FQD10N20资料使用说明书现货供应价格Fairchild-IC资料网

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FQD10N20价格

参考价格：￥1.3797

型号：FQD10N20CTM 品牌：Fairchild 备注：这里有FQD10N20多少钱，2025年最近7天走势，今日出价，今日竞价，FQD10N20批发/采购报价，FQD10N20行情走势销售排行榜，FQD10N20报价。

型号	功能描述	生产厂家企业	LOGO
FQD10N20	200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. Features • 7.8 A,200 V, RDS(on) = 0.36Ω (Max.)@ VGS = 10 V • Low Gate Charge (Typ. 13.5 nC) • Low Crss (Typ. 13pF)	Fairchild 仙童半导体	Fairchild
FQD10N20	200V LOGIC N-Channel MOSFET Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high	Fairchild 仙童半导体	Fairchild
FQD10N20	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID=7.6A@ TC=25℃ ·Drain Source Voltage -VDSS=200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.36Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
FQD10N20C	200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. Features • 7.8 A,200 V, RDS(on) = 360 mΩ (Max.)@ VGS = 10 V, ID= 3.9 A • Low Gate Charge (Typ. 20 nC) • Low Crss (Typ	Fairchild 仙童半导体	Fairchild
FQD10N20C	N-Channel QFET MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. Features • 7.8 A,200 V, RDS(on) = 360 mΩ (Max.)@ VGS = 10 V, ID= 3.9 A • Low Gate Charge (Typ. 20 nC) • Low Crss (Typ	Fairchild 仙童半导体	Fairchild
FQD10N20C	N-Channel QFET MOSFET 200 V, 7.8 A, 360 mOhm General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. Features • 7.8 A,200 V, RDS(on) = 360 mΩ (Max.)@ VGS = 10 V, ID= 3.9 A • Low Gate Charge (Typ. 20 nC) • Low Crss (Typ	Fairchild 仙童半导体	Fairchild
FQD10N20CTM	N-Channel QFET MOSFET 200 V, 7.8 A, 360 mOhm General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. Features • 7.8 A,200 V, RDS(on) = 360 mΩ (Max.)@ VGS = 10 V, ID= 3.9 A • Low Gate Charge (Typ. 20 nC) • Low Crss (Typ	Fairchild 仙童半导体	Fairchild
FQD10N20CTM	N-channel Enhancement Mode Power MOSFET Features  VDS= 200 V, ID= 8 A RDS(ON)	Bychip 百域芯	Bychip
FQD10N20L	N-Channel QFET짰 MOSFET 200 V, 7.6 A, 360 m廓 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high	Fairchild 仙童半导体	Fairchild
FQD10N20L	200V LOGIC N-Channel MOSFET Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high	Fairchild 仙童半导体	Fairchild
FQD10N20LTM	N-Channel QFET짰 MOSFET 200 V, 7.6 A, 360 m廓 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high	Fairchild 仙童半导体	Fairchild
FQD10N20LTM	N-channel Enhancement Mode Power MOSFET Features  VDS= 200 V, ID= 8 A RDS(ON)	Bychip 百域芯	Bychip
FQD10N20C	isc N-Channel MOSFET Transistor 文件：347.24 Kbytes Page：2 Pages	ISC 无锡固电	ISC
FQD10N20C	200V N-Channel MOSFET 文件：729.18 Kbytes Page：9 Pages	Fairchild 仙童半导体	Fairchild
FQD10N20C_09	200V N-Channel MOSFET 文件：729.18 Kbytes Page：9 Pages	Fairchild 仙童半导体	Fairchild
FQD10N20L	N-Channel 200 V (D-S) MOSFET 文件：1.01018 Mbytes Page：7 Pages	VBSEMI 微碧半导体	VBSEMI
FQD10N20L	功率 MOSFET，N 沟道，逻辑电平，QFET®，200 V，7.6 A，380 mΩ，DPAK	ONSEMI 安森美半导体	ONSEMI
FQD10N20L	N-Channel QFET MOSFET 200 V, 7.6 A, 360 m 文件：765.77 Kbytes Page：8 Pages	Fairchild 仙童半导体	Fairchild
FQD10N20L	N-Channel QFET MOSFET 文件：937.15 Kbytes Page：9 Pages	Fairchild 仙童半导体	Fairchild
FQD10N20L_13	N-Channel QFET MOSFET 文件：937.15 Kbytes Page：9 Pages	Fairchild 仙童半导体	Fairchild
FQD10N20LTF	N-Channel QFET MOSFET 200 V, 7.6 A, 360 m 文件：765.77 Kbytes Page：8 Pages	Fairchild 仙童半导体	Fairchild
FQD10N20LTM	N-Channel 200 V (D-S) MOSFET 文件：1.01011 Mbytes Page：7 Pages	VBSEMI 微碧半导体	VBSEMI
FQD10N20TF	MOSFET N-CH 200V 7.6A DPAK	ONSEMI 安森美半导体	ONSEMI
FQD10N20TM	MOSFET N-CH 200V 7.6A DPAK	ONSEMI 安森美半导体	ONSEMI
FQD10N20TM	200V N-Channel MOSFET 文件：788.66 Kbytes Page：9 Pages	Fairchild 仙童半导体	Fairchild
10N20C	200V N-Channel MOSFET Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high	Fairchild 仙童半导体	Fairchild
EC-10N20	HIGH POWER 125W HIGH QUALITY AUDIO AMPLIFIER APPLICATIONS [EXICON] N AND P CHANNEL LAERAL MOSFETS	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
FDD10N20LZ	Uninterruptible Power Supply Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable f	Fairchild 仙童半导体	Fairchild
10N20	N-Channel 200 V (D-S) MOSFET 文件：1.6556 Mbytes Page：7 Pages	VBSEMI 微碧半导体	VBSEMI
ECX10N20	N CHANNEL LATERAL MOSFET 文件：400.4 Kbytes Page：4 Pages	ETCList of Unclassifed Manufacturers 未分类制造商	ETC

FQD10N20产品属性

类型
描述
型号
FQD10N20
制造商
FAIRCHILD
制造商全称
Fairchild Semiconductor
功能描述
200V N-Channel MOSFET

FQD10N20供应商更多...

更新时间：2025-12-27 22:58:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市凌旭科技有限公司	FQD10N20C	FSC	2016+	TO252	2811	只做原装,假一罚十,公司可开17%增值税发票!	询价
深圳市科芯源微电子有限公司	FQD10N20	FAIRCHILD/仙童	25+	TO-252	12535	原装正品,假一罚十!	询价
深圳市讯顺达科技有限公司	FQD10N20CTM	ON	21+	TO-252	30000	全新原装公司现货	询价
深圳市得捷芯城科技有限公司	FQD10N20CTM	ON(安森美)	24+	D-PAK	34048	原厂可订货,技术支持,直接渠道。可签保供合同	询价
深圳市华斯顿科技有限公司	FQD10N20C	FSC	25+23+	TO-252	31533	绝对原装正品全新进口深圳现货	询价
中天科工半导体（深圳）有限公司	FQD10N20CTM	ON/安森美	25+	TO-252	32360	ON/安森美全新特价FQD10N20CTM即刻询购立享优惠#长期有货	询价
深圳市胜彬电子有限公司	FQD10N20	FAIRCILD	22+	TO-252	8000	原装正品支持实单	询价
深圳市一线半导体有限公司	FQD10N20	FAIRCHILD	24+	SOT-252	109000		询价
深圳市科恒伟业电子有限公司	FQD10N20LTF	FAILCHILD	ROHS	5632	2015	只做进口原装正品!现货或者订货一周货期!只要要网上	询价
深圳市宇集芯电子有限公司	FQD10N20	FAIRC	24+	TO-252	90000	一级代理商进口原装现货、价格合理	询价

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FQD10N20价格

FQD10N20产品属性

FQD10N20供应商更多...

FQD10N20芯片相关品牌

FQD10N20规格书下载地址

FQD10N20参数引脚图相关

FQD10N20数据表相关新闻

FQB34P10TM坚持十多年只为原装

FQB55N10TM

FQD10N20CTM

FQD17P06TM 原厂原装正品MOSFET 60V P-Channel QFET

FQA9N90C

FQD16N25C

DdatasheetPDF页码索引