VGS = 10 V, ID= 3.9 A • Low Gate Charge (Typ. 20 nC) • Low Crss (Typ

N-Channel QFET MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. Features • 7.8 A,200 V, RDS(on) = 360 mΩ (Max.)@ VGS = 10 V, ID= 3.9 A • Low Gate Charge (Typ. 20 nC) • Low Crss (Typ

N-Channel QFET MOSFET 200 V, 7.8 A, 360 mOhm

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. Features • 7.8 A,200 V, RDS(on) = 360 mΩ (Max.)@ VGS = 10 V, ID= 3.9 A • Low Gate Charge (Typ. 20 nC) • Low Crss (Typ

N-channel Enhancement Mode Power MOSFET

Features  VDS= 200 V, ID= 8 A RDS(ON)

N-Channel QFET MOSFET 200 V, 7.8 A, 360 mOhm

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. Features • 7.8 A,200 V, RDS(on) = 360 mΩ (Max.)@ VGS = 10 V, ID= 3.9 A • Low Gate Charge (Typ. 20 nC) • Low Crss (Typ

200V LOGIC N-Channel MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high

N-Channel QFET짰 MOSFET 200 V, 7.6 A, 360 m廓

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high

N-channel Enhancement Mode Power MOSFET

Features  VDS= 200 V, ID= 8 A RDS(ON)

N-Channel QFET짰 MOSFET 200 V, 7.6 A, 360 m廓

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high

200V N-Channel MOSFET

文件：729.18 Kbytes Page：9 Pages

isc N-Channel MOSFET Transistor

文件：347.24 Kbytes Page：2 Pages

200V N-Channel MOSFET

文件：729.18 Kbytes Page：9 Pages

N-Channel QFET MOSFET 200 V, 7.6 A, 360 m

文件：765.77 Kbytes Page：8 Pages

N-Channel QFET MOSFET

文件：937.15 Kbytes Page：9 Pages

N-Channel 200 V (D-S) MOSFET

文件：1.01018 Mbytes Page：7 Pages

N-Channel QFET MOSFET

文件：937.15 Kbytes Page：9 Pages

N-Channel QFET MOSFET 200 V, 7.6 A, 360 m

文件：765.77 Kbytes Page：8 Pages

N-Channel 200 V (D-S) MOSFET

文件：1.01011 Mbytes Page：7 Pages

200V N-Channel MOSFET

文件：788.66 Kbytes Page：9 Pages

200V N-Channel MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high

HIGH POWER 125W HIGH QUALITY AUDIO AMPLIFIER APPLICATIONS

[EXICON] N AND P CHANNEL LAERAL MOSFETS

Uninterruptible Power Supply

Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable f

N-Channel 200 V (D-S) MOSFET

文件：1.6556 Mbytes Page：7 Pages

N CHANNEL LATERAL MOSFET

文件：400.4 Kbytes Page：4 Pages