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DS122价格
参考价格:¥56.2202
型号:DS1220AB-100+ 品牌:Maxim 备注:这里有DS122多少钱,2025年最近7天走势,今日出价,今日竞价,DS122批发/采购报价,DS122行情走势销售排行榜,DS122报价。型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
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16k Nonvolatile SRAM DESCRIPTION The DS1220AB and DS1220AD 16k Nonvolatile SRAMs are 16,384-bit, fully static, nonvolatile SRAMs organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a | Dallas | |||
16k Nonvolatile SRAM DESCRIPTION The DS1220AB and DS1220AD 16k Nonvolatile SRAMs are 16,384-bit, fully static, nonvolatile SRAMs organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a | Dallas | |||
16k Nonvolatile SRAM DESCRIPTION The DS1220Y 16k Nonvolatile SRAM is a 16,384-bit, fully static, nonvolatile RAM organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitor VCCfor an out-of-tolerance condition. FEATURES 10 ye | Dallas | |||
16k Nonvolatile SRAM DESCRIPTION The DS1220AB and DS1220AD 16k Nonvolatile SRAMs are 16,384-bit, fully static, nonvolatile SRAMs organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a | Dallas | |||
16k Nonvolatile SRAM DESCRIPTION The DS1220Y 16k Nonvolatile SRAM is a 16,384-bit, fully static, nonvolatile RAM organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitor VCCfor an out-of-tolerance condition. FEATURES 10 ye | Dallas | |||
16k Nonvolatile SRAM DESCRIPTION The DS1220AB and DS1220AD 16k Nonvolatile SRAMs are 16,384-bit, fully static, nonvolatile SRAMs organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a | Dallas | |||
16k Nonvolatile SRAM DESCRIPTION The DS1220Y 16k Nonvolatile SRAM is a 16,384-bit, fully static, nonvolatile RAM organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitor VCCfor an out-of-tolerance condition. FEATURES 10 ye | Dallas | |||
16k Nonvolatile SRAM DESCRIPTION The DS1220AB and DS1220AD 16k Nonvolatile SRAMs are 16,384-bit, fully static, nonvolatile SRAMs organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a | Dallas | |||
16k Nonvolatile SRAM DESCRIPTION The DS1220AB and DS1220AD 16k Nonvolatile SRAMs are 16,384-bit, fully static, nonvolatile SRAMs organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a | Dallas | |||
16k Nonvolatile SRAM DESCRIPTION The DS1220Y 16k Nonvolatile SRAM is a 16,384-bit, fully static, nonvolatile RAM organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitor VCCfor an out-of-tolerance condition. FEATURES 10 ye | Dallas | |||
16k Nonvolatile SRAM DESCRIPTION The DS1220AB and DS1220AD 16k Nonvolatile SRAMs are 16,384-bit, fully static, nonvolatile SRAMs organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a | Dallas | |||
16k Nonvolatile SRAM DESCRIPTION The DS1220AB and DS1220AD 16k Nonvolatile SRAMs are 16,384-bit, fully static, nonvolatile SRAMs organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a | Maxim 美信 | |||
16k Nonvolatile SRAM DESCRIPTION The DS1220AB and DS1220AD 16k Nonvolatile SRAMs are 16,384-bit, fully static, nonvolatile SRAMs organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a | Dallas | |||
16k Nonvolatile SRAM DESCRIPTION The DS1220Y 16k Nonvolatile SRAM is a 16,384-bit, fully static, nonvolatile RAM organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitor VCCfor an out-of-tolerance condition. FEATURES 10 ye | Dallas | |||
16k Nonvolatile SRAM DESCRIPTION The DS1220Y 16k Nonvolatile SRAM is a 16,384-bit, fully static, nonvolatile RAM organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitor VCCfor an out-of-tolerance condition. FEATURES 10 ye | Dallas | |||
16k Nonvolatile SRAM DESCRIPTION The DS1220AB and DS1220AD 16k Nonvolatile SRAMs are 16,384-bit, fully static, nonvolatile SRAMs organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a | Dallas | |||
16k Nonvolatile SRAM DESCRIPTION The DS1220Y 16k Nonvolatile SRAM is a 16,384-bit, fully static, nonvolatile RAM organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitor VCCfor an out-of-tolerance condition. FEATURES 10 ye | Dallas | |||
16k Nonvolatile SRAM DESCRIPTION The DS1220AB and DS1220AD 16k Nonvolatile SRAMs are 16,384-bit, fully static, nonvolatile SRAMs organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a | Dallas | |||
16k Nonvolatile SRAM DESCRIPTION The DS1220AB and DS1220AD 16k Nonvolatile SRAMs are 16,384-bit, fully static, nonvolatile SRAMs organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a | Dallas | |||
16k Nonvolatile SRAM DESCRIPTION The DS1220Y 16k Nonvolatile SRAM is a 16,384-bit, fully static, nonvolatile RAM organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitor VCCfor an out-of-tolerance condition. FEATURES 10 ye | Dallas | |||
16k Nonvolatile SRAM DESCRIPTION The DS1220Y 16k Nonvolatile SRAM is a 16,384-bit, fully static, nonvolatile RAM organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitor VCCfor an out-of-tolerance condition. FEATURES 10 ye | Dallas | |||
16k Nonvolatile SRAM DESCRIPTION The DS1220Y 16k Nonvolatile SRAM is a 16,384-bit, fully static, nonvolatile RAM organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitor VCCfor an out-of-tolerance condition. FEATURES 10 ye | Dallas | |||
16k Nonvolatile SRAM DESCRIPTION The DS1220Y 16k Nonvolatile SRAM is a 16,384-bit, fully static, nonvolatile RAM organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitor VCCfor an out-of-tolerance condition. FEATURES 10 ye | Dallas | |||
16k Nonvolatile SRAM DESCRIPTION The DS1220Y 16k Nonvolatile SRAM is a 16,384-bit, fully static, nonvolatile RAM organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitor VCCfor an out-of-tolerance condition. FEATURES 10 ye | Dallas | |||
16k Nonvolatile SRAM DESCRIPTION The DS1220Y 16k Nonvolatile SRAM is a 16,384-bit, fully static, nonvolatile RAM organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitor VCCfor an out-of-tolerance condition. FEATURES 10 ye | Dallas | |||
Nonvolatile Controller x 4 Chip DESCRIPTION The DS1221 Nonvolatile Controller x 4 Chip is a CMOS circuit which solves the application problem of converting CMOS RAMs into nonvolatile memories. Incoming power is monitored for an out-of tolerance condition. When such a condition is detected, the chip enable outputs are inhibite | Dallas | |||
BankSwitch Chip DESCRIPTION The DS1222 BankSwitch Chip is a CMOS circuit designed to select one of 16 memory banks under software control. Memory bank switching allows for an increase in memory capacity without additional address lines. Continuous blocks of memory are enabled by selecting proper memory bank thro | Dallas | |||
64K Nonvolatile SRAM DESCRIPTION The DS1225Y 64k Nonvolatile SRAM is a 65,536-bit, fully static, nonvolatile RAM organized as 8192 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCCfor an out-of-tolerance condition. When such a condition occu | Dallas | |||
64K Nonvolatile SRAM DESCRIPTION The DS1225Y 64k Nonvolatile SRAM is a 65,536-bit, fully static, nonvolatile RAM organized as 8192 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCCfor an out-of-tolerance condition. When such a condition occu | Dallas | |||
64K Nonvolatile SRAM DESCRIPTION The DS1225Y 64k Nonvolatile SRAM is a 65,536-bit, fully static, nonvolatile RAM organized as 8192 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCCfor an out-of-tolerance condition. When such a condition occu | Dallas | |||
64K Nonvolatile SRAM DESCRIPTION The DS1225Y 64k Nonvolatile SRAM is a 65,536-bit, fully static, nonvolatile RAM organized as 8192 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCCfor an out-of-tolerance condition. When such a condition occu | Dallas | |||
64K Nonvolatile SRAM DESCRIPTION The DS1225Y 64k Nonvolatile SRAM is a 65,536-bit, fully static, nonvolatile RAM organized as 8192 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCCfor an out-of-tolerance condition. When such a condition occu | Dallas | |||
64K Nonvolatile SRAM DESCRIPTION The DS1225Y 64k Nonvolatile SRAM is a 65,536-bit, fully static, nonvolatile RAM organized as 8192 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCCfor an out-of-tolerance condition. When such a condition occu | Dallas | |||
KickStarter Chip DESCRIPTION The DS1227 Kickstarter is a unique CMOS circuit which combines power conversion and microenergy management functions for battery operated systems. Using its integral DC-DC converter, the DS1227 supplies +5V on demand from either a 3– or 6–volt battery input. FEATURES • Provides ste | Dallas | |||
KickStarter Chip DESCRIPTION The DS1227 Kickstarter is a unique CMOS circuit which combines power conversion and microenergy management functions for battery operated systems. Using its integral DC-DC converter, the DS1227 supplies +5V on demand from either a 3– or 6–volt battery input. FEATURES • Provides ste | Dallas | |||
5V Powered Dual RS-232 Transmitter/Receiver DESCRIPTION The DS1228 is a dual RS-232-C Receiver/Transmitter that meets all EIA specifications while operating from a single, +5 volt supply. The DS1228 has two internal charge pumps. One of the charge pumps is used to generate +10 volts. The other is used to generate -10 volts. The DS1228 al | Dallas | |||
Platon Metal Tube VA Gas or Liquid 文件:509.1 Kbytes Page:5 Pages | TTELEC | |||
石英晶体谐振器 | HLJT 惠伦晶体 | |||
16k非易失SRAM | AD 亚德诺 | |||
16k Nonvolatile SRAM 文件:207.34 Kbytes Page:8 Pages | Dallas | |||
16k Nonvolatile SRAM 文件:201.36 Kbytes Page:8 Pages | Maxim 美信 | |||
16k Nonvolatile SRAM 文件:207.34 Kbytes Page:8 Pages | Dallas | |||
16k Nonvolatile SRAM 文件:201.36 Kbytes Page:8 Pages | Maxim 美信 | |||
16k Nonvolatile SRAM 文件:201.36 Kbytes Page:8 Pages | Maxim 美信 | |||
封装/外壳:24-DIP 模块(0.600",15.24mm) 包装:托盘 描述:IC NVSRAM 16KBIT PARALLEL 24EDIP 集成电路(IC) 存储器 | AD 亚德诺 | |||
封装/外壳:24-DIP 模块(0.600",15.24mm) 包装:管件 描述:IC NVSRAM 16KBIT PARALLEL 24EDIP 集成电路(IC) 存储器 | AD 亚德诺 | |||
16k Nonvolatile SRAM 文件:201.36 Kbytes Page:8 Pages | Maxim 美信 | |||
16K Nonvolatile SRAM 文件:258.54 Kbytes Page:7 Pages | ARTSCHIP | |||
16k Nonvolatile SRAM 文件:201.36 Kbytes Page:8 Pages | Maxim 美信 | |||
16K Nonvolatile SRAM 文件:258.54 Kbytes Page:7 Pages | ARTSCHIP | |||
16K Nonvolatile SRAM 文件:258.54 Kbytes Page:7 Pages | ARTSCHIP | |||
64k Nonvolatile SRAM 文件:147.62 Kbytes Page:10 Pages | Dallas | |||
64k Nonvolatile SRAM 文件:147.62 Kbytes Page:10 Pages | Dallas | |||
64k Nonvolatile SRAM 文件:147.62 Kbytes Page:10 Pages | Dallas | |||
64k Nonvolatile SRAM 文件:147.62 Kbytes Page:10 Pages | Dallas | |||
16K Nonvolatile SRAM 文件:258.54 Kbytes Page:7 Pages | ARTSCHIP | |||
64k Nonvolatile SRAM 文件:147.62 Kbytes Page:10 Pages | Dallas | |||
64k Nonvolatile SRAM 文件:147.62 Kbytes Page:10 Pages | Dallas | |||
16k Nonvolatile SRAM 文件:201.36 Kbytes Page:8 Pages | Maxim 美信 | |||
16k非易失SRAM | AD 亚德诺 |
DS122产品属性
- 类型
描述
- 型号
DS122
- 制造商
Miyama Electric
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
DALLAS |
24+ |
DIP-24 |
7500 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
DALLAS |
25+ |
DIP |
996880 |
只做原装,欢迎来电资询 |
|||
DALLAS |
24+ |
DIP |
13718 |
只做原装 公司现货库存 |
|||
Maxim |
25+ |
电联咨询 |
7800 |
公司现货,提供拆样技术支持 |
|||
DALLAS |
23+ |
MOD |
65480 |
||||
DALLAS |
24+ |
DIP |
19500 |
DALLAS授权代理品牌进口原装现货假一赔十 |
|||
DALLAS |
05+ |
PSDIP |
16 |
自己公司全新库存绝对有货 |
|||
DS |
24+ |
DIP |
37500 |
全新原装现货,量大价优! |
|||
DALLAS |
23+ |
DIP |
12800 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
24+ |
N/A |
73000 |
一级代理-主营优势-实惠价格-不悔选择 |
DS122规格书下载地址
DS122参数引脚图相关
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- d类功放
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- DS1220AB-200+
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- DS1220
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- DS1184
- DS1181LE+
- DS1-175-0005
- DS1-175-0004
- DS1-175-0003
- DS1-175-0002
- DS1-175-0001
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2019-4-4DS1050-5位,可编程,脉宽调制器-1kHz时,为5kHz,10kHz时,和25KHZ
DS1050是一个可编程的,5位,脉宽调制器采用2线可寻址控制接口。 DS1050经营范围从2.7V至5.5V的电源供应。 PWM输出提供了一个信号,从0V到VCC的波动。 DS1050需要一个典型工作电流为50 A和一个可编程的关断电源电流1 A四个标准的PWM输出频率,并提供包括1kHz时,为5kHz和10kHz和25kHz的。 2线寻址接口允许一个单一的2线总线上的多个设备的操作,并提供兼容性与其他Dallas Semiconductor的2线的设备,如实时时钟(RTC的),数字温度计和数字电位器。该设备是低成本LCD对比度和/或亮度控制,电源电压的理想选择调整,电池充电电流调节。 DS
2012-12-3
DdatasheetPDF页码索引
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