600 V，3 A，短路额定 IGBT

飞兆半导体的 NPT IGBT 采用的是先进的 NPT IGBT 技术，为具有低损耗和短路耐用性特征的低功率逆变器驱动应用提供最优性能。 •短路承受额定 10us\n•高电流能力\n•高输入阻抗\n•快速开关\n•符合RoHS标准;

Using advanced NPT IGBT technology, Fairchild짰?셲 the NPT vIGBTs offer the optimum performance for low-power inverterdriven applications where low-losses and short-circuit ruggedness features are essential.

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TMOS POWER FET 3.0 AMPERES 600 VOLTS

TheD2PAK package has the capability of housing a larger die thanany existing surface mount package which allows it to be used inapplications that require theuse of surface mount components withhigher power and lower RDS(on)capabilities. This high voltage MOSFETuses an advanced termination scheme

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 2 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100oC ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITCH MODE POWER SUPPLIES (SMPS) ■

PowerMOS transistors Avalanche energy rated

GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHP3N60E is supp

TMOS POWER FET 3.0 AMPERES 600 VOLTS RDS(on) = 2.2 OHMS

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PowerMOS transistors Avalanche energy rated

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