位置：首页 > IC中文资料 > FGD3N60LSDTMCT
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
3 Amps, 600/650 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N60 is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching app | UTC 友顺 |   | ||
3 Amps, 600/650 Volts N-CHANNEL POWER MOSFET 文件：363.66 Kbytes Page：8 Pages | UTC 友顺 | | ||
Fast Switching 文件：49.9 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
N-Channel 650 V (D-S) MOSFET 文件：1.08665 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
N-Channel Power MOSFET 文件：442.29 Kbytes Page：9 Pages | NELLSEMI 尼尔半导体 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHI |
18+ |
TO-220 |
85600 |
保证进口原装可开17%增值税发票 |
|||
MOT |
2023+ |
CAN4 |
50000 |
原装现货 |
|||
VBsemi |
24+ |
TO220F |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
ST |
24+ |
TO-220 |
30 |
||||
MOTOROLA |
24+/25+ |
39 |
原装正品现货库存价优 |
||||
UTC |
24+ |
TO251 |
6000 |
深圳原装现货价格优势 |
|||
ST |
24+ |
TO-220 |
27500 |
原装正品,价格最低! |
|||
VBsemi |
21+ |
TO252 |
10065 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
MOT |
24+ |
CAN4 |
8985 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
|||
UTC/友顺 |
2022+ |
TO-252 |
6000 |
原厂代理 终端免费提供样品 |
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FGD3N60LSDTMCT规格书下载地址
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650 V TO-247-4 IGBT 晶体管 , 4.5 kV IGBT 晶体管 , 650 V TO-247 IGBT 晶体管 , 1200 V Si 300 A IGBT 晶体管 , 650 V Si 100 A IGBT Transistors IGBT 晶体管 , 600 V Single Through Hole 40 A IGBT 晶体管
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650 V TO-247-4 IGBT 晶体管 , 4.5 kV IGBT 晶体管 , 650 V TO-247 IGBT 晶体管 , 1200 V Si 300 A IGBT 晶体管 , 650 V Si 100 A IGBT Transistors IGBT 晶体管 , 600 V Single Through Hole 40 A IGBT 晶体管
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DdatasheetPDF页码索引
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