1200 V, 25 A NPT Trench IGBT

Description Using Fairchild®s proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device is well suited for the resonant or soft switching application such as i

1200 V, 25 A NPT Trench IGBT

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封装/外壳：TO-3P-3，SC-65-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IGBT NPT/TRENCH 1200V 50A TO3P 分立半导体产品 晶体管 - UGBT、MOSFET - 单

1200 V, 25 A NPT Trench IGBT

文件：1.38861 Mbytes Page：9 Pages

封装/外壳：TO-3P-3，SC-65-3 包装：管件 描述：IGBT 1200V 50A 312W TO3P 分立半导体产品 晶体管 - UGBT、MOSFET - 单

1200 V, 25 A NPT Trench IGBT

文件：1.38861 Mbytes Page：9 Pages

IGBT

General Description Employing NPT technology, Fairchild’s AN series of IGBTs provides low conduction and switching losses. The AN series offers an solution for application such as induction heating (IH), motor control, general purpose inverters and uninterruptible power supplies (UPS).

Low VCE(sat) High speed IGBT

Low VCE(sat) High speed IGBT Features • International standard package JEDEC TO-247 AD • 2nd generation HDMOSTM process • Low VCE(sat) - for low on-state conduction losses • MOS Gate turn-on - drive simplicity Applications • AC motor speed control • DC servo and robot drives • DC

Extremely enhanced avalanche capability

General Description Din-Tek Field Stop Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness. It is designed for applications such as motor control, uninterrupted power supplies(UPS), general inverters. FEATURES ·High speed switching ·High ruggedness,

Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package

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