DS122价格

参考价格:¥56.2202

型号:DS1220AB-100+ 品牌:Maxim 备注:这里有DS122多少钱,2025年最近7天走势,今日出价,今日竞价,DS122批发/采购报价,DS122行情走势销售排行榜,DS122报价。
型号 功能描述 生产厂家 企业 LOGO 操作

16k Nonvolatile SRAM

DESCRIPTION The DS1220AB and DS1220AD 16k Nonvolatile SRAMs are 16,384-bit, fully static, nonvolatile SRAMs organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a

Dallas

16k Nonvolatile SRAM

DESCRIPTION The DS1220AB and DS1220AD 16k Nonvolatile SRAMs are 16,384-bit, fully static, nonvolatile SRAMs organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a

Dallas

16k Nonvolatile SRAM

DESCRIPTION The DS1220Y 16k Nonvolatile SRAM is a 16,384-bit, fully static, nonvolatile RAM organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitor VCCfor an out-of-tolerance condition. FEATURES 10 ye

Dallas

16k Nonvolatile SRAM

DESCRIPTION The DS1220AB and DS1220AD 16k Nonvolatile SRAMs are 16,384-bit, fully static, nonvolatile SRAMs organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a

Dallas

16k Nonvolatile SRAM

DESCRIPTION The DS1220Y 16k Nonvolatile SRAM is a 16,384-bit, fully static, nonvolatile RAM organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitor VCCfor an out-of-tolerance condition. FEATURES 10 ye

Dallas

16k Nonvolatile SRAM

DESCRIPTION The DS1220AB and DS1220AD 16k Nonvolatile SRAMs are 16,384-bit, fully static, nonvolatile SRAMs organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a

Dallas

16k Nonvolatile SRAM

DESCRIPTION The DS1220Y 16k Nonvolatile SRAM is a 16,384-bit, fully static, nonvolatile RAM organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitor VCCfor an out-of-tolerance condition. FEATURES 10 ye

Dallas

16k Nonvolatile SRAM

DESCRIPTION The DS1220AB and DS1220AD 16k Nonvolatile SRAMs are 16,384-bit, fully static, nonvolatile SRAMs organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a

Dallas

16k Nonvolatile SRAM

DESCRIPTION The DS1220AB and DS1220AD 16k Nonvolatile SRAMs are 16,384-bit, fully static, nonvolatile SRAMs organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a

Dallas

16k Nonvolatile SRAM

DESCRIPTION The DS1220Y 16k Nonvolatile SRAM is a 16,384-bit, fully static, nonvolatile RAM organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitor VCCfor an out-of-tolerance condition. FEATURES 10 ye

Dallas

16k Nonvolatile SRAM

DESCRIPTION The DS1220AB and DS1220AD 16k Nonvolatile SRAMs are 16,384-bit, fully static, nonvolatile SRAMs organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a

Dallas

16k Nonvolatile SRAM

DESCRIPTION The DS1220AB and DS1220AD 16k Nonvolatile SRAMs are 16,384-bit, fully static, nonvolatile SRAMs organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a

Maxim

美信

16k Nonvolatile SRAM

DESCRIPTION The DS1220AB and DS1220AD 16k Nonvolatile SRAMs are 16,384-bit, fully static, nonvolatile SRAMs organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a

Dallas

16k Nonvolatile SRAM

DESCRIPTION The DS1220Y 16k Nonvolatile SRAM is a 16,384-bit, fully static, nonvolatile RAM organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitor VCCfor an out-of-tolerance condition. FEATURES 10 ye

Dallas

16k Nonvolatile SRAM

DESCRIPTION The DS1220Y 16k Nonvolatile SRAM is a 16,384-bit, fully static, nonvolatile RAM organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitor VCCfor an out-of-tolerance condition. FEATURES 10 ye

Dallas

16k Nonvolatile SRAM

DESCRIPTION The DS1220AB and DS1220AD 16k Nonvolatile SRAMs are 16,384-bit, fully static, nonvolatile SRAMs organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a

Dallas

16k Nonvolatile SRAM

DESCRIPTION The DS1220Y 16k Nonvolatile SRAM is a 16,384-bit, fully static, nonvolatile RAM organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitor VCCfor an out-of-tolerance condition. FEATURES 10 ye

Dallas

16k Nonvolatile SRAM

DESCRIPTION The DS1220AB and DS1220AD 16k Nonvolatile SRAMs are 16,384-bit, fully static, nonvolatile SRAMs organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a

Dallas

16k Nonvolatile SRAM

DESCRIPTION The DS1220AB and DS1220AD 16k Nonvolatile SRAMs are 16,384-bit, fully static, nonvolatile SRAMs organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a

Dallas

16k Nonvolatile SRAM

DESCRIPTION The DS1220Y 16k Nonvolatile SRAM is a 16,384-bit, fully static, nonvolatile RAM organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitor VCCfor an out-of-tolerance condition. FEATURES 10 ye

Dallas

16k Nonvolatile SRAM

DESCRIPTION The DS1220Y 16k Nonvolatile SRAM is a 16,384-bit, fully static, nonvolatile RAM organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitor VCCfor an out-of-tolerance condition. FEATURES 10 ye

Dallas

16k Nonvolatile SRAM

DESCRIPTION The DS1220Y 16k Nonvolatile SRAM is a 16,384-bit, fully static, nonvolatile RAM organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitor VCCfor an out-of-tolerance condition. FEATURES 10 ye

Dallas

16k Nonvolatile SRAM

DESCRIPTION The DS1220Y 16k Nonvolatile SRAM is a 16,384-bit, fully static, nonvolatile RAM organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitor VCCfor an out-of-tolerance condition. FEATURES 10 ye

Dallas

16k Nonvolatile SRAM

DESCRIPTION The DS1220Y 16k Nonvolatile SRAM is a 16,384-bit, fully static, nonvolatile RAM organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitor VCCfor an out-of-tolerance condition. FEATURES 10 ye

Dallas

16k Nonvolatile SRAM

DESCRIPTION The DS1220Y 16k Nonvolatile SRAM is a 16,384-bit, fully static, nonvolatile RAM organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitor VCCfor an out-of-tolerance condition. FEATURES 10 ye

Dallas

Nonvolatile Controller x 4 Chip

DESCRIPTION The DS1221 Nonvolatile Controller x 4 Chip is a CMOS circuit which solves the application problem of converting CMOS RAMs into nonvolatile memories. Incoming power is monitored for an out-of tolerance condition. When such a condition is detected, the chip enable outputs are inhibite

Dallas

BankSwitch Chip

DESCRIPTION The DS1222 BankSwitch Chip is a CMOS circuit designed to select one of 16 memory banks under software control. Memory bank switching allows for an increase in memory capacity without additional address lines. Continuous blocks of memory are enabled by selecting proper memory bank thro

Dallas

64K Nonvolatile SRAM

DESCRIPTION The DS1225Y 64k Nonvolatile SRAM is a 65,536-bit, fully static, nonvolatile RAM organized as 8192 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCCfor an out-of-tolerance condition. When such a condition occu

Dallas

64K Nonvolatile SRAM

DESCRIPTION The DS1225Y 64k Nonvolatile SRAM is a 65,536-bit, fully static, nonvolatile RAM organized as 8192 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCCfor an out-of-tolerance condition. When such a condition occu

Dallas

64K Nonvolatile SRAM

DESCRIPTION The DS1225Y 64k Nonvolatile SRAM is a 65,536-bit, fully static, nonvolatile RAM organized as 8192 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCCfor an out-of-tolerance condition. When such a condition occu

Dallas

64K Nonvolatile SRAM

DESCRIPTION The DS1225Y 64k Nonvolatile SRAM is a 65,536-bit, fully static, nonvolatile RAM organized as 8192 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCCfor an out-of-tolerance condition. When such a condition occu

Dallas

64K Nonvolatile SRAM

DESCRIPTION The DS1225Y 64k Nonvolatile SRAM is a 65,536-bit, fully static, nonvolatile RAM organized as 8192 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCCfor an out-of-tolerance condition. When such a condition occu

Dallas

64K Nonvolatile SRAM

DESCRIPTION The DS1225Y 64k Nonvolatile SRAM is a 65,536-bit, fully static, nonvolatile RAM organized as 8192 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCCfor an out-of-tolerance condition. When such a condition occu

Dallas

KickStarter Chip

DESCRIPTION The DS1227 Kickstarter is a unique CMOS circuit which combines power conversion and microenergy management functions for battery operated systems. Using its integral DC-DC converter, the DS1227 supplies +5V on demand from either a 3– or 6–volt battery input. FEATURES • Provides ste

Dallas

KickStarter Chip

DESCRIPTION The DS1227 Kickstarter is a unique CMOS circuit which combines power conversion and microenergy management functions for battery operated systems. Using its integral DC-DC converter, the DS1227 supplies +5V on demand from either a 3– or 6–volt battery input. FEATURES • Provides ste

Dallas

5V Powered Dual RS-232 Transmitter/Receiver

DESCRIPTION The DS1228 is a dual RS-232-C Receiver/Transmitter that meets all EIA specifications while operating from a single, +5 volt supply. The DS1228 has two internal charge pumps. One of the charge pumps is used to generate +10 volts. The other is used to generate -10 volts. The DS1228 al

Dallas

Platon Metal Tube VA Gas or Liquid

文件:509.1 Kbytes Page:5 Pages

TTELEC

石英晶体谐振器

HLJT

惠伦晶体

16k非易失SRAM

AD

亚德诺

16k Nonvolatile SRAM

文件:207.34 Kbytes Page:8 Pages

Dallas

16k Nonvolatile SRAM

文件:201.36 Kbytes Page:8 Pages

Maxim

美信

16k Nonvolatile SRAM

文件:207.34 Kbytes Page:8 Pages

Dallas

16k Nonvolatile SRAM

文件:201.36 Kbytes Page:8 Pages

Maxim

美信

16k Nonvolatile SRAM

文件:201.36 Kbytes Page:8 Pages

Maxim

美信

封装/外壳:24-DIP 模块(0.600",15.24mm) 包装:托盘 描述:IC NVSRAM 16KBIT PARALLEL 24EDIP 集成电路(IC) 存储器

AD

亚德诺

封装/外壳:24-DIP 模块(0.600",15.24mm) 包装:管件 描述:IC NVSRAM 16KBIT PARALLEL 24EDIP 集成电路(IC) 存储器

AD

亚德诺

16k Nonvolatile SRAM

文件:201.36 Kbytes Page:8 Pages

Maxim

美信

16K Nonvolatile SRAM

文件:258.54 Kbytes Page:7 Pages

ARTSCHIP

16k Nonvolatile SRAM

文件:201.36 Kbytes Page:8 Pages

Maxim

美信

16K Nonvolatile SRAM

文件:258.54 Kbytes Page:7 Pages

ARTSCHIP

16K Nonvolatile SRAM

文件:258.54 Kbytes Page:7 Pages

ARTSCHIP

64k Nonvolatile SRAM

文件:147.62 Kbytes Page:10 Pages

Dallas

64k Nonvolatile SRAM

文件:147.62 Kbytes Page:10 Pages

Dallas

64k Nonvolatile SRAM

文件:147.62 Kbytes Page:10 Pages

Dallas

64k Nonvolatile SRAM

文件:147.62 Kbytes Page:10 Pages

Dallas

16K Nonvolatile SRAM

文件:258.54 Kbytes Page:7 Pages

ARTSCHIP

64k Nonvolatile SRAM

文件:147.62 Kbytes Page:10 Pages

Dallas

64k Nonvolatile SRAM

文件:147.62 Kbytes Page:10 Pages

Dallas

16k Nonvolatile SRAM

文件:201.36 Kbytes Page:8 Pages

Maxim

美信

16k非易失SRAM

AD

亚德诺

DS122产品属性

  • 类型

    描述

  • 型号

    DS122

  • 制造商

    Miyama Electric

更新时间:2025-12-28 12:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
原厂原包
24+
原装
38560
原装进口现货,工厂客户可以放款。17377264928微信同
DALLAS
24+
DIP-24
5000
全新原装正品,现货销售
MAXIM/美信
24+
EDIP-24
6000
全新原装深圳仓库现货有单必成
Dallas
NEW
24-DIP
6672
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
DALLAS
23+
NA
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
24+
N/A
60000
一级代理-主营优势-实惠价格-不悔选择
DALLAS
23+
DIP
12800
##公司主营品牌长期供应100%原装现货可含税提供技术
Maxim
25+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
DALLAS
24+
57076
Maxim
25+
电联咨询
7800
公司现货,提供拆样技术支持

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