HiPerFET Power MOSFETs

Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrinsic rectifier Applications • DC-DC converters • Battery

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 90A@ TC=25℃ ·Drain Source Voltage : VDSS= 300V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 33mΩ(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications

N通道HiPerFET

300V PDP IGBT

Description Employing Unified IGBT Technology, FGA90N30 provides low conduction and switching loss. FGA90N30 offers the optimum solution for PDP applications where low condution loss is essential. Features • High Current Capability • Low saturation voltage: VCE(sat), Typ = 1.1V@ IC =

300V PDP IGBT

Description Employing Unified IGBT Technology, FGA90N30D provides low conduction and switching loss. FGA90N30D offers the optimum solution for PDP applications where low condution loss is essential. Features • High Current Capability • Low saturation voltage: VCE(sat), Typ = 1.1V@ IC

N-Channel Enhancement Mode MOSFET

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N-Channel Enhancement Mode MOSFET

文件：245.53 Kbytes Page：4 Pages

300V, 90A PDP IGBT

文件：700.37 Kbytes Page：7 Pages