1200 V, 25 A NPT Trench IGBT

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IGBT

DESCRIPTION ·Low Saturation Voltage:VCE(sat)=2.5V@IC=25A ·High Current Capability ·High Input Impedance ·Fast Switching APPLICATIONS ·Induction Heating,UPS ·AC & DC motor controls and general purpose inverters

IGBT

General Description Employing NPT technology, Fairchild’s AN series of IGBTs provides low conduction and switching losses. The AN series offers an solution for application such as induction heating (IH), motor control, general purpose inverters and uninterruptible power supplies (UPS).

IGBT

General Description Employing NPT technology, Fairchild’s AND series of IGBTs provides low conduction and switching losses. The AND series offers an solution for application such as induction heating (IH), motor control, general purpose inverters and uninterruptible power supplies (UPS). Feature

1200V NPT Trench IGBT

Description Using Fairchild®s proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device is well suited for the resonant or soft switching application such as i

NPT Trench IGBT

DESCRIPTION · NPT Trench Technology, Positive temperature coefficien · Extremely enhanced avalanche capabilityt · Low Saturation Voltage: VCE(sat) = 2.0 V(Typ.) @ IC = 25 A APPLICATIONS ·Solar Inverter, UPS, Welder, Digital Power Generator ·Telecom, ESS

1200 V, 25 A NPT Trench IGBT

Description Using Fairchild®s proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device is well suited for the resonant or soft switching application such as i

High speed switching

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1200V NPT Trench IGBT

文件：658.77 Kbytes Page：9 Pages

1200V NPT Trench IGBT

文件：658.77 Kbytes Page：9 Pages

1200V NPT Trench IGBT

文件：658.77 Kbytes Page：9 Pages

封装/外壳：TO-3P-3，SC-65-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IGBT NPT/TRENCH 1200V 50A TO3P 分立半导体产品 晶体管 - UGBT、MOSFET - 单

1200 V, 25 A NPT Trench IGBT

文件：1.38861 Mbytes Page：9 Pages

1200 V, 25 A NPT Trench IGBT

文件：1.38861 Mbytes Page：9 Pages

封装/外壳：TO-3P-3，SC-65-3 包装：管件 描述：IGBT 1200V 50A 312W TO3P 分立半导体产品 晶体管 - UGBT、MOSFET - 单

1200V, 25A Field Stop Trench IGBT

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Low VCE(sat) High speed IGBT

Low VCE(sat) High speed IGBT Features • International standard package JEDEC TO-247 AD • 2nd generation HDMOSTM process • Low VCE(sat) - for low on-state conduction losses • MOS Gate turn-on - drive simplicity Applications • AC motor speed control • DC servo and robot drives • DC

Extremely enhanced avalanche capability

General Description Din-Tek Field Stop Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness. It is designed for applications such as motor control, uninterrupted power supplies(UPS), general inverters. FEATURES ·High speed switching ·High ruggedness,

Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package

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