位置：首页 > IC中文资料第1196页 > DS1220Y
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
DS1220Y | 16k Nonvolatile SRAM DESCRIPTION The DS1220Y 16k Nonvolatile SRAM is a 16,384-bit, fully static, nonvolatile RAM organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitor VCCfor an out-of-tolerance condition. FEATURES 10 ye | Dallas |   | |
DS1220Y | 16K Nonvolatile SRAM 文件：258.54 Kbytes Page：7 Pages | ARTSCHIP | | |
DS1220Y | 16k Nonvolatile SRAM 文件：207.33 Kbytes Page：9 Pages | Maxim 美信 | | |
DS1220Y | 16K非易失SRAM | AD 亚德诺 | | |
16k Nonvolatile SRAM DESCRIPTION The DS1220Y 16k Nonvolatile SRAM is a 16,384-bit, fully static, nonvolatile RAM organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitor VCCfor an out-of-tolerance condition. FEATURES 10 ye | Dallas | | ||
16k Nonvolatile SRAM DESCRIPTION The DS1220Y 16k Nonvolatile SRAM is a 16,384-bit, fully static, nonvolatile RAM organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitor VCCfor an out-of-tolerance condition. FEATURES 10 ye | Dallas | | ||
16k Nonvolatile SRAM DESCRIPTION The DS1220Y 16k Nonvolatile SRAM is a 16,384-bit, fully static, nonvolatile RAM organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitor VCCfor an out-of-tolerance condition. FEATURES 10 ye | Dallas | | ||
16k Nonvolatile SRAM DESCRIPTION The DS1220Y 16k Nonvolatile SRAM is a 16,384-bit, fully static, nonvolatile RAM organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitor VCCfor an out-of-tolerance condition. FEATURES 10 ye | Dallas | | ||
16k Nonvolatile SRAM 文件：207.33 Kbytes Page：9 Pages | Maxim 美信 | | ||
16k Nonvolatile SRAM 文件：207.33 Kbytes Page：9 Pages | Maxim 美信 | | ||
封装/外壳：24-DIP 模块（0.600"，15.24mm） 包装：卷带（TR） 描述：IC NVSRAM 16KBIT PARALLEL 24EDIP 集成电路（IC） 存储器 | AD 亚德诺 | | ||
封装/外壳：24-DIP 模块（0.600"，15.24mm） 包装：散装 描述：IC NVSRAM 16KBIT PARALLEL 24EDIP 集成电路（IC） 存储器 | AD 亚德诺 | | ||
1220 TPMOV Surge Protective Device Features * Complies with UL 1449 and IEC/EN 61643-11 standards * UL recognized Type 4,Type 2 location SPD, passed short circuit current rating (SCCR) @ 200 kA * High reliability protected MOV with Advanced Thermal Disconnector (TD+) * Compact size to save installation space * PCB mount design | Bourns 伯恩斯 | | ||
BUILT-IN SERVO DRIVE INTEGRATED MOTOR-Brushless 文件：1.21069 Mbytes Page：1 Pages | ASSUN | | ||
Original Strain Relief Bushings 文件：129.02 Kbytes Page：1 Pages | Heyco | | ||
AGILENT 1220 INFINITY II HPLC SYSTEM FOR CANNABINOID POTENCY TESTING 文件：736.79 Kbytes Page：2 Pages | HP 安捷伦 | | ||
Gage, Absolute, and Differential 文件：173.32 Kbytes Page：5 Pages | TEC 泰科电子 | |
DS1220Y产品属性
- 类型
描述
- 型号
DS1220Y
- 制造商
Maxim Integrated Products
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
DALLSA |
23+ |
NA |
20000 |
全新原装假一赔十 |
|||
DALLAS |
25+ |
na |
294 |
原装正品,假一罚十! |
|||
DALLAS |
0810+ |
DIP |
233 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
DALLAS |
2430+ |
DIP24 |
8540 |
只做原装正品假一赔十为客户做到零风险!! |
|||
DALLAS |
21+ |
DIP24 |
1638 |
只做原装正品,不止网上数量,欢迎电话微信查询! |
|||
Dallas |
25+ |
1 |
公司优势库存 热卖中!! |
||||
DALLAS |
23+24 |
DIP- |
9680 |
原盒原标.进口原装.支持实单 .价格优势 |
|||
DALLAS |
23+ |
26931 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
||||
DALLAS |
24+ |
DIP-24 |
15050 |
原装正品现货热卖 |
|||
DALLAS |
25+ |
DIP-18 |
18000 |
原厂直接发货进口原装 |
DS1220Y规格书下载地址
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2012-12-3
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