Description

ThPTB 20080 is a class A/AB, NPN, silicon bipolar junction, internallymatched RF power transistor intended for 26 Vdc operation from 1.6 to 1.7 GHz. It is rated at 25 Watts minimum output power for PEP applications. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100 lot traceability is standard.

• 25 Watts, 1.6–1.7 GHz

• Class AB Characteristics

• 40 Collector Efficiency at 25 Watts

• Gold Metallization

• Silicon Nitride Passivated