位置:DS1225Y-150-IND > DS1225Y-150-IND详情

DS1225Y-150-IND中文资料

厂家型号

DS1225Y-150-IND

文件大小

80.83Kbytes

页面数量

8

功能描述

64K Nonvolatile SRAM

数据手册

下载地址一下载地址二到原厂下载

生产厂商

DALLAS

DS1225Y-150-IND数据手册规格书PDF详情

DESCRIPTION

The DS1225Y 64k Nonvolatile SRAM is a 65,536-bit, fully static, nonvolatile RAM organized as 8192 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCCfor an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and writeprotection is unconditionally enabled to prevent data corruption. The NV SRAM can be used in place of existing 8k x 8 SRAMs directly conforming to the popular bytewide 28-pin DIP standard.

FEATURES

10 years minimum data retention in the absence of external power

Data is automatically protected during power loss

Directly replaces 2k x 8 volatile static RAM or EEPROM

Unlimited write cycles

Low-power CMOS

JEDEC standard 28-pin DIP package

Read and write access times as fast as 150 ns

Full ±10 operating range

Optional industrial temperature range of

-40°C to +85°C, designated IND

DS1225Y-150-IND产品属性

  • 类型

    描述

  • 型号

    DS1225Y-150-IND

  • 制造商

    DALLAS

  • 制造商全称

    Dallas Semiconductor

  • 功能描述

    64K Nonvolatile SRAM

更新时间:2026-2-27 16:08:00
供应商 型号 品牌 批号 封装 库存 备注 价格
DALLAS
05+
PSDIP
12
全新原装 绝对有货
DALLAS
25+
PSDIP
2987
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DALLAS
24+
DIP
19500
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DALLAS
25+23+
BGA
20291
绝对原装正品全新进口深圳现货
DALLAS
25+
DIP
30000
代理全新原装现货,价格优势
DALLAS
1210+
DIP28
9
原装/现货
DALLAS
23+
DIP
12800
##公司主营品牌长期供应100%原装现货可含税提供技术
DALLAS
2023+
3000
进口原装现货
DALLAS
2026+
DIP
120
原装正品,假一罚十!
DALLAS
25+
DIP
120
原装正品,假一罚十!