Uninterruptible Power Supply

Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable f

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=7.6A@ TC=25℃ ·Drain Source Voltage : VDSS=200V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.36Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

功率 MOSFET，N 沟道，逻辑电平，UniFETTM，200 V，7.6 A，360 mΩ，DPAK

N-channel Enhancement Mode Power MOSFET

Features  VDS= 200 V, ID= 8 A RDS(ON)

Uninterruptible Power Supply

Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable f

200V N-Channel MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high

HIGH POWER 125W HIGH QUALITY AUDIO AMPLIFIER APPLICATIONS

[EXICON] N AND P CHANNEL LAERAL MOSFETS

N-Channel 200 V (D-S) MOSFET

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N CHANNEL LATERAL MOSFET

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