| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
3N60 | 3 Amps, 600/650 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N60 is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching app | UTC 友顺 |   | |
3N60 | N-CHANNEL POWER MOSFET DESCRIPTION 3N60 3N65 is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applic | ZSELEC 淄博圣诺 | | |
3N60 | 3A, 600V N-CHANNEL POWER MOSFET The UTC 3N60 is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in po • VDS = 600V, ID = 3A \n• Ultra low gate charge ( typical 10 nC ) \n• Fast switching capability \n• Improved dv/dt capability, high ruggedness; | UTC 友顺 | | |
3N60 | 600V N-Channel Power MOSFET 文件：2.13901 Mbytes Page：8 Pages | DYELEC 迪一电子 | | |
3N60 | N-Channel Power MOSFET 文件：442.29 Kbytes Page：9 Pages | NELLSEMI 尼尔半导体 | | |
3N60 | Fast Switching 文件：49.9 Kbytes Page：2 Pages | ISC 无锡固电 | | |
3N60 | N-Channel 650 V (D-S) MOSFET 文件：1.08665 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | |
3N60 | 3A, 600V N-CHANNEL POWER MOSFET 文件：388.87 Kbytes Page：8 Pages | UTC 友顺 | | |
3N60 | N-CHANNEL POWER MOSFET 文件：2.15912 Mbytes Page：7 Pages | SUNMATE 森美特 | | |
3N60 | 3 Amps, 600/650 Volts N-CHANNEL POWER MOSFET 文件：363.66 Kbytes Page：8 Pages | UTC 友顺 | | |
3N60 | 3A, 600V N-CHANNEL POWER MOSFET 文件：388.87 Kbytes Page：8 Pages | UTC 友顺 | | |
3A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N60A is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used in the high speed switching app | UTC 友顺 | | ||
600V, SMPS Series N-Channel IGBT The HGTD3N60A4S and the HGTP3N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on state voltage drop | FAIRCHILD 仙童半导体 | | ||
600V, SMPS Series N-Channel IGBT The HGTD3N60A4S, HGT1S3N60A4S and the HGTP3N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-stat | INTERSIL | | ||
3A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N60A is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used in the high speed switching app | UTC 友顺 | | ||
3A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N60A is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used in the high speed switching app | UTC 友顺 | | ||
3A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N60A is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used in the high speed switching app | UTC 友顺 | | ||
3A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N60A is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used in the high speed switching app | UTC 友顺 | | ||
3A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N60A is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used in the high speed switching app | UTC 友顺 | | ||
3A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N60A is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used in the high speed switching app | UTC 友顺 | | ||
3 Amps, 600/650 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N60 is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching app | UTC 友顺 | | ||
3 Amps, 600/650 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N60 is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching app | UTC 友顺 | | ||
3A, 600V N-CHANNEL POWER MOSFET The UTC 3N60-HC is a high voltage power MOSFET designedto have better characteristics, such as fast switching time, low gatecharge, low on-state resistance and high rugged avalanchecharacteristics. This power MOSFET is usually used in high speedswitching applications of switching power supplies and RDS(ON) < 3.7 Ω @ VGS=10V, ID=1.5A Fast switching capability Avalanche energy tested Improved dv/dt capability, high ruggedness; | UTC 友顺 | | ||
3A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N60K is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching | UTC 友顺 | | ||
3A, 600V N-CHANNEL POWER MOSFET The UTC 3N60K is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in p • VDS = 600V, ID = 3A \n• Ultra low gate charge ( typical 10 nC ) \n• Fast switching capability \n• Improved dv/dt capability, high ruggedness; | UTC 友顺 | | ||
3A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N60K is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching | UTC 友顺 | | ||
3A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N60K is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching | UTC 友顺 | | ||
3A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N60K is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching | UTC 友顺 | | ||
3A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N60K is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching | UTC 友顺 | | ||
3A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N60K is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching | UTC 友顺 | | ||
3A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N60K is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching | UTC 友顺 | | ||
3 Amps, 600/650 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N60 is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching app | UTC 友顺 | | ||
3 Amps, 600/650 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N60 is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching app | UTC 友顺 | | ||
3.0A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N60-LC is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of swit | UTC 友顺 | | ||
3.0A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N60-LC is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of swit | UTC 友顺 | | ||
3.0A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N60-LC is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of swit | UTC 友顺 | | ||
3.0A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N60-LC is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of swit | UTC 友顺 | | ||
3A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N60Z is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching appl | UTC 友顺 | | ||
3A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N60Z is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching appl | UTC 友顺 | | ||
3A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N60Z is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching appl | UTC 友顺 | | ||
3 Amps, 600/650 Volts N-CHANNEL POWER MOSFET 文件：363.66 Kbytes Page：8 Pages | UTC 友顺 | | ||
3A, 600V N-CHANNEL POWER MOSFET 文件：388.87 Kbytes Page：8 Pages | UTC 友顺 | | ||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：399.37 Kbytes Page：9 Pages | UTC 友顺 | | ||
isc N-Channel MOSFET Transistor 文件：156.18 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
Power MOSFET 文件：1.07626 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
Power MOSFET 文件：1.07625 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
N-Channel 650 V (D-S) MOSFET 文件：1.08671 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
N-Channel 650 V (D-S) MOSFET 文件：1.08671 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
N-CHANNEL POWER MOSFET 文件：2.15912 Mbytes Page：7 Pages | SUNMATE 森美特 | | ||
N-CHANNEL POWER MOSFET 文件：2.15912 Mbytes Page：7 Pages | SUNMATE 森美特 | | ||
N-CHANNEL POWER MOSFET 文件：2.15912 Mbytes Page：7 Pages | SUNMATE 森美特 | | ||
N-Channel 650 V (D-S) MOSFET 文件：1.0867 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：399.37 Kbytes Page：9 Pages | UTC 友顺 | | ||
3A, 600V N-CHANNEL POWER MOSFET 文件：388.87 Kbytes Page：8 Pages | UTC 友顺 | | ||
3A, 600V N-CHANNEL POWER MOSFET 文件：388.87 Kbytes Page：8 Pages | UTC 友顺 | | ||
3A, 600V N-CHANNEL POWER MOSFET 文件：388.87 Kbytes Page：8 Pages | UTC 友顺 | | ||
3A, 600V N-CHANNEL POWER MOSFET 文件：388.87 Kbytes Page：8 Pages | UTC 友顺 | | ||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：399.37 Kbytes Page：9 Pages | UTC 友顺 | | ||
3A, 600V N-CHANNEL POWER MOSFET 文件：388.87 Kbytes Page：8 Pages | UTC 友顺 | | ||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：399.37 Kbytes Page：9 Pages | UTC 友顺 | |
3N60产品属性
- 类型
描述
- Vdss(V)：
600
- Vgss(V)：
30
- Id(A)：
3
- Package：
TO-220TO-220FTO-...
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI |
23+ |
DIP |
3473 |
全新原装假一赔十 |
|||
MOTOROLA |
24+/25+ |
39 |
原装正品现货库存价优 |
||||
UTC |
24+ |
TO251 |
6000 |
深圳原装现货价格优势 |
|||
ST |
25+ |
TO-220 |
27500 |
原装正品,价格最低! |
|||
ST |
24+ |
TO-220 |
30 |
||||
VBsemi |
25+ |
TO220F |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
UTC |
1003+ |
SOT252 |
327 |
全新 发货1-2天 |
|||
仙童 |
24+ |
TO-220 |
5200 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
VBsemi |
21+ |
TO252 |
10065 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
UTC/友顺 |
25+ |
TO-251 |
50000 |
原盒原标,正品现货 诚信经营 价格美丽 假一罚十 |
3N60规格书下载地址
3N60参数引脚图相关
- 555电路
- 555
- 54286
- 5386
- 5369
- 51单片机
- 500t
- 5000
- 4921
- 4899
- 485接口
- 47471
- 4735
- 47301
- 4591
- 4536
- 4313
- 4069
- 4066
- 3q1
- 3N70A
- 3N68A
- 3N65Z
- 3N65K
- 3N65A
- 3N65_15
- 3N62N3
- 3N60ZG
- 3N60Z
- 3N60T
- 3N60P
- 3N60K
- 3N60G-X-TM3-R
- 3N60G-X-TF3-T
- 3N60G-X-TF1-T
- 3N60G-X-TA3-T
- 3N60G-TN3-R
- 3N60G-TM3-R
- 3N60G-TF3-T
- 3N60G-TF1-T
- 3N60G-TA3-T
- 3N60G
- 3N60F
- 3N60D
- 3N60-B-TA3-T
- 3N60-A-TA3-T
- 3N60AL-TN3-T
- 3N60AL-TN3-R
- 3N60AL-TF3-T
- 3N60AG-TN3-T
- 3N60AG-TN3-R
- 3N60AG-TF3-T
- 3N60A4
- 3N60A
- 3N60_15
- 3N60_11
- 3N60_09
- 3N591A
- 3N57
- 3N50ZL-TF3-T
- 3N50ZG-TF3-T
- 3N50ZG
- 3N50Z
- 3N50L-TN3-R
- 3N50L-TF3-T
- 3N50G-TN3-R
- 3N50G-TF3-T
- 3N50_1109
- 3N50_11
- 3N50
- 3N48D-21
- 3N48
- 3N443BA
- 3N40K3
- 3N40_15
- 3N369
- 3N304-D000-S08BF
- 3N304-D000-S08 BF
- 3N304-A000-S08BF
- 3N304-A000-S08 BF
- 3N263TX
- 3N263
- 3N262TX
- 3N262
- 3N261TX
- 3N261
- 3N259-M
- 3N259
- 3N258-M
- 3N258
- 3N257-M
- 3N257
- 3N256-M
- 3N256
- 3N255-M
3N60数据表相关新闻
3LD3054-0TK51
3LD3054-0TK51
2023-12-133HPSNS1-HG电源接入模块
TE Connectivity (TE) 的 Corcom 电源接入模块适用于 I 类或 II 类医疗设备
2023-3-33peak全新原装特价销售TP1562A
3peak全新原装特价销售TP1562A
2022-10-273peak全新原装特价销售TP1564A
3peak全新原装特价销售TP1564A
2022-10-273peak全新原装特价销售TPF140
3peak全新原装特价销售TPF140
2022-10-273MM绿发普绿短脚 LED
国产 现货100K
2022-7-5
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