位置：首页 > IC中文资料第6165页 > 3N60
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
3N60 | 3 Amps, 600/650 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N60 is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching app | UTC 友顺 |   | |
3N60 | N-CHANNEL POWER MOSFET DESCRIPTION 3N60 3N65 is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applic | ZSELEC 淄博圣诺 | | |
3N60 | 600V N-Channel Power MOSFET 文件：2.13901 Mbytes Page：8 Pages | DYELECDIYI Electronic Technology Co., Ltd. 迪一电子山东迪一电子科技有限公司 | | |
3N60 | N-Channel Power MOSFET 文件：442.29 Kbytes Page：9 Pages | NELLSEMI 尼尔半导体 | | |
3N60 | N-Channel 650 V (D-S) MOSFET 文件：1.08665 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | |
3N60 | Fast Switching 文件：49.9 Kbytes Page：2 Pages | ISC 无锡固电 | | |
3N60 | N-CHANNEL POWER MOSFET 文件：2.15912 Mbytes Page：7 Pages | SUNMATE 森美特 | | |
3N60 | 3 Amps, 600/650 Volts N-CHANNEL POWER MOSFET 文件：363.66 Kbytes Page：8 Pages | UTC 友顺 | | |
3N60 | 3A, 600V N-CHANNEL POWER MOSFET 文件：388.87 Kbytes Page：8 Pages | UTC 友顺 | | |
3N60 | 3A, 600V N-CHANNEL POWER MOSFET 文件：388.87 Kbytes Page：8 Pages | UTC 友顺 | | |
3A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N60A is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used in the high speed switching app | UTC 友顺 | | ||
600V, SMPS Series N-Channel IGBT The HGTD3N60A4S and the HGTP3N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on state voltage drop | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
600V, SMPS Series N-Channel IGBT The HGTD3N60A4S, HGT1S3N60A4S and the HGTP3N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-stat | Intersil | | ||
3A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N60A is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used in the high speed switching app | UTC 友顺 | | ||
3A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N60A is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used in the high speed switching app | UTC 友顺 | | ||
3A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N60A is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used in the high speed switching app | UTC 友顺 | | ||
3A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N60A is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used in the high speed switching app | UTC 友顺 | | ||
3A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N60A is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used in the high speed switching app | UTC 友顺 | | ||
3A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N60A is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used in the high speed switching app | UTC 友顺 | | ||
3 Amps, 600/650 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N60 is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching app | UTC 友顺 | | ||
3 Amps, 600/650 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N60 is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching app | UTC 友顺 | | ||
3A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N60K is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching | UTC 友顺 | | ||
3A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N60K is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching | UTC 友顺 | | ||
3A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N60K is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching | UTC 友顺 | | ||
3A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N60K is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching | UTC 友顺 | | ||
3A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N60K is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching | UTC 友顺 | | ||
3A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N60K is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching | UTC 友顺 | | ||
3A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N60K is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching | UTC 友顺 | | ||
3 Amps, 600/650 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N60 is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching app | UTC 友顺 | | ||
3 Amps, 600/650 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N60 is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching app | UTC 友顺 | | ||
3.0A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N60-LC is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of swit | UTC 友顺 | | ||
3.0A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N60-LC is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of swit | UTC 友顺 | | ||
3.0A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N60-LC is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of swit | UTC 友顺 | | ||
3.0A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N60-LC is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of swit | UTC 友顺 | | ||
3A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N60Z is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching appl | UTC 友顺 | | ||
3A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N60Z is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching appl | UTC 友顺 | | ||
3A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N60Z is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching appl | UTC 友顺 | | ||
3 Amps, 600/650 Volts N-CHANNEL POWER MOSFET 文件：363.66 Kbytes Page：8 Pages | UTC 友顺 | | ||
3A, 600V N-CHANNEL POWER MOSFET 文件：388.87 Kbytes Page：8 Pages | UTC 友顺 | | ||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：399.37 Kbytes Page：9 Pages | UTC 友顺 | | ||
isc N-Channel MOSFET Transistor 文件：156.18 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
Power MOSFET 文件：1.07626 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
Power MOSFET 文件：1.07625 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
N-Channel 650 V (D-S) MOSFET 文件：1.08671 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
N-Channel 650 V (D-S) MOSFET 文件：1.08671 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
N-CHANNEL POWER MOSFET 文件：2.15912 Mbytes Page：7 Pages | SUNMATE 森美特 | | ||
N-CHANNEL POWER MOSFET 文件：2.15912 Mbytes Page：7 Pages | SUNMATE 森美特 | | ||
N-CHANNEL POWER MOSFET 文件：2.15912 Mbytes Page：7 Pages | SUNMATE 森美特 | | ||
3A, 600V N-CHANNEL POWER MOSFET 文件：388.87 Kbytes Page：8 Pages | UTC 友顺 | | ||
3A, 600V N-CHANNEL POWER MOSFET 文件：388.87 Kbytes Page：8 Pages | UTC 友顺 | | ||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：399.37 Kbytes Page：9 Pages | UTC 友顺 | | ||
N-Channel 650 V (D-S) MOSFET 文件：1.0867 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
3A, 600V N-CHANNEL POWER MOSFET 文件：388.87 Kbytes Page：8 Pages | UTC 友顺 | | ||
3A, 600V N-CHANNEL POWER MOSFET 文件：388.87 Kbytes Page：8 Pages | UTC 友顺 | | ||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：399.37 Kbytes Page：9 Pages | UTC 友顺 | | ||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：399.37 Kbytes Page：9 Pages | UTC 友顺 | | ||
3A, 600V N-CHANNEL POWER MOSFET 文件：388.87 Kbytes Page：8 Pages | UTC 友顺 | | ||
3A, 600V N-CHANNEL POWER MOSFET 文件：388.87 Kbytes Page：8 Pages | UTC 友顺 | | ||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：399.37 Kbytes Page：9 Pages | UTC 友顺 | | ||
3A, 600V N-CHANNEL POWER MOSFET 文件：388.87 Kbytes Page：8 Pages | UTC 友顺 | |
3N60产品属性
- 类型
描述
- 型号
3N60
- 制造商
UTC-IC
- 制造商全称
UTC-IC
- 功能描述
3 Amps, 600/650 Volts N-CHANNEL POWER MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VBsemi |
24+ |
TO220F |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
ON/安森美 |
23+ |
TO252 |
5000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
TOSHIBA |
12+ |
TO-252 |
15000 |
全新原装,绝对正品,公司现货供应。 |
|||
AO/万代 |
23+ |
TO-220 |
69820 |
终端可以免费供样,支持BOM配单! |
|||
UTC/友顺 |
20+ |
TO-220F |
7500 |
现货很近!原厂很远!只做原装 |
|||
UTC/友顺 |
24+ |
TO-251 |
50000 |
全新原装,一手货源,全场热卖! |
|||
TI |
23+ |
DIP |
3473 |
全新原装假一赔十 |
|||
ST |
24+ |
TO-220 |
30 |
||||
MOT |
2023+ |
CAN4 |
50000 |
原装现货 |
|||
WG |
23+24 |
TO251 |
53870 |
原装正品,原盘原标,提供BOM一站式配单 |
3N60芯片相关品牌
3N60规格书下载地址
3N60参数引脚图相关
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- 3N259
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- 3N257-M
- 3N257
- 3N256-M
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- 3N255-M
3N60数据表相关新闻
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