位置：首页 > IC中文资料 > FGD3N60LLSD
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
3 Amps, 600/650 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N60 is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching app | UTC 友顺 |   | ||
3 Amps, 600/650 Volts N-CHANNEL POWER MOSFET 文件：363.66 Kbytes Page：8 Pages | UTC 友顺 | | ||
Fast Switching 文件：49.9 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
N-Channel 650 V (D-S) MOSFET 文件：1.08665 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
N-Channel Power MOSFET 文件：442.29 Kbytes Page：9 Pages | NELLSEMI 尼尔半导体 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MOT |
24+ |
CAN4 |
6540 |
原装现货/欢迎来电咨询 |
|||
VBSEMI/台湾微碧 |
24+ |
TO-252 |
60000 |
||||
AAT |
24+ |
TO-220/F |
50000 |
原装现货假一罚十 |
|||
VBsemi |
23+ |
TO252 |
50000 |
全新原装正品现货,支持订货 |
|||
VBsemi |
24+ |
TO220F |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
VBsemi |
21+ |
TO252 |
10065 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ON/安森美 |
23+ |
TO252 |
5000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
TOSHIBA |
12+ |
TO-252 |
15000 |
全新原装,绝对正品,公司现货供应。 |
|||
UTC/友顺 |
24+ |
TO-251 |
50000 |
全新原装,一手货源,全场热卖! |
|||
VBSEMI/台湾微碧 |
23+ |
TO252 |
50000 |
全新原装正品现货,支持订货 |
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FGD3N60LLSD规格书下载地址
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FGD3N60LLSD数据表相关新闻
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2020-12-31FGH40N60SFDTU
650 V TO-247-4 IGBT 晶体管 , 4.5 kV IGBT 晶体管 , 650 V TO-247 IGBT 晶体管 , 1200 V Si 300 A IGBT 晶体管 , 650 V Si 100 A IGBT Transistors IGBT 晶体管 , 600 V Single Through Hole 40 A IGBT 晶体管
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650 V TO-247-4 IGBT 晶体管 , 4.5 kV IGBT 晶体管 , 650 V TO-247 IGBT 晶体管 , 1200 V Si 300 A IGBT 晶体管 , 650 V Si 100 A IGBT Transistors IGBT 晶体管 , 600 V Single Through Hole 40 A IGBT 晶体管
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DdatasheetPDF页码索引
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