N-Channel QFET짰 MOSFET 200 V, 7.6 A, 360 m廓

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high

N-channel Enhancement Mode Power MOSFET

Features  VDS= 200 V, ID= 8 A RDS(ON)

N-Channel 200 V (D-S) MOSFET

文件：1.01011 Mbytes Page：7 Pages

200V N-Channel MOSFET

200V LOGIC N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand h

200V LOGIC N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand h

200V N-Channel MOSFET

Description This N-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s proprietary planar stripe, DMOS technology. Features • 6.8 A, 200 V, RDS(on)= 0.36 Ω(Max.) @ VGS= 10 V • Low Gate Charge (Typ. 13.5 nC) • Low Crss (Typ. 13 pF)

200V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. Features • 7.8 A,200 V, RDS(on) = 0.36Ω (Max.)@ VGS = 10 V • Low Gate Charge (Typ. 13.5 nC) • Low Crss (Typ. 13pF)