HiPerFET Power MOSFETs

Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrinsic rectifier Applications • DC-DC converters • Battery

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=90A@ TC=25℃ ·Drain Source Voltage- : VDSS=300V(Min) ·Static Drain-Source On-Resistance : RDS(on) =33mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conve

N-Channel: Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

300V PDP IGBT

Description Employing Unified IGBT Technology, FGA90N30 provides low conduction and switching loss. FGA90N30 offers the optimum solution for PDP applications where low condution loss is essential. Features • High Current Capability • Low saturation voltage: VCE(sat), Typ = 1.1V@ IC =

300V PDP IGBT

Description Employing Unified IGBT Technology, FGA90N30D provides low conduction and switching loss. FGA90N30D offers the optimum solution for PDP applications where low condution loss is essential. Features • High Current Capability • Low saturation voltage: VCE(sat), Typ = 1.1V@ IC

N-Channel Enhancement Mode MOSFET

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N-Channel Enhancement Mode MOSFET

文件：245.53 Kbytes Page：4 Pages

300V, 90A PDP IGBT

文件：700.37 Kbytes Page：7 Pages