DS122价格

参考价格:¥56.2202

型号:DS1220AB-100+ 品牌:Maxim 备注:这里有DS122多少钱,2026年最近7天走势,今日出价,今日竞价,DS122批发/采购报价,DS122行情走势销售排行榜,DS122报价。
型号 功能描述 生产厂家 企业 LOGO 操作

16k Nonvolatile SRAM

DESCRIPTION The DS1220AB and DS1220AD 16k Nonvolatile SRAMs are 16,384-bit, fully static, nonvolatile SRAMs organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a

DALLAS

16k Nonvolatile SRAM

DESCRIPTION The DS1220AB and DS1220AD 16k Nonvolatile SRAMs are 16,384-bit, fully static, nonvolatile SRAMs organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a

DALLAS

16k Nonvolatile SRAM

DESCRIPTION The DS1220Y 16k Nonvolatile SRAM is a 16,384-bit, fully static, nonvolatile RAM organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitor VCCfor an out-of-tolerance condition. FEATURES 10 ye

DALLAS

16k Nonvolatile SRAM

DESCRIPTION The DS1220AB and DS1220AD 16k Nonvolatile SRAMs are 16,384-bit, fully static, nonvolatile SRAMs organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a

DALLAS

16k Nonvolatile SRAM

DESCRIPTION The DS1220Y 16k Nonvolatile SRAM is a 16,384-bit, fully static, nonvolatile RAM organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitor VCCfor an out-of-tolerance condition. FEATURES 10 ye

DALLAS

16k Nonvolatile SRAM

DESCRIPTION The DS1220AB and DS1220AD 16k Nonvolatile SRAMs are 16,384-bit, fully static, nonvolatile SRAMs organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a

DALLAS

16k Nonvolatile SRAM

DESCRIPTION The DS1220Y 16k Nonvolatile SRAM is a 16,384-bit, fully static, nonvolatile RAM organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitor VCCfor an out-of-tolerance condition. FEATURES 10 ye

DALLAS

16k Nonvolatile SRAM

DESCRIPTION The DS1220AB and DS1220AD 16k Nonvolatile SRAMs are 16,384-bit, fully static, nonvolatile SRAMs organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a

DALLAS

16k Nonvolatile SRAM

DESCRIPTION The DS1220Y 16k Nonvolatile SRAM is a 16,384-bit, fully static, nonvolatile RAM organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitor VCCfor an out-of-tolerance condition. FEATURES 10 ye

DALLAS

16k Nonvolatile SRAM

DESCRIPTION The DS1220AB and DS1220AD 16k Nonvolatile SRAMs are 16,384-bit, fully static, nonvolatile SRAMs organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a

DALLAS

16k Nonvolatile SRAM

DESCRIPTION The DS1220AB and DS1220AD 16k Nonvolatile SRAMs are 16,384-bit, fully static, nonvolatile SRAMs organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a

DALLAS

16k Nonvolatile SRAM

DESCRIPTION The DS1220AB and DS1220AD 16k Nonvolatile SRAMs are 16,384-bit, fully static, nonvolatile SRAMs organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a

MAXIM

美信

16k Nonvolatile SRAM

DESCRIPTION The DS1220Y 16k Nonvolatile SRAM is a 16,384-bit, fully static, nonvolatile RAM organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitor VCCfor an out-of-tolerance condition. FEATURES 10 ye

DALLAS

16k Nonvolatile SRAM

DESCRIPTION The DS1220AB and DS1220AD 16k Nonvolatile SRAMs are 16,384-bit, fully static, nonvolatile SRAMs organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a

DALLAS

16k Nonvolatile SRAM

DESCRIPTION The DS1220Y 16k Nonvolatile SRAM is a 16,384-bit, fully static, nonvolatile RAM organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitor VCCfor an out-of-tolerance condition. FEATURES 10 ye

DALLAS

16k Nonvolatile SRAM

DESCRIPTION The DS1220AB and DS1220AD 16k Nonvolatile SRAMs are 16,384-bit, fully static, nonvolatile SRAMs organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a

DALLAS

16k Nonvolatile SRAM

DESCRIPTION The DS1220AB and DS1220AD 16k Nonvolatile SRAMs are 16,384-bit, fully static, nonvolatile SRAMs organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a

DALLAS

16k Nonvolatile SRAM

DESCRIPTION The DS1220Y 16k Nonvolatile SRAM is a 16,384-bit, fully static, nonvolatile RAM organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitor VCCfor an out-of-tolerance condition. FEATURES 10 ye

DALLAS

16k Nonvolatile SRAM

DESCRIPTION The DS1220AB and DS1220AD 16k Nonvolatile SRAMs are 16,384-bit, fully static, nonvolatile SRAMs organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a

DALLAS

16k Nonvolatile SRAM

DESCRIPTION The DS1220Y 16k Nonvolatile SRAM is a 16,384-bit, fully static, nonvolatile RAM organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitor VCCfor an out-of-tolerance condition. FEATURES 10 ye

DALLAS

16k Nonvolatile SRAM

DESCRIPTION The DS1220Y 16k Nonvolatile SRAM is a 16,384-bit, fully static, nonvolatile RAM organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitor VCCfor an out-of-tolerance condition. FEATURES 10 ye

DALLAS

16k Nonvolatile SRAM

DESCRIPTION The DS1220Y 16k Nonvolatile SRAM is a 16,384-bit, fully static, nonvolatile RAM organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitor VCCfor an out-of-tolerance condition. FEATURES 10 ye

DALLAS

16k Nonvolatile SRAM

DESCRIPTION The DS1220Y 16k Nonvolatile SRAM is a 16,384-bit, fully static, nonvolatile RAM organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitor VCCfor an out-of-tolerance condition. FEATURES 10 ye

DALLAS

16k Nonvolatile SRAM

DESCRIPTION The DS1220Y 16k Nonvolatile SRAM is a 16,384-bit, fully static, nonvolatile RAM organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitor VCCfor an out-of-tolerance condition. FEATURES 10 ye

DALLAS

16k Nonvolatile SRAM

DESCRIPTION The DS1220Y 16k Nonvolatile SRAM is a 16,384-bit, fully static, nonvolatile RAM organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitor VCCfor an out-of-tolerance condition. FEATURES 10 ye

DALLAS

Nonvolatile Controller x 4 Chip

DESCRIPTION The DS1221 Nonvolatile Controller x 4 Chip is a CMOS circuit which solves the application problem of converting CMOS RAMs into nonvolatile memories. Incoming power is monitored for an out-of tolerance condition. When such a condition is detected, the chip enable outputs are inhibite

DALLAS

BankSwitch Chip

DESCRIPTION The DS1222 BankSwitch Chip is a CMOS circuit designed to select one of 16 memory banks under software control. Memory bank switching allows for an increase in memory capacity without additional address lines. Continuous blocks of memory are enabled by selecting proper memory bank thro

DALLAS

64K Nonvolatile SRAM

DESCRIPTION The DS1225Y 64k Nonvolatile SRAM is a 65,536-bit, fully static, nonvolatile RAM organized as 8192 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCCfor an out-of-tolerance condition. When such a condition occu

DALLAS

64K Nonvolatile SRAM

DESCRIPTION The DS1225Y 64k Nonvolatile SRAM is a 65,536-bit, fully static, nonvolatile RAM organized as 8192 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCCfor an out-of-tolerance condition. When such a condition occu

DALLAS

64K Nonvolatile SRAM

DESCRIPTION The DS1225Y 64k Nonvolatile SRAM is a 65,536-bit, fully static, nonvolatile RAM organized as 8192 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCCfor an out-of-tolerance condition. When such a condition occu

DALLAS

64K Nonvolatile SRAM

DESCRIPTION The DS1225Y 64k Nonvolatile SRAM is a 65,536-bit, fully static, nonvolatile RAM organized as 8192 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCCfor an out-of-tolerance condition. When such a condition occu

DALLAS

64K Nonvolatile SRAM

DESCRIPTION The DS1225Y 64k Nonvolatile SRAM is a 65,536-bit, fully static, nonvolatile RAM organized as 8192 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCCfor an out-of-tolerance condition. When such a condition occu

DALLAS

64K Nonvolatile SRAM

DESCRIPTION The DS1225Y 64k Nonvolatile SRAM is a 65,536-bit, fully static, nonvolatile RAM organized as 8192 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCCfor an out-of-tolerance condition. When such a condition occu

DALLAS

KickStarter Chip

DESCRIPTION The DS1227 Kickstarter is a unique CMOS circuit which combines power conversion and microenergy management functions for battery operated systems. Using its integral DC-DC converter, the DS1227 supplies +5V on demand from either a 3– or 6–volt battery input. FEATURES • Provides ste

DALLAS

KickStarter Chip

DESCRIPTION The DS1227 Kickstarter is a unique CMOS circuit which combines power conversion and microenergy management functions for battery operated systems. Using its integral DC-DC converter, the DS1227 supplies +5V on demand from either a 3– or 6–volt battery input. FEATURES • Provides ste

DALLAS

5V Powered Dual RS-232 Transmitter/Receiver

DESCRIPTION The DS1228 is a dual RS-232-C Receiver/Transmitter that meets all EIA specifications while operating from a single, +5 volt supply. The DS1228 has two internal charge pumps. One of the charge pumps is used to generate +10 volts. The other is used to generate -10 volts. The DS1228 al

DALLAS

Platon Metal Tube VA Gas or Liquid

文件:509.1 Kbytes Page:5 Pages

TTELEC

石英晶体谐振器

HLJT

惠伦晶体

16k非易失SRAM

AD

亚德诺

16k Nonvolatile SRAM

文件:201.36 Kbytes Page:8 Pages

MAXIM

美信

16k Nonvolatile SRAM

文件:207.34 Kbytes Page:8 Pages

DALLAS

16k Nonvolatile SRAM

文件:207.34 Kbytes Page:8 Pages

DALLAS

16k Nonvolatile SRAM

文件:201.36 Kbytes Page:8 Pages

MAXIM

美信

16k Nonvolatile SRAM

文件:201.36 Kbytes Page:8 Pages

MAXIM

美信

封装/外壳:24-DIP 模块(0.600",15.24mm) 包装:托盘 描述:IC NVSRAM 16KBIT PARALLEL 24EDIP 集成电路(IC) 存储器

AD

亚德诺

封装/外壳:24-DIP 模块(0.600",15.24mm) 包装:管件 描述:IC NVSRAM 16KBIT PARALLEL 24EDIP 集成电路(IC) 存储器

AD

亚德诺

16k Nonvolatile SRAM

文件:201.36 Kbytes Page:8 Pages

MAXIM

美信

16K Nonvolatile SRAM

文件:258.54 Kbytes Page:7 Pages

ARTSCHIP

16k Nonvolatile SRAM

文件:201.36 Kbytes Page:8 Pages

MAXIM

美信

16K Nonvolatile SRAM

文件:258.54 Kbytes Page:7 Pages

ARTSCHIP

16K Nonvolatile SRAM

文件:258.54 Kbytes Page:7 Pages

ARTSCHIP

64k Nonvolatile SRAM

文件:147.62 Kbytes Page:10 Pages

DALLAS

64k Nonvolatile SRAM

文件:147.62 Kbytes Page:10 Pages

DALLAS

64k Nonvolatile SRAM

文件:147.62 Kbytes Page:10 Pages

DALLAS

64k Nonvolatile SRAM

文件:147.62 Kbytes Page:10 Pages

DALLAS

16K Nonvolatile SRAM

文件:258.54 Kbytes Page:7 Pages

ARTSCHIP

64k Nonvolatile SRAM

文件:147.62 Kbytes Page:10 Pages

DALLAS

64k Nonvolatile SRAM

文件:147.62 Kbytes Page:10 Pages

DALLAS

16k Nonvolatile SRAM

文件:207.34 Kbytes Page:8 Pages

DALLAS

16k Nonvolatile SRAM

文件:201.36 Kbytes Page:8 Pages

MAXIM

美信

DS122产品属性

  • 类型

    描述

  • 型号

    DS122

  • 制造商

    Miyama Electric

更新时间:2026-3-2 8:48:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
DALLAS
25+
DIP24
6500
十七年专营原装现货一手货源,样品免费送
dallas
24+
N/A
6980
原装现货,可开13%税票
DALLAS
22+
DIP
8000
原装正品支持实单
DALLAS
17+
DIP
6200
100%原装正品现货
DALLAS
21+
DIP24
1638
只做原装正品,不止网上数量,欢迎电话微信查询!
DALLAS/MAXIM
25+
DIP24
18600
百分百原装正品 真实公司现货库存 本公司只做原装 可
DALLAS
23+
DIP
8560
受权代理!全新原装现货特价热卖!
DALLAS
24+
DIP
1068
原装现货假一罚十
DALLAS
2026+
na
294
原装正品,假一罚十!
DALLAS
2025+
DIP24
3500
原装进口价格优 请找坤融电子!

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