型号 功能描述 生产厂家 企业 LOGO 操作
DS1220Y

16k Nonvolatile SRAM

DESCRIPTION The DS1220Y 16k Nonvolatile SRAM is a 16,384-bit, fully static, nonvolatile RAM organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitor VCCfor an out-of-tolerance condition. FEATURES 10 ye

Dallas

DS1220Y

16K Nonvolatile SRAM

文件:258.54 Kbytes Page:7 Pages

ARTSCHIP

DS1220Y

16k Nonvolatile SRAM

文件:207.33 Kbytes Page:9 Pages

Maxim

美信

DS1220Y

16K非易失SRAM

AD

亚德诺

16k Nonvolatile SRAM

DESCRIPTION The DS1220Y 16k Nonvolatile SRAM is a 16,384-bit, fully static, nonvolatile RAM organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitor VCCfor an out-of-tolerance condition. FEATURES 10 ye

Dallas

16k Nonvolatile SRAM

DESCRIPTION The DS1220Y 16k Nonvolatile SRAM is a 16,384-bit, fully static, nonvolatile RAM organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitor VCCfor an out-of-tolerance condition. FEATURES 10 ye

Dallas

16k Nonvolatile SRAM

DESCRIPTION The DS1220Y 16k Nonvolatile SRAM is a 16,384-bit, fully static, nonvolatile RAM organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitor VCCfor an out-of-tolerance condition. FEATURES 10 ye

Dallas

16k Nonvolatile SRAM

DESCRIPTION The DS1220Y 16k Nonvolatile SRAM is a 16,384-bit, fully static, nonvolatile RAM organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitor VCCfor an out-of-tolerance condition. FEATURES 10 ye

Dallas

16k Nonvolatile SRAM

文件:207.33 Kbytes Page:9 Pages

Maxim

美信

16k Nonvolatile SRAM

文件:207.33 Kbytes Page:9 Pages

Maxim

美信

封装/外壳:24-DIP 模块(0.600",15.24mm) 包装:卷带(TR) 描述:IC NVSRAM 16KBIT PARALLEL 24EDIP 集成电路(IC) 存储器

AD

亚德诺

封装/外壳:24-DIP 模块(0.600",15.24mm) 包装:散装 描述:IC NVSRAM 16KBIT PARALLEL 24EDIP 集成电路(IC) 存储器

AD

亚德诺

1220 TPMOV Surge Protective Device

Features * Complies with UL 1449 and IEC/EN 61643-11 standards * UL recognized Type 4,Type 2 location SPD, passed short circuit current rating (SCCR) @ 200 kA * High reliability protected MOV with Advanced Thermal Disconnector (TD+) * Compact size to save installation space * PCB mount design

Bourns

伯恩斯

Gage, Absolute, and Differential

文件:173.32 Kbytes Page:5 Pages

TEC

泰科电子

Original Strain Relief Bushings

文件:129.02 Kbytes Page:1 Pages

Heyco

AGILENT 1220 INFINITY II HPLC SYSTEM FOR CANNABINOID POTENCY TESTING

文件:736.79 Kbytes Page:2 Pages

HP

安捷伦

BUILT-IN SERVO DRIVE INTEGRATED MOTOR-Brushless

文件:1.21069 Mbytes Page:1 Pages

ASSUN

DS1220Y产品属性

  • 类型

    描述

  • 型号

    DS1220Y

  • 制造商

    Maxim Integrated Products

更新时间:2025-12-28 23:37:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
DALLAS
24+
DIP-24
15050
原装正品现货热卖
DALLAS
25+
na
294
原装正品,假一罚十!
DALLAS
2430+
DIP24
8540
只做原装正品假一赔十为客户做到零风险!!
DALLAS
22+
DIP
8000
原装正品支持实单
DALLAS
2025+
DIP24
3500
原装进口价格优 请找坤融电子!
DALLAS
24+
388
Dallas
25+
1
公司优势库存 热卖中!!
DALLAS
17+
DIP
6200
100%原装正品现货
DALLAS
23+
DIP
5000
原装正品,假一罚十
DALLAS
05+
100
原装正品

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