型号 功能描述 生产厂家 企业 LOGO 操作
FMV06N60ES

N-CHANNEL SILICON POWER MOSFET

Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.7±0.5V) High avalanche durability Applica

Fuji

富士通

FMV06N60ES

功率MOSFET 600V-700V

Fuji

富士通

N-CHANNEL SILICON POWER MOSFET

Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability Applica

Fuji

富士通

Power filed Effect Transistor

FEATURES ◆ Robust High Voltage Termination ◆ Avalanche Energy Specified ◆ Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode ◆ Diode is Characterized for Use in Bridge Circuits ◆ IDSS and VDS(on) Specified at Elevated Temperature

JIANGSU

长电科技

IGBT with integrated diode in packages offering space saving advantage

文件:1.92413 Mbytes Page:16 Pages

Infineon

英飞凌

IGBT with integrated diode in packages offering space saving advantage

文件:1.74081 Mbytes Page:16 Pages

Infineon

英飞凌

POWER FIELD EFFECT TRANSISTOR

文件:191.5 Kbytes Page:6 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

FMV06N60ES产品属性

  • 类型

    描述

  • 型号

    FMV06N60ES

  • 制造商

    FUJI

  • 制造商全称

    Fuji Electric

  • 功能描述

    N-CHANNEL SILICON POWER MOSFET

更新时间:2025-12-28 8:08:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
FUJITSU/富士通
24+
TO-220F
25540
郑重承诺只做原装进口现货
FUJITSU/富士通
24+
NA/
100
优势代理渠道,原装正品,可全系列订货开增值税票
FUJI/富士电机
23+
N/A
11550
FUJI/富士电机系列在售
23+
NA
3000
专做原装正品,假一罚百!
FUJ
25+23+
TO-220F
26929
绝对原装正品全新进口深圳现货
FUJITSU/富士通
24+
TO-220F
7800
全新原厂原装正品现货,低价出售,实单可谈
ADI/亚德诺
23+
MSOP8
69820
终端可以免费供样,支持BOM配单!
FUJITSU/富士通
23+
TO-220F
223999
原厂授权一级代理,专业海外优势订货,价格优势、品种
FUJI/富士电机
23+
N/A
9000
专业配单,原装正品假一罚十,代理渠道价格优
FUJI
11+
TO-220F
1454
一级代理,专注军工、汽车、医疗、工业、新能源、电力

FMV06N60ES数据表相关新闻