300V PDP IGBT

Description Employing Unified IGBT Technology, FGA90N30D provides low conduction and switching loss. FGA90N30D offers the optimum solution for PDP applications where low condution loss is essential. Features • High Current Capability • Low saturation voltage: VCE(sat), Typ = 1.1V@ IC

300V PDP IGBT

封装/外壳：TO-3P-3，SC-65-3 包装：管件 描述：IGBT 300V 90A 219W TO3P 分立半导体产品 晶体管 - UGBT、MOSFET - 单

HiPerFET Power MOSFETs

Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrinsic rectifier Applications • DC-DC converters • Battery

HiPerFET Power MOSFETs ISOPLUS247

HiPerFET™ Power MOSFETs ISOPLUS247™ (Electrically Isolated Back Surface) Single MOSFET Die Features • Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation • Low drain to tab capacitance(

HiPerFET Power MOSFETs

Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrinsic rectifier Applications • DC-DC converters • Battery

300V, 90A PDP IGBT

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HiPerFET Power MOSFETs Single Die MOSFET

文件：73.44 Kbytes Page：2 Pages