Field Stop Trench IGBT

文件：946.61 Kbytes Page：11 Pages

Field-Stop Trench IGBT

DESCRIPTION · Low Saturation Voltage:VCE(sat)=2.0V@IC=40A · High Current Capability · High Input Impedance · Fast Switching APPLICATIONS · Motor Driver · Automotive Chargers · Onboard Charge · AirCon Compressor

IGBT - Field Stop, Trench 650 V, 40 A

General Description Using the novel field stop 3rd generation IGBT technology, FGH40T65SPD−F085 offers the optimum performance with both low conduction loss and switching loss for a high efficiency operation in various applications, while provides 50 V higher blocking voltage and rugged high

Field Stop Trench IGBT

文件：946.61 Kbytes Page：11 Pages

Field Stop Trench IGBT

文件：946.61 Kbytes Page：11 Pages

IGBT for Automotive Applications 650 V, 40 A

Using novel field stop IGBT technology, onsemi’s new series of FS4 IGBTs offer the optimum performance for automotive applications. This technology is Short circuit rated and offers high figure of merit with low conduction and switching losses. Features • Maximum Junction Temperature: TJ = 17

IGBT for Automotive Applications, 650 V, 40 A, D2PAK

Features  Maximum Junction Temperature: TJ = 175C  High Speed Switching Series  VCE(sat) = 1.6 V (Typ.) @ IC = 40 A  100% of the Part are Dynamically Tested (Note 1)  AEC−Q101 Qualified  These Devices are Pb−Free and are RoHS Compliant Typical Applications  Automotive On Board

IGBT for Automotive Application 650 V, 40 A

Using novel field stop IGBT technology, onsemi’s new series of FS4 IGBTs offer the optimum performance for automotive applications. This technology is Short circuit rated and offers high figure of merit with low conduction and switching losses. Features • Maximum Junction Temperature: TJ = 17

650V Field Stop IGBT

文件：1.88982 Mbytes Page：8 Pages

IGBT for Automotive Applications, 650 V, 40 A, D2PAK

文件：271.44 Kbytes Page：9 Pages